ABSTRACT
Nanocrystals have a great potential for future materials with tunable bandgap, due to their optical properties that are related with the material used, their sizes and their surface termination. Here, we concentrate on the silicon-tin alloy for photovoltaic applications due to their bandgap, lower than bulk Si, and also the possibility to activate direct band to band transition for high tin concentration. We synthesized silicon-tin alloy nanocrystals (SiSn-NCs) with diameter of about 2-3 nm by confined plasma technique employing a femtosecond laser irradiation on amorphous silicon-tin substrate submerged in liquid media. The tin concentration is estimated to be [Formula: see text], being the highest Sn concentration for SiSn-NCs reported so far. Our SiSn-NCs have a well-defined zinc-blend structure and, contrary to pure tin NCs, also an excellent thermal stability comparable to highly stable silicon NCs. We demonstrate by means of high resolution synchrotron XRD analysis (SPring 8) that the SiSn-NCs remain stable from room temperature up to [Formula: see text] with a relatively small expansion of the crystal lattice. The high thermal stability observed experimentally is rationalized by means of first-principle calculations.
ABSTRACT
We discuss the electronic properties of quantum-confined nanocrystals. In particular, we show how, starting from the discrete molecular states of small nanocrystals, an approximate band structure (quasi-band structure) emerges with increasing particle size. Finite temperature is found to broaden the discrete states in energy space forming even for nanocrystals in the quantum-confinement regime quasi-continuous bands in k-space. This bands can be, to a certain extend, interpreted along the lines of standard band structure theory, while taking also finite size and surface effects into account. We discuss this on various prototypical nanocrystal systems.
ABSTRACT
Organometal trihalide perovskite solar cells have attracted monumental attention in recent years. Today's best devices, based on a three-dimensional perovskite structure of corner-sharing PbI6 octahedra, are unstable, toxic, and display hysteresis in current-voltage measurements. We present zero-dimensional organic-inorganic hybrid solar cells based on methylammonium iodo bismuthate (CH3NH3)3(Bi2I9) (MABI) comprising a Bi2I9 bioctahedra and observe very low hysteresis for scan rates in the broad range of 150 mV s-1 to 1500 mV s-1 without any interfacial layer engineering. We confirm good stability for devices produced and stored in open air without humidity control. The MABI structure can also accommodate silicon nanocrystals, leading to an enhancement in the short-circuit current. Through the material MABI, we demonstrate a promising alternative to the organometal trihalide perovskite class and present a model material for future composite third-generation photovoltaics.
ABSTRACT
Core-level and valence band spectra of In x Ga1-x N films were measured using hard x-ray photoemission spectroscopy (HX-PES). Fine structure, caused by the coupling of the localized Ga 3d and In 4d with N 2s states, was experimentally observed in the films. Because of the large detection depth of HX-PES (â¼20 nm), the spectra contain both surface and bulk information due to the surface band bending. The In x Ga1-x N films (x = 0-0.21) exhibited upward surface band bending, and the valence band maximum was shifted to lower binding energy when the mole fraction of InN was increased. On the other hand, downward surface band bending was confirmed for an InN film with low carrier density despite its n-type conduction. Although the Fermi level (EF) near the surface of the InN film was detected inside the conduction band as reported previously, it can be concluded that EF in the bulk of the film must be located in the band gap below the conduction band minimum.
