ABSTRACT
Silicon carbide (SiC) has outstanding physical properties therefore, diodes based on SiC are being considered for many radiation detection applications such as particle accelerator experiments and medical dosimetry. Moreover, by reducing the metal on the surface of the diode there is the potential to enhance its performance in some fields where the presence of metal is detrimental. To this end, SiC detectors with an epitaxially-grown graphene layer (EG), that substitutes the metallic contact, in the sensitive region were produced at IMB-CNM, profiting from the conductivity of the mono-atomic layer material. To isolate the effect of the graphene on the charge collection, samples without graphene were produced in parallel. In this paper, the effect of EG on Silicon Carbide p-in-n radiation detectors is studied in terms of charge collection with a radioactive source and by means of the transient current technique (TCT), which allows for position-dependent signal formation analysis. As a result of the former, we show the capability of the EG-SiC sensor for charge collection after signal integration, to a resolution close to that of a sensor fully metallised. Moreover, from the TCT studies, we observe uniform charge collection across the active region, as well as an up-to â¼ 40% transient amplitude damping which, compared with the â¼ 90% on the sample containing no metallic contact, proves that the presence of graphene benefits the performance of the device and that the technology is viable for radiation detection as an alternative to metal.
ABSTRACT
Silicon Carbide (SiC) is a radiation hard wide bandgap semiconductor, which makes it an interesting alternative for radiation detector fabrication, with potential applications such as High Energy Physics, synchrotron and radiotherapy instrumentation. In addition, by reducing the amount of metal over the active area of said detectors (typically used for electrical connectivity with the implant of the pn-junction) unwanted effects from secondary interactions which can affect the accuracy of the measurement can be diminished, essential to meet the medical standards of precision. In this article, the use of epitaxially-grown graphene is explored as an alternative to metallic contacts with these prototypes. To this end, the first prototypes of SiC diodes with epitaxial graphene contacts were produced at IMB-CNM for radiation detection,along with reference devices. In order to characterise the feasibility of the technology in the medical application, the dose rate linearity of the SiC device with graphene was measured in a radiotherapy Linac in the dose rate range of 1-6 Gy/min. The response of the device was compared to that observed on devices with similar geometries reported elsewhere. To fully characterise the devices, the same exercise was repeated in a laboratory X-ray tube. Under the later set-up, the prototype is compared against a device with a fully metallised active region.
ABSTRACT
We present the results of our performance studies of the upgraded Cherenkov time-of-flight (ToF) detector for the AFP (ATLAS Forward Proton) project. The latest version consists of solid L-shaped fused silica bars, new customized ALD-coated micro-channel plate photomultipliers (MCP-PMTs) miniPlanacon XPM85112-S-R2D2 with an extended lifetime which operate at low gains (order of 103), and an updated construction. The improvements were aimed to increase the efficiency, the lifetime as well as the radiation hardness of the detector which has been designed to operate in high radiation areas (above 400 kGy/year). The detector was finally tested at the CERN-SPS test-beam facility (120 GeV π+ particles) in August 2021 prior to its installation at the Large Hadron Collider (LHC) at CERN. Measurements proved the detector kept its inner timing resolution of 20 ps despite the rather low gain of its photodetector and reduced optical throughput caused by inevitable changes in the detector geometry.
