Spectral Asymmetry Induces a Re-Entrant Quantum Hall Effect in a Topological Insulator.

The band inversion of topological materials in three spatial dimensions is intimately connected to the parity anomaly of 2D massless Dirac fermions, known from quantum field theory. At finite magnetic fields, the parity anomaly reveals itself as a non-zero spectral asymmetry, i.e., an imbalance between the number of conduction and valence band Landau levels, due to the unpaired zero Landau level. This work reports the realization of this 2D Dirac physics at a single surface of the 3D topological insulator (Hg,Mn)Te. An unconventional re-entrant sequence of quantized Hall plateaus in the measured Hall resistance can be directly related to the occurrence of spectral asymmetry in a single topological surface state. The effect should be observable in any topological insulator where the transport is dominated by a single Dirac surface state.

Counterpropagating topological and quantum Hall edge channels.

The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transport gap in disordered two dimensional topological insulators in perpendicular magnetic fields of up to 16 T. Instead, we observe that a topological edge channel (from band inversion) coexists with a counterpropagating quantum Hall edge channel for magnetic fields at which the transition to the insulating regime is expected. For larger fields, we observe only the quantum Hall edge channel with transverse resistance close to h/e2. By tuning the disorder using different fabrication processes, we find evidence that this unexpected ν = 1 plateau originates from extended quantum Hall edge channels along a continuous network of charge puddles at the edges of the device.

Finite Field Transport Response of a Dilute Magnetic Topological Insulator-Based Josephson Junction.

Hybrid samples combining superconductors with magnetic topological insulators are a promising platform for exploring exotic new transport physics. We examine a Josephson junction of such a system based on the dilute magnetic topological insulator (Hg,Mn)Te and the type II superconductor MoRe. In the zero and very low field limits, to the best of our knowledge, the device shows, for the first time, an induced supercurrent through a magnetically doped semiconductor, in this case, a topological insulator. At higher fields, a rich and hysteretic magnetoresistance is revealed. Careful analysis shows that the explanation of this behavior can be found in magnetic flux focusing stemming from the Meissner effect in the superconductor, without invoking any role of proximity-induced superconductivity. The phenomena is important because it will ubiquitously coexist with any exotic new physics that may be present in this class of devices.

Quantized spin Hall conductance in a magnetically doped two dimensional topological insulator.

Soon after the discovery of the quantum spin Hall effect, it has been predicted that a magnetic impurity in the presence of strong Coulomb interactions will destroy the quantum spin Hall effect. However, the fate of the quantum spin Hall effect in the presence of magnetic impurities has not yet been experimentally investigated. Here, we report the successful experimental demonstration of a quantized spin Hall resistance in HgTe quantum wells dilutely alloyed with magnetic Mn atoms. These quantum wells exhibit an inverted band structure that is very similar to that of the undoped material. Micron sized devices of (Hg,Mn)Te quantum well (in the topological phase) show a quantized spin Hall resistance of h/2e2 at low temperatures and zero magnetic field. At finite temperatures, we observe signatures of the Kondo effect due to interaction between the helical edge channels and magnetic impurities. Our work lays the foundation for future investigations of magnetically doped quantum spin Hall materials towards the realization of chiral Majorana fermions.

Emergent quantum Hall effects below 50 mT in a two-dimensional topological insulator.

The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials, which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization in conventional quantum anomalous Hall systems makes it challenging to induce superconductivity. Here, we report two different emergent quantum Hall effects in (Hg,Mn)Te quantum wells. First, a previously unidentified quantum Hall state emerges from the quantum spin Hall state at an exceptionally low magnetic field of ~50 mT. Second, tuning toward the bulk p-regime, we resolve quantum Hall plateaus at fields as low as 20 to 30 mT, where transport is dominated by a van Hove singularity in the valence band. These emergent quantum Hall phenomena rely critically on the topological band structure of HgTe, and their occurrence at very low fields makes them an ideal candidate for realizing chiral Majorana fermions.

Dynamical Separation of Bulk and Edge Transport in HgTe-Based 2D Topological Insulators.

Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the response of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales and suggest that edge states can be addressed selectively on timescales over which bulk carriers are frozen.

Approaching Quantization in Macroscopic Quantum Spin Hall Devices through Gate Training.

Quantum spin Hall edge channels hold great promise as dissipationless one-dimensional conductors. However, the ideal quantized conductance of 2e^{2}/h is only found in very short channels-in contradiction with the expected protection against backscattering of the topological insulator state. In this Letter we show that enhancing the band gap does not improve quantization. When we instead alter the potential landscape by charging trap states in the gate dielectric using gate training, we approach conductance quantization for macroscopically long channels. Effectively, the scattering length increases to 175 µm, more than 1 order of magnitude longer than in previous works for HgTe-based quantum wells. Our experiments show that the distortion of the potential landscape by impurities, leading to puddle formation in the narrow gap material, is the major obstacle for observing undisturbed quantum spin Hall edge channel transport.

Topological superconductivity in a phase-controlled Josephson junction.

Topological superconductors can support localized Majorana states at their boundaries1-5. These quasi-particle excitations obey non-Abelian statistics that can be used to encode and manipulate quantum information in a topologically protected manner6,7. Although signatures of Majorana bound states have been observed in one-dimensional systems, there is an ongoing effort to find alternative platforms that do not require fine-tuning of parameters and can be easily scaled to large numbers of states8-21. Here we present an experimental approach towards a two-dimensional architecture of Majorana bound states. Using a Josephson junction made of a HgTe quantum well coupled to thin-film aluminium, we are able to tune the transition between a trivial and a topological superconducting state by controlling the phase difference across the junction and applying an in-plane magnetic field22. We determine the topological state of the resulting superconductor by measuring the tunnelling conductance at the edge of the junction. At low magnetic fields, we observe a minimum in the tunnelling spectra near zero bias, consistent with a trivial superconductor. However, as the magnetic field increases, the tunnelling conductance develops a zero-bias peak, which persists over a range of phase differences that expands systematically with increasing magnetic field. Our observations are consistent with theoretical predictions for this system and with full quantum mechanical numerical simulations performed on model systems with similar dimensions and parameters. Our work establishes this system as a promising platform for realizing topological superconductivity and for creating and manipulating Majorana modes and probing topological superconducting phases in two-dimensional systems.

Publisher's Note: Strain Engineering of the Band Gap of HgTe Quantum Wells Using Superlattice Virtual Substrates [Phys. Rev. Lett. 117, 086403 (2016)].

This corrects the article DOI: 10.1103/PhysRevLett.117.086403.

Strain Engineering of the Band Gap of HgTe Quantum Wells Using Superlattice Virtual Substrates.

The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low temperatures. Here, we utilize the strain dependence of the band structure of HgTe QWs to address this limitation. We use CdTe-Cd_{0.5}Zn_{0.5}Te strained-layer superlattices on GaAs as virtual substrates with adjustable lattice constant to control the strain of the QW. We present magnetotransport measurements, which demonstrate a transition from a semimetallic to a 2D-TI regime in wide QWs, when the strain is changed from tensile to compressive. Most notably, we demonstrate a much enhanced energy gap of 55 meV in heavily compressively strained QWs. This value exceeds the highest possible gap on common II-VI substrates by a factor of 2-3, and extends the regime where the topological conductance prevails to much higher temperatures.