ABSTRACT
Tunable electromagnets and corresponding devices, such as magnetic lenses or stigmators, are the backbone of high-energy charged particle optical instruments, such as electron microscopes, because they provide higher optical power, stability, and lower aberrations compared to their electric counterparts. However, electromagnets are typically macroscopic (super-)conducting coils, which cannot generate swiftly changing magnetic fields, require active cooling, and are structurally bulky, making them unsuitable for fast beam manipulation, multibeam instruments, and miniaturized applications. Here, we present an on-chip microsized magnetic charged particle optics realized via a self-assembling micro-origami process. These micro-electromagnets can generate alternating magnetic fields of about ±100 mT up to a hundred MHz, supplying sufficiently large optical power for a large number of charged particle optics applications. That particular includes fast spatiotemporal electron beam modulation such as electron beam deflection, focusing, and wave front shaping as required for stroboscopic imaging.
ABSTRACT
Layered van der Waals materials of the family TaTMTe4 (TM = Ir, Rh, Ru) are showing interesting electronic properties. We report the growth and characterization of TaIrTe4, TaRhTe4, TaIr1-xRhxTe4 (x = 0.06, 0.14, 0.78, 0.92), Ta1+xRu1-xTe4 single crystals. X-ray powder diffraction confirms that TaRhTe4 is isostructural to TaIrTe4. All these compounds are metallic with diamagnetic behavior. Below T ≈ 4 K we observed signatures of the superconductivity in the TaIr1-xRhxTe4 compounds for x = 0.92. All samples show weak quadratic-in-field magnetoresistance (MR). However, for TaIr1-xRhxTe4 with x ≈ 0.78, the MR has a linear term dominating in low fields that indicates the presence of Dirac cones in the vicinity of the Fermi energy. For TaRhTe4 series the MR is almost isotropic. Electronic structure calculations for TaIrTe4 and TaRhTe4 reveal appearance of the Rh band close to the Fermi level.
ABSTRACT
Plasmonic nanostructures and -devices are rapidly transforming light manipulation technology by allowing to modify and enhance optical fields on sub-wavelength scales. Advances in this field rely heavily on the development of new characterization methods for the fundamental nanoscale interactions. However, the direct and quantitative mapping of transient electric and magnetic fields characterizing the plasmonic coupling has been proven elusive to date. Here we demonstrate how to directly measure the inelastic momentum transfer of surface plasmon modes via the energy-loss filtered deflection of a focused electron beam in a transmission electron microscope. By scanning the beam over the sample we obtain a spatially and spectrally resolved deflection map and we further show how this deflection is related quantitatively to the spectral component of the induced electric and magnetic fields pertaining to the mode. In some regards this technique is an extension to the established differential phase contrast into the dynamic regime.
ABSTRACT
Envisaged applications of Skyrmions in magnetic memory and logic devices crucially depend on the stability and mobility of these topologically nontrivial magnetic textures in thin films. We present for the first time quantitative maps of the magnetic induction that provide evidence for a 3D modulation of the Skyrmionic spin texture. The projected in-plane magnetic induction maps as determined from in-line and off-axis electron holography carry the clear signature of Bloch Skyrmions. However, the magnitude of this induction is much smaller than the values expected for homogeneous Bloch Skyrmions that extend throughout the thickness of the film. This finding can only be understood if the underlying spin textures are modulated along the out-of-plane z direction. The projection of (the in-plane magnetic induction of) helices is further found to exhibit thickness-dependent lateral shifts, which show that this z modulation is accompanied by an (in-plane) modulation along the x and y directions.
ABSTRACT
Off-axis electron holography is a well-established transmission electron microscopy technique, typically employed to investigate electric and magnetic fields in and around nanoscale materials, which modify the phase of the reconstructed electron wave function. Here, we elaborate on a detailed analysis of the two characteristic intensity terms that are completing the electron hologram, the conventional image intensity and the interference fringe intensity. We show how both are related to elastic and inelastic scattering absorption at the sample and how they may be separated to analyze the chemical composition of the sample. Since scattering absorption is aperture dependent, a quantitative determination of the corresponding attenuation coefficients (reciprocal mean free path lengths) requires the use of holographic image modi with well-defined objective aperture stops in the back-focal plane of the objective lens. The proposed method extends quantitative electron holography to a correlated three-in-one characterization of electric and magnetic fields, Z-contrast and dielectric losses in materials.
ABSTRACT
Atomic resolution transmission electron microscopy records the spatially resolved scattered electron density to infer positions, density, and species of atoms. These data are indispensable for studying the relation between structure and properties in solids. Here, we show how this signal can be augmented by the lateral probability current of the scattered electrons in the object plane at similar resolutions and fields of view. The currents are reconstructed from a series of three atomic resolution TEM images recorded under a slight difference of perpendicular line foci. The technique does not rely on the coherence of the electron beam and can be used to reveal electric, magnetic, and strain fields with incoherent electron beams as well as correlations in inelastic transitions, such as electron magnetic chiral dichroism.
ABSTRACT
Here, we study the effect of dynamic scattering on the projected geometric phase and strain maps reconstructed using dark-field electron holography (DFEH) for non-uniformly strained crystals. The investigated structure consists of a {SiGe/Si} superlattice grown on a (001)-Si substrate. The three-dimensional strain field within the thin TEM lamella is modelled by the finite element method. The observed projected strain is simulated in two ways by multiplying the strain at each depth in the crystal by a weighting function determined from a recently developed analytical two-beam dynamical theory, and by simply taking the average value. We demonstrate that the experimental results need to be understood in terms of the dynamical theory and good agreement is found between the experimental and simulated results. Discrepancies do remain for certain cases and are likely to be from an imprecision in the actual two-beam diffraction conditions, notably the deviation parameter, and points to limitations in the 2-beam approximation. Finally, a route towards a 3D reconstruction of strain fields is proposed.
ABSTRACT
Tomographic techniques play a crucial role in imaging methods such as transmission electron microscopy (TEM) due to their unique capabilities to reconstruct three-dimensional object information. However, the accuracy of the two standard tomographic reconstruction techniques, the weighted back-projection (W-BP) and the simultaneous iterative reconstruction technique (SIRT) is reduced under common experimental restrictions, such as limited tilt range or noise. We demonstrate that the combination of W-BP and SIRT leads to an improved tomographic reconstruction technique: the weighted SIRT. Convergence, resolution and reconstruction error of the W-SIRT are analyzed by a detailed analytical, numerical, and experimental comparison with established methods. Our reconstruction technique is not restricted to TEM tomography but can be applied to all problems sharing single axis imaging geometry.
ABSTRACT
A model for a new electron-vortex beam production method is proposed and experimentally demonstrated. The technique calls on the controlled manipulation of the degrees of freedom of the lens aberrations to achieve a helical phase front. These degrees of freedom are accessible by using the corrector lenses of a transmission electron microscope. The vortex beam is produced through a particular alignment of these lenses into a specifically designed astigmatic state and applying an annular aperture in the condenser plane. Experimental results are found to be in good agreement with simulations.
ABSTRACT
The distribution and movement of charge is fundamental to many physical phenomena, particularly for applications involving nanoparticles, nanostructures, and electronic devices. However, there are very few ways of quantifying charge at the necessary length scale. Here, we show that aberration-corrected electron holography is capable of counting the charge on individual nanoparticles to a precision of one elementary unit of charge. We present a method that measures charges within predefined contours by directly applying Gauss's law at the nanoscale. We perform a statistical analysis to reveal the relationship between the size of the contours and the precision of the charge measurement and present strategies to optimize the spatial and signal resolution for the presented method.
ABSTRACT
The performance of ferroelectric devices, for example, the ferroelectric field effect transistor, is reduced by the presence of crystal defects such as edge dislocations. For example, it is well-known that edge dislocations play a crucial role in the formation of ferroelectric dead-layers at interfaces and hence finite size effects in ferroelectric thin films. The detailed lattice structure including the relevant electromechanical coupling mechanisms in close vicinity of the edge dislocations is, however, not well-understood, which hampers device optimization. Here, we investigate edge dislocations in ferroelectric BiFeO3 by means of spherical aberration-corrected scanning transmission electron microscopy, a dedicated model-based structure analysis, and phase field simulations. Unit-cell-wise resolved strain and polarization profiles around edge dislocation reveal a wealth of material states including polymorph nanodomains and multiple domain walls characteristically pinned to the dislocation. We locally determine the piezoelectric tensor and identify piezoelectric coupling as the driving force for the observed phenomena, explaining, for example, the orientation of the domain wall with respect to the edge dislocation. Furthermore, an atomic model for the dislocation core is derived.
Subject(s)
Beryllium/chemistry , Electricity , Ferric Compounds/chemistry , Nanostructures/chemistry , Microscopy, Electron, Scanning Transmission , Particle Size , Transistors, ElectronicABSTRACT
For the characterization of light materials using transmission electron microscopy, a low electron acceleration voltage of 80 kV or even 60 kV is attractive due to reduced beam damage to the specimen. The concomitant reduction in resolving power of the microscope can be restored when using spherical aberration (C(s) ) correctors, which for the most part are only available in the latest and most expensive microscopes. Here, we show that upgrading of existing TEMs is an attractive and cost-effective alternative. We report on the low-voltage performance on graphitic material of a JEOL JEM-2010F built in the early 1990s and retro-fitted with a conventional imaging C(s) corrector and a probe C(s) corrector. The performance data show C(s) retro-fitted instruments can compete very favourably against more modern state-of-the-art instruments in both conventional imaging (TEM) and scanning (STEM) modes.
ABSTRACT
Domain walls (DWs) substantially influence a large number of applications involving ferroelectric materials due to their limited mobility when shifted during polarization switching. The discovery of greatly enhanced conduction at BiFeO(3) DWs has highlighted yet another role of DWs as a local material state with unique properties. However, the lack of precise information on the local atomic structure is still hampering microscopical understanding of DW properties. Here, we examine the atomic structure of BiFeO(3) 109° DWs with pm precision by a combination of high-angle annular dark-field scanning transmission electron microscopy and a dedicated structural analysis. By measuring simultaneously local polarization and strain, we provide direct experimental proof for the straight DW structure predicted by ab initio calculations as well as the recently proposed theory of diffuse DWs, thus resolving a long-standing discrepancy between experimentally measured and theoretically predicted DW mobilities.
ABSTRACT
Strain engineering enables modification of the properties of thin films using the stress from the substrates on which they are grown. Strain may be relaxed, however, and this can also modify the properties thanks to the coupling between strain gradient and polarization known as flexoelectricity. Here we have studied the strain distribution inside epitaxial films of the archetypal ferroelectric PbTiO(3), where the mismatch with the substrate is relaxed through the formation of domains (twins). Synchrotron X-ray diffraction and high-resolution scanning transmission electron microscopy reveal an intricate strain distribution, with gradients in both the vertical and, unexpectedly, the horizontal direction. These gradients generate a horizontal flexoelectricity that forces the spontaneous polarization to rotate away from the normal. Polar rotations are a characteristic of compositionally engineered morphotropic phase boundary ferroelectrics with high piezoelectricity; flexoelectricity provides an alternative route for generating such rotations in standard ferroelectrics using purely physical means.