High-resolution subsurface microscopy of CMOS integrated circuits using radially polarized light.

Under high numerical aperture (NA) conditions, a linearly polarized plane wave focuses to a spot that is extended along the E-field vector, but radially polarized light is predicted to form a circular spot whose diameter equals the narrower dimension obtained with linear polarization. This effect provides an opportunity for improved resolution in high-NA microscopy, and here we present a performance study of subsurface two-photon optical-beam-induced current solid-immersion-lens microscopy of a complementary metal-oxide semiconductor integrated circuit, showing a resolution improvement by using radially polarized illumination. By comparing images of the same structural features we show that radial polarization achieves a resolution of 126 nm, while linear polarization achieves resolutions of 122 and 165 nm, depending on the E-field orientation. These results are consistent with the theoretically expected behavior and are supported by high-resolution images which show superior feature definition using radial polarization.

Octave-spanning super-continuum from a silica photonic crystal fiber pumped by a 386 MHz Yb:fiber laser.

We report octave-spanning super-continuum generation in a silica photonic crystal fiber (PCF) pumped by a compact, efficient, mode-locked all-normal dispersion Yb:fiber laser. The laser achieved 45% optical-to-optical efficiency by using an optimized resonator design, producing chirped 750 fs pulses with a repetition rate of 386 MHz and an average power of 605 mW. The chirped pulses were compressed to 110 fs with a loss of only 4% by using multiple reflections on a pair of Gires-Tournois interferometer mirrors, yielding an average power of up to 580 mW. The corresponding peak power was 13.7 kW and produced a super-continuum spectrum spanning from 696-1392 nm.

Circuit editing of copper and low-k dielectrics in nanotechnology devices.

Circuit editing of integrated circuit (IC) devices fabricated in 100-nm and smaller technologies has moved IC microsurgery into nanosurgery. Although the dimensions are challenging, an additional challenge is to mill the dielectric materials that are employed controllably. There are interesting biological similarities as carbon content and porosity increase in order to minimize the dielectric constant. These porous organic materials are extremely delicate and are readily carbonized under the ion beam. Besides minimizing carbonization, the etching of these materials must be minimized during the removal of a metallized area. A further challenge has been caused by the continuing tightening of fabrication specifications; the dielectric materials are dispersed (although not randomly) within the metallizations in order to reduce variations during a planarization process. In addition, to improve planarization tolerances, dummy metallizations are placed in regions where the need is only mechanical and not electrical. Neither of these 'extra' structures is readily available to assist in edit planning. To address these dielectrics and the structures in which they are found, several techniques--including chemistries--have been developed. Methods to increase the etching of metallization relative to the dielectric are reviewed, including chemistries that improve the selectivity of copper to dielectric.