ABSTRACT
We present a laser-driven, bright, and broadband (50 to 1500 eV) soft-x-ray plasma source with <10 ps pulse duration. This source is employed in two complementary, laboratory-scale beamlines for time-resolved, magnetic resonant scattering and spectroscopy, as well as near-edge x-ray absorption fine-structure (NEXAFS) spectroscopy. In both beamlines, dedicated reflection zone plates (RZPs) are used as single optical elements to capture, disperse, and focus the soft x rays, reaching resolving powers up to E/ΔE > 1000, with hybrid RZPs at the NEXAFS beamline retaining a consistent E/ΔE > 500 throughout the full spectral range, allowing for time-efficient data acquisition. We demonstrate the versatility and performance of our setup by a selection of soft-x-ray spectroscopy and scattering experiments, which so far have not been possible on a laboratory scale. Excellent data quality, combined with experimental flexibility, renders our approach a true alternative to large-scale facilities, such as synchrotron-radiation sources and free-electron lasers.
ABSTRACT
This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures. The experimental samples were grown by ion-beam deposition. We showed that using three vertically stacked layers of InAs quantum dots separated by thin GaAs barrier layers was accompanied by a red-shift of the photoluminescence peak of InAs/GaAs heterostructures. An increase in the thickness of the GaAs barrier layers was accompanied by a blue shift of the photoluminescence peak. The effect of isovalent Bi doping of the GaAs barrier layers on the structural and optical properties of the InAs/GaAs heterostructures was investigated. It was found that the Bi content up to 4.96 atom % in GaAs decreases the density of InAs quantum dots from 1.53 × 1010 to 0.93 × 1010 cm-2. In addition, the average lateral size of the InAs quantum dots increased from 14 to 20 nm, due to an increase in the surface diffusion of In. It is shown that isovalent doping of GaAs potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV.
ABSTRACT
The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 1011 cm-2 are formed. The technique of controlled doping of InAs/GaAs nanostructures using a SnTe solid-state source was proposed. It has been established that a maximum donor concentration of 8.7·1018 cm-3 in the GaAs spacer layer is reached at an evaporation temperature of 415 °Ð¡. At the same time, impurity accumulation in the growth direction was observed. We have shown that increasing the impurity doping of the GaAs barrier layer increases the intensity of photoluminescence peaks of the ground state and the first excited state of the InAs quantum dots.
