1.
Nanoscale Res Lett
; 9(1): 570, 2014.
Article
in English
| MEDLINE
| ID: mdl-25324708
ABSTRACT
In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 µm with a diameter of about 19 nm. The introduction of pause time (T off) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with T off. The hole concentration decreasing at the pore tips during the T off is the main reason for uniformity.