Plasmonic 3D Self-Folding Architectures via Vacuum Microforming.

3D self-folding microarchitectures have been studied enormously since the past decade, because of the potential of utilizing the third dimension to reach a new level of device integration. However, incorporating various functionalities is a great challenge, due to the limited folding force and choice of materials. In particular, self-folding microarchitectures with advanced optical properties have yet to be demonstrated. Here, a unique folding technique is developed, namely vacuum microforming, successfully demonstrating the self-folding of microcubes that can be completed within 30 ms, a few orders of magnitudes faster as compared to various established strategies reported so far. Simultaneously, a metal-insulator-metal (MIM) plasmonic nanostructure is fabricated, invoking strong gap plasmon to obtain a wide and robust angle-independent optical behavior and high environmental sensitivity that is close to the theoretical limit. It is successfully proven that such superb plasmonic properties are well preserved in 3D architectures throughout the folding process. The nanofabrication method together with the self-folding strategy not only provide the fastest folding process so far, compatible for high-volume fabrication, but also create new opportunities in integrating various functionalities, more specifically, optical properties for untethered optical sensing and identification.

Data on single pulse fs laser induced submicron bubbles in the subsurface region of soda-lime glass.

Submicron bubble formation in the subsurface range of soda-lime glass is investigated. The bubbles are induced by single femtosecond laser pulse irradiation with the wavelength of λ = 775 nm, the pulse duration of tp = 150 fs and the laser beam diameter of ∼12 µm. The data shows the changes of the morphologies of the soda-lime glass after laser irradiation with different pulse energy. Moreover, the data shows the detail of the cross-section view of the bubble during the Focused ion beam (FIB) cutting. It is found that the bubbles can be formed in a rather narrow pulse energy range with the bubbles in the size of 300 nm ∼3 µm which is much smaller than the laser beam diameter. Data presented in this article are related to the research article "Submicron bubbles/voids formation in the subsurface region of soda-lime glass by single pulse fs laser-induced spallation" [1].

Direct Measurement of Crystal Growth Velocity in Epitaxial Phase-Change Material Thin Films.

Central to the use of Ge-Sb-Te based phase-change materials for data storage applications is their crystallization capability since it determines memory writing time. Although being intensively studied to identify intrinsic limits and develop strategies to enhance memory performance, the crystallization process in these materials is still not fully explored. Therefore, this study focuses on the determination of crystal growth dynamics in an epitaxial phase-change material thin film model system offering the advantage of high crystalline quality and application-relevant sizing. By introducing a method that combines time-resolved reflectivity measurements with high-resolution scanning transmission electron microscopy, crystal growth velocities upon fast cooling after single ns-laser pulse irradiation of the prototypical phase-change material Ge2Sb2Te5 are determined. As a result, an increase in crystal growth velocity from 0.4 to 1.7 m/s with increasing laser fluence is observed with a maximum rate of 1.7 m/s as the upper detectable limit of the studied material.

Ultrafast interfacial transformation from 2D- to 3D-bonded structures in layered Ge-Sb-Te thin films and heterostructures.

Two-dimensional van-der-Waals-bonded chalcogenide heterostructures have recently received a lot of attention due to promising applications in the fields of photonics, plasmonics and data storage. Of particular interest is the interfacial switching process inherent in these structures, which is assumed to occur locally at the van-der-Waals interfaces and thus represents an intracrystalline transition. However, detailed experimental studies on the underlying mechanism are still lacking. In this work, epitaxially grown thin films consisting of van-der-Waals-bonded Ge-Sb-Te and GeTe/Sb2Te3 based heterostructures are employed as a model system to investigate structural changes induced by a single ns-laser pulse. A combined approach using X-ray diffraction and advanced transmission electron microscopy is applied to study phase transitions within the Ge-Sb-Te-based thin films in detail. The results reveal ultrafast transitions from 2D-bonded layered structures to 3D-bonded structures via a transient molten phase. Moreover, the interface between the 2D- and 3D-bonded structures is well defined by a single van-der-Waals gap, suggesting that the transition can be controlled very precisely in its spatial extent by an appropriate choice of the laser fluence. Overall, the results of this work offer a new perspective on the switching mechanism in Ge-Sb-Te-based materials and demonstrate the potential of van-der-Waals-bonded Ge-Sb-Te compounds to be applied for novel phase-change memory concepts.

Crystallization of Ge2Sb2Te5 thin films by nano- and femtosecond single laser pulse irradiation.

The amorphous to crystalline phase transformation of Ge2Sb2Te5 (GST) films by UV nanosecond (ns) and femtosecond (fs) single laser pulse irradiation at the same wavelength is compared. Detailed structural information about the phase transformation is collected by x-ray diffraction and high resolution transmission electron microscopy (TEM). The threshold fluences to induce crystallization are determined for both pulse lengths. A large difference between ns and fs pulse irradiation was found regarding the grain size distribution and morphology of the crystallized films. For fs single pulse irradiated GST thin films, columnar grains with a diameter of 20 to 60 nm were obtained as evidenced by cross-sectional TEM analysis. The local atomic arrangement was investigated by high-resolution Cs-corrected scanning TEM. Neither tetrahedral nor off-octahedral positions of Ge-atoms could be observed in the largely defect-free grains. A high optical reflectivity contrast (~25%) between amorphous and completely crystallized GST films was achieved by fs laser irradiation induced at fluences between 13 and 16 mJ/cm(2) and by ns laser irradiation induced at fluences between 67 and 130 mJ/cm(2). Finally, the fluence dependent increase of the reflectivity is discussed in terms of each photon involved into the crystallization process for ns and fs pulses, respectively.

Ion-exchange molecularly imprinted polymer for the extraction of negatively charged acesulfame from wastewater samples.

Acesulfame is a known indicator that is used to identify the introduction of domestic wastewater into water systems. It is negatively charged and highly water-soluble at environmental pH values. In this study, a molecularly imprinted polymer (MIP) was synthesized for negatively charged acesulfame and successfully applied for the selective solid phase extraction (SPE) of acesulfame from influent and effluent wastewater samples. (Vinylbenzyl)trimethylammonium chloride (VBTA) was used as a novel phase transfer reagent, which enhanced the solubility of negatively charged acesulfame in the organic solvent (porogen) and served as a functional monomer in MIP synthesis. Different molecularly imprinted polymers were synthesized to optimize the extraction capability of acesulfame. The different materials were evaluated using equilibrium rebinding experiments, selectivity experiments and scanning electron microscopy (SEM). The most efficient MIP was used in a molecularly imprinted-solid phase extraction (MISPE) protocol to extract acesulfame from wastewater samples. Using high-performance liquid chromatography-tandem mass spectrometry (HPLC-MS-MS) analysis, detection and quantification limits were achieved at 0.12µgL(-1) and 0.35µgL(-1), respectively. Certain cross selectivity for the chemical compounds containing negatively charged sulfonamide functional group was observed during selectivity experiments.