1.
Small
; 11(40): 5375-80, 2015 Oct 28.
Article
in English
| MEDLINE
| ID: mdl-26308371
ABSTRACT
A hexagonal boron nitride monolayer with aligned orientations is grown on reusable semiconducting germanium. The number of primary orientations of the h-BN domains depends on the symmetry of the underlying crystal face, and Ge (110) gives rise to only two opposite orientations. The structures and electrical properties of grain boundaries between h-BN domains with opposite orientations are also systematically analyzed.