Non-adiabatic dissociation dynamics of Ar⋯I2 (E, v) intermolecular vibrational levels probed using velocity-map imaging.

Ion time-of-flight velocity-map imaging was used to measure the kinetic-energy distributions of the I2 ion-pair fragments formed after photoexcitation of Ar⋯I2 complexes to intermolecular vibrational levels bound within the Ar + I2 (E, vE = 0-2) potential energy surfaces. The kinetic-energy distributions of the I2 products indicate that complexes in the Ar⋯I2 (E, vE) levels preferentially dissociate into I2 in the D and ß ion-pair states with no change in I2 vibrational excitation. The energetics of the levels prepared suggest that there is a non-adiabatic coupling of the initially prepared levels with the continuum of states lying above the Ar + I2 (D, vD = vE) and Ar + I2 (ß, vß = vE) dissociation limits. The angular anisotropies of the I2 product signals collected for many of the Ar⋯I2 (E, vE) levels have maxima parallel to the laser polarization axis. This contradicts expectations for the prompt dissociation of complexes with T-shaped geometries, which would result in images with maxima perpendicular to the polarization axis. These anisotropies suggest that there is a perturbation of the transition moment in these clusters or there are additional intermolecular interactions, likely those sampled while traversing above the attractive wells of the lower-energy potentials during dissociation. I2 (D', vD') products are also identified when preparing several of the low-lying levels localized in the T-shaped well of the Ar + I2 (E, vE = 0-2) potentials, and they are formed in multiple νD' vibrational levels spanning energy ranges up to 500 cm-1.

Probing the Dependence of Long-Range, Four-Atom Interactions on Intermolecular Orientation. 4. The Dissociation Dynamics of H2/D2···ICl(B,v'=3) and the Observation of Efficient Vibrational-Rotational Energy Transfer.

The vibrational predissociation dynamics of H2/D2···I35Cl(B,v'=3) complexes containing both para- and ortho-hydrogen prepared in different intermolecular vibrational levels were investigated. The Δv = -1 I35Cl(B,v = 2,j) rotational product-state distributions measured for excitation to the lowest-energy T-shaped levels of these complexes are mostly bimodal. The rotational distributions measured for excitation of the H2···I35Cl(B,v'=3) complexes are colder than those of the D2···I35Cl(B,v'=3) complexes, and there are only slight differences between those measured for the para- and ortho-hydrogen containing complexes. Excitation of the delocalized bending levels results in slightly colder rotational product-state distributions. The distributions suggest the dynamics result from more than impulsive dissociation off of the inner repulsive wall of the lower-energy H2/D2 + I35Cl(B,v = 2) potential surfaces of the products. The depths of these potentials and the energies available to these products also contribute to the dynamics. The formation of the Δv = -2, I35Cl(B,v = 1) product channel was only identified for excitation of levels within the ortho(j = 0)-D2 + I35Cl(B,v'=3) potential. The formation of this channel occurs via I35Cl(B,v'=3) vibrational to D2 rotational energy transfer forming the ortho(j = 2)-D2 + I35Cl(B,v = 1,j) products.

Bound-Ion Pair X-Type Ligation of Cadmium and Zinc Dithiocarbamates on Cadmium Selenide Quantum Belts.

Wurtzite CdSe quantum belts with L-type n-octylamine, L-type ammonia, or Z-type Cd(oleate)2 ligands are exchanged for several metal-dithiocarbamate ligands [M(S2CNR1R2)2]: Cd(S2CNPhMe)2, Cd(S2CNEt2)2, Zn(S2CNPhMe)2, and Zn(S2CNEt2)2. Successful ligand exchange with all M(S2CNR1R2)2 compounds occurs from {CdSe[Cd(oleate)2]0.19} quantum belts (QBs), which induce similar spectral shifts in the absorption spectra of the ligand-exchanged QBs. Spectroscopic data, experimentally determined lattice strains, and ligand exchanges with [Na][Et2NCS2] and [NH4][MePhNCS2] establish that the [M(S2CNR1R2)2] ligands bind as bound-ion-paired X-type ligands with (S2CNR1R2)- groups ligated directly to the QB surfaces and [M(S2CNR1R2)]+ groups serving as the charge-balancing ion-paired countercations. The X-type dithiocarbamate ligands do not impart any special electronic effects to the CdSe QBs.

Photoinduced Electron Transfer and Changes in Surface Free Energy in Polythiophene-Polyviologen Bilayered Thin Films.

Bipyridiniums, also known as viologens, are well-documented electron acceptors that are generally easy to synthesize on a large scale and reversibly cycle between three oxidation states (V2+, V•+, and V0). Accordingly, they have been explored in a number of applications that capitalize on their dynamic redox chemistry, such as redox-flow batteries and electrochromic devices. Viologens are also particularly useful in photoinduced electron transfer (PET) processes and therefore are of interest in photovoltaic applications that typically rely on electron-rich donors like polythiophene (PTh). However, the PET mechanism and relaxation dynamics between interfacing PTh and viologen-based thin films has not been well studied as a function of thickness of the acceptor layer. Here, a novel, bilayered thin film composite was fabricated by first spin-coating PTh onto glass slides, followed by spin-coating and curing polyviologen (PV)-based micron-sized films of variable thicknesses (0.5-11.3 µm) on top of the PTh layer. The electron-transfer mechanism and relaxation dynamics from the PTh sublayer into the upper PV film were investigated using femtosecond transient absorption (fTA) spectroscopy and electrochemistry to better understand how the charge-transfer/relaxation lifetimes could be extended using thicker PV acceptor films. The fTA experiments were performed under inert N2 conditions as well as in ambient O2. The latter shortened the lifetimes of the electrons in the PV layer, presumably due to O2 triplet-based trap sites. Contact angle measurements using H2O and MeI were also performed on top of the bilayered films to measure changes in surface free energy that would aid the assessment related to efficiency of the combined processes involving light penetration, photoexcitation, electron mobility, and relaxation from within the bilayered thin films. Insights gained from this work will support the development of future devices that employ viologen-based materials as an alternative electron-acceptor that is both easily processable and scalable.

Vibrational predissociation versus intramolecular vibrational energy redistribution (IVR) in rare gas⋯dihalogen complexes: IVR identified in Ar⋯I2(B, ν') using velocity-map imaging.

The competition between multiple pathways sampled during the energetic relaxation of excited molecules can be difficult to experimentally decipher. The rare gas···dihalogen van der Waals complexes have remained key systems for exploring the competition between relaxation pathways, such as intramolecular vibrational energy redistribution (IVR) and vibrational predissociation (VP). As these mechanisms can yield the same products, the relaxation pathways traversed are often deduced from the excitation spectra or product-state distributions. In addition to a brief perspective on IVR and VP in rare gas⋯dihalogen complexes, we present new results obtained using time-of-flight velocity-map imaging (VMI) on T-shaped Ar⋯I2(B, ν', n' = 0) complexes that illustrate how contributions from these two pathways can be separated. The angular anisotropies of the ion images collected for the I2(B, ν < ν') fragments indicate the products for certain Ar⋯I2(B, ν', n' = 0) levels are weighted along the direction perpendicular to the laser-polarization axis. These distributions are consistent with prompt dissociation of the T-shaped excited-state complexes, likely via direct VP. The distributions measured for other Ar⋯I2(B, ν', n' = 0) levels are preferentially along the laser-polarization axis. These initially prepared levels must undergo IVR with nearly resonant Ar⋯I2(B, ν < ν', n > 0) intermolecular vibrational levels that sample linear Ar-I-I orientations during dissociation.

Intraband Relaxation Dynamics of Charge Carriers within CdTe Quantum Wires.

The state-to-state intraband relaxation dynamics of charge carriers photogenerated within CdTe quantum wires (QWs) are characterized via transient absorption spectroscopy. Overlapping signals from the energetic-shifting of the quantum-confinement features and the occupancy of carriers in the states associated with these features are separated using the quantum-state renormalization model. Holes generated with an excitation energy of 2.75 eV reach the band edge within the instrument response of the measurement, ∼200 fs. This extremely short relaxation time is consistent with the low photoluminescence quantum yield of the QWs, ∼0.2%, and the presence of alternative relaxation pathways for the holes. The electrons relax through the different energetically available quantum-confinement states, likely via phonon coupling, with an overall rate of ∼0.6 eV ps-1.

Excitation Energy Dependence of Photoluminescence Quantum Yields in Semiconductor Nanomaterials with Varying Dimensionalities.

The excitation energy dependence (EED) of the photoluminescence quantum yield (ΦPL) of semiconductor nanoparticles with varying dimensionalities is reported. Specifically, the EEDs of CdSe quantum dots, CdSe quantum platelets, CdSe quantum belts, and CdTe quantum wires were determined via measurements of individual ΦPL values and photoluminescence efficiency (PLEff(E)) spectra. There is a general trend of overall decreasing efficiency for radiative recombination with increasing excitation energy. In addition, there are often local minima in the PLEff(E) spectra that are most often at energies between quantum-confinement transitions. The average PL lifetimes of the samples do not depend on the excitation energy, suggesting that the EED of ΦPL arises from charge carrier trapping that competes efficiently with intraband carrier relaxation to the band edge. The local minima in the PLEff(E) spectra are attributed to excitation into optically coupled states that results in the loss of carriers in the semiconductor. The EED data suggest that the PLEff(E) spectra depend on the sample synthesis, preparation, surface passivation, and environment.

Electronic predissociation in rare gas-dihalogen complexes.

The role of electronic predissociation (EP) in the dissociation dynamics of rare gas⋯dihalogen complexes (Rg⋯X2) prepared in the B electronic state was probed using ion time-of-flight velocity-map imaging. Specifically, EP of complexes prepared in the T-shaped Ar⋯I2, Ne⋯I2, He⋯I2, Ar⋯Br2, Ne⋯Br2, and He⋯Br2 levels with varying amounts of X2 vibrational excitation, ν', was investigated. The atomic I(2P3/2) or Br(2P3/2) EP fragments were probed using ion time-of-flight velocity-map imaging. Definitive evidence for EP was observed only for the Ar⋯I2 complex, and it occurs for all of the T-shaped intermolecular levels investigated, those with ν' = 12-22, 24, and 25. The relative yields for EP in these levels measured as a function of ν' are consistent with previously reported yields for the competing mechanism of vibrational predissociation. The anisotropies of the I+ images collected for Ar⋯I2 indicate that EP is occurring on timescales shorter than the rotational periods of the complex. The kinetic energy distributions of the departing I-atom fragments suggest that EP occurs from an asymmetric geometry rather than the rigid T-shaped geometry for many of the Ar⋯I2 levels prepared. These findings indicate that intramolecular vibrational redistribution of these initially prepared T-shaped levels to excited levels bound within a lower-energy intermolecular potential occurs prior to EP.

Wave Function Engineering in CdSe/PbS Core/Shell Quantum Dots.

The synthesis of epitaxial CdSe/PbS core/shell quantum dots (QDs) is reported. The PbS shell grows in a rock salt structure on the zinc blende CdSe core, thereby creating a crystal structure mismatch through additive growth. Absorption and photoluminescence (PL) band edge features shift to lower energies with increasing shell thickness, but remain above the CdSe bulk band gap. Nevertheless, the profiles of the absorption spectra vary with shell growth, indicating that the overlap of the electron and hole wave functions is changing significantly. This leads to over an order of magnitude reduction of absorption near the band gap and a large, tunable energy shift, of up to 550 meV, between the onset of strong absorption and the band edge PL. While the bulk valence and conduction bands adopt an inverse type-I alignment, the observed spectroscopic behavior is consistent with a transition between quasi-type-I and quasi-type-II behavior depending on shell thickness. Three effective mass approximation models support this hypothesis and suggest that the large difference in effective masses between the core and shell results in hole localization in the CdSe core and a delocalization of the electron across the entire QD. These results show the tuning of wave functions and transition energies in CdSe/PbS nanoheterostructures with prospects for use in optoelectronic devices for luminescent solar concentration or multiexciton generation.

Cadmium Bis(phenyldithiocarbamate) as a Nanocrystal Shell-Growth Precursor.

Cadmium bis(phenyldithiocarbamate) [Cd(PTC)2] is prepared and structurally characterized. The compound crystallizes in the monoclinic space group P21/n. A one-dimensional polymeric structure is adopted in the solid state, having bridging PTC ligands and 6-coordinate pseudo-octahedral Cd atoms. The compound is soluble in DMSO, THF, and DMF and insoluble in EtOH, MeOH, CHCl3, CH2Cl2, and toluene. {CdSe[n-octylamine]0.53} quantum belts and Cd(PTC)2 react to deposit epitaxial CdS shells on the nanocrystals. With an excess of Cd(PTC)2, the resulting thick shells contain spiny CdS nodules grown in the Stranski-Krastanov mode. Stoichiometric control affords smooth, monolayer CdS shells. A base-catalyzed reaction pathway is elucidated for the conversion of Cd(PTC)2 to CdS, which includes phenylisothiocyanate and aniline as intermediates, and 1,3-diphenylthiourea as a final product.

Spectroscopic Properties of Phase-Pure and Polytypic Colloidal Semiconductor Quantum Wires.

We report ensemble extinction and photoluminesence spectra for colloidal CdTe quantum wires (QWs) with nearly phase-pure, defect-free wurtzite (WZ) structure, having spectral line widths comparable to the best ensemble or single quantum-dot values, to the single polytypic (having WZ and zinc blende (ZB) alternations) QW values, and to those of two-dimensional quantum belts or platelets. The electronic structures determined from the multifeatured extinction spectra are in excellent agreement with the theoretical results of WZ QWs having the same crystallographic orientation. Optical properties of polytypic QWs of like diameter and diameter distribution are provided for comparison, which exhibit smaller bandgaps and broader spectral line widths. The nonperiodic WZ-ZB alternations are found to generate non-negligible shifts of the bandgap to intermediate energies between the quantum-confined WZ and ZB energies. The alternations and variations in the domain sizes result in inhomogeneous spectral line width broadening that may be more significant than that arising from the 12-13% diameter distributions within the QW ensembles.

Influence of the Nanoscale Kirkendall Effect on the Morphology of Copper Indium Disulfide Nanoplatelets Synthesized by Ion Exchange.

CuInS2 nanocrystals are prepared by ion exchange with template Cu2-xS nanoplatelets and InX3 [X = chloride, iodide, acetate (OAc), or acetylacetonate (acac)]. The morphologies of the resultant nanocrystals depend on the InX3 precursor and the reaction temperature. Exchange with InCl3 at 150 °C produces CuInS2 nanoplatelets having central holes and thickness variations, whereas the exchange at 200 °C produces intact CuInS2 nanoplatelets in which the initial morphology is preserved. Exchange with InI3 at 150 °C produces CuInS2 nanoplatelets in which the central hollowing is more extreme, whereas exchange with In(OAc)3 or In(acac)3 at 150 °C produces intact CuInS2 nanoplatelets. The results establish that the ion exchange occurs through the thin nanoplatelet edge facets. The hollowing and hole formation are due to a nanoscale Kirkendall Effect operating in the reaction-limited regime for displacement of X(-) at the edges, to allow insertion of In(3+) into the template nanoplatelets.

Two-dimensional semiconductor nanocrystals: properties, templated formation, and magic-size nanocluster intermediates.

CONSPECTUS: Semiconductor nanocrystals having an extended length dimension and capable of efficiently transporting energy and charge would have useful applications in solar-energy conversion and other emerging technologies. Pseudocylindrical semiconductor nanowires and quantum wires are available that could potentially serve in this role. Sadly, however, their defective surfaces contain significant populations of surface trap sites that preclude efficient transport. The very large surface area of long wires is at least part of the problem. As electrons, holes, and excitons migrate along a nanowire or quantum wire, they are exposed to an extensive surface and to potentially large numbers of trap sites. A solution to this dilemma might be found by identifying "long" semiconductor nanocrystals of other morphologies that are better passivated. In this Account, we discuss a newly emerging family of flat semiconductor nanocrystals that have surprising characteristics. These thin, flat nanocrystals have up to micrometer-scale (orthogonal) lateral dimensions and thus very large surface areas. Even so, their typical photoluminescence efficiencies of 30% are astonishingly high and are 2 orders of magnitude higher than those typical of semiconductor quantum wires. The very sharp emission spectra of the pseudo-two-dimensional nanocrystals reflect a remarkable uniformity in their discrete thicknesses. Evidence that excitons are effectively delocalized and hence transported over the full dimensions of these nanocrystals has been obtained. The excellent optical properties of the flat semiconductor nanocrystals confirm that they are exceptionally well passivated. This Account summarizes the two synthetic methods that have been developed for the preparation of pseudo-two-dimensional semiconductor nanocrystals. A discussion of their structural features accounts for their discrete, uniform thicknesses and details the crystal-lattice expansions and contractions they exhibit. An analysis of their optical properties justifies the sharp photoluminescence spectra and high photoluminescence efficiencies. Finally, a bilayer mesophase template pathway is elucidated for the formation of the nanocrystals, explaining their flat morphologies. Magic-size nanocluster intermediates are found to be potent nanocrystal nucleants, allowing the synthesis temperatures to be decreased to as low as room temperature. The potential of these flat semiconductor nanocrystals in the form of nanoribbons or nanosheets for long-range energy and charge transport appears to be high.

The Magic-Size Nanocluster (CdSe)34 as a Low-Temperature Nucleant for Cadmium Selenide Nanocrystals; Room-Temperature Growth of Crystalline Quantum Platelets.

Reaction of Cd(OAc)2·2H2O and selenourea in primary-amine/secondary-amine cosolvent mixtures affords crystalline CdSe quantum platelets at room temperature. Their crystallinity is established by X-ray diffraction analysis (XRD), high-resolution transmission electron microscopy (TEM), and their sharp extinction and photoluminescence spectra. Reaction monitoring establishes the magic-size nanocluster (CdSe)34 to be a key intermediate in the growth process, which converts to CdSe quantum platelets by first-order kinetics with no induction period. The results are interpreted to indicate that the critical crystal-nucleus size for CdSe under these conditions is in the range of (CdSe)34 to (CdSe)68. The nanocluster is obtained in isolated form as [(CdSe)34(n-octylamine)16(di-n-pentylamine)2], which is proposed to function as crystal nuclei that may be stored in a bottle.

Excitation Energy Dependence of the Photoluminescence Quantum Yields of Core and Core/Shell Quantum Dots.

The photoluminescence (PL) intensity of semiconductor quantum dots (QDs) is routinely monitored to track the chemical and physical properties within a sample or device incorporating the QDs. A dependence of the PL quantum yields (QYs) on the excitation energy could lead to erroneous conclusions but is commonly not considered. We summarize previous evidence and present results from two methodologies that confirm the possibility of a dependence of the PL QYs on the excitation energy. The data presented indicate that PL QYs of CdSe and CdSe/ZnS QDs suspended in toluene are highest for excitation just above the band gap, Eg, of each. The PL QYs decrease with increasing excitation energies up to 1 eV above Eg. The PL intensity decay profiles recorded for these samples at varying emission and excitation energies indicate that the changes in the PL QYs result from the nonradiative relaxation pathways sampled as the charge carriers relax down to the band edge.

Bright core-shell semiconductor quantum wires.

Colloidal CdTe quantum wires are reported having ensemble photoluminescence efficiencies as high as 25% under low excitation-power densities. High photoluminescence efficiencies are achieved by formation of a monolayer CdS shell on the CdTe quantum wires. Like other semiconductor nanowires, the CdTe quantum wires may contain frequent wurtzite-zinc-blende structural alternations along their lengths. The present results demonstrate that the optical properties, emission-peak shape and photoluminescence efficiencies, are independent of the presence or absence of such structural alternations.

Bound 1D Excitons in Single CdSe Quantum Wires.

Photogenerated electron-hole pairs are observed to be bound as 1D excitons in CdSe quantum wires (QWs) at room temperature. Microscopy experiments performed on dilute samples of CdSe QWs prepared on coverslips with patterned electrodes reveal that there is no change in either the overall photoluminescence (PL) intensity or the distribution of the PL intensity with the application of an external electric field. Changes in the PL intensity, and thus evidence for separate charge carriers within the QWs, are observed only for concentrated samples. In these concentrated samples, a thin film of other compounds, including trioctylphosphine oxide and a bismuth salt formed in the synthesis, is observed to encompass the QWs. The separate charge carriers that influence the PL intensity are attributed to the other compounds in the sample.

Probing the dependence of long-range, four-atom interactions on intermolecular orientation: 3. Hydrogen and iodine.

Two-laser, action spectroscopy experiments have been performed in the I(2)B-X, υ'-0 spectral region on H(2)···I(2) and D(2)···I(2) complexes to investigate the dependence of the H(2)/D(2) + I(2) intermolecular interactions on orientation. The spectra contain features associated with at least two different conformers of the ground-state H(2)/D(2)···I(2)(X,υ'' = 0) complexes; one conformer has a preferred T-shaped geometry with the H(2)/D(2) moiety localized in a potential minimum that is orthogonal to the I-I bond axis, and the second conformer has a linear geometry with the H(2)/D(2) moiety positioned in minima at either end of the I(2) molecule, along the bond axis. Those features associated with complexes containing para-H(2)(j = 0), ortho-H(2)(j = 1), ortho-D(2)(j = 0), and para-D(2)(j = 1) are also assigned. The linear conformers are found to be more strongly bound than the T-shaped conformers with binding energies of 118.9(1.9) cm(-1) versus 91.3-93.3 cm(-1) for the ortho-H(2)···I(2) complexes and 144.2(2.1) cm(-1) versus 107.9 cm(-1) for the para-D(2)···I(2) complexes, respectively. Electronic structure calculations of the complexes containing ICl and I(2) with H(2), He, Ne, and Ar were performed to reveal the nature of the interactions and to shed insight into the origins of the different binding energies. The most stable minima in the H(2)/D(2) + I(2)(B,υ') excited-state potentials have T-shaped geometries. Calculated energies and probability amplitudes of the excited-state levels provide insight into the different excited-state intermolecular vibrational levels accessed by transitions of the two ground-state conformers.

Solution-liquid-solid growth of semiconductor quantum-wire films.

We report the growth of cadmium-selenide (CdSe) quantum-wire (QW) films on a variety of substrates by the solution-liquid-solid (SLS) method. Our SLS syntheses employ size-controlled, near-monodisperse bismuth (Bi) nanoparticles (NPs) as the catalysts for QW growth, which offers several advantages over Bi NPs thermally generated from thin Bi films, including mean QW diameter control, narrow diameter distributions, small diameters in the quantum-confinement regime, and control of the QW density on the substrates. The Bi NPs are deposited on the substrates via drop casting of a Bi-NP solution and subsequently annealed in a reducing atmosphere, a key step to ensure firm attachment of the Bi NPs onto the substrates and maintenance of their catalytic activity for the QW-film growth. The QW growth density is proportional to the Bi-NP coating density, which is determined by the concentration of the Bi-NP deposition solution. Lower concentrations are used for small Bi NPs to reduce their high tendency for agglomeration and to achieve control over mean QW diameter and to produce narrow diameter distributions. Spectroscopic evidence of quantum confinement is provided. Related films of InP, InAs, and PbSe QWs are also described.