Bimodal Control of Heat Transport at Graphene-Metal Interfaces Using Disorder in Graphene.

Thermal energy transport across the interfaces of physically and chemically modified graphene with two metals, Al and Cu, was investigated by measuring thermal conductance using the time-domain thermoreflectance method. Graphene was processed using a He2+ ion-beam with a Gaussian distribution or by exposure to ultraviolet/O3, which generates structural or chemical disorder, respectively. Hereby, we could monitor changes in the thermal conductance in response to varying degrees of disorder. We find that the measured conductance increases as the density of the physical disorder increases, but undergoes an abrupt modulation with increasing degrees of chemical modification, which decreases at first and then increases considerably. Moreover, we find that the conductance varies inverse proportionally to the average distance between the structural defects in the graphene, implying a strong in-plane influence of phonon kinetics on interfacial heat flow. We attribute the bimodal results to an interplay between the distinct effects on graphene's vibrational modes exerted by graphene modification and by the scattering of modes.

Seebeck effect at the atomic scale.

The atomic variations of electronic wave functions at the surface and electron scattering near a defect have been detected unprecedentedly by tracing thermoelectric voltages given a temperature bias [Cho et al., Nat. Mater. 12, 913 (2013)]. Because thermoelectricity, or the Seebeck effect, is associated with heat-induced electron diffusion, how the thermoelectric signal is related to the atomic-scale wave functions and what the role of the temperature is at such a length scale remain very unclear. Here we show that coherent electron and heat transport through a pointlike contact produces an atomic Seebeck effect, which is described by the mesoscopic Seebeck coefficient multiplied by an effective temperature drop at the interface. The mesoscopic Seebeck coefficient is approximately proportional to the logarithmic energy derivative of local density of states at the Fermi energy. We deduced that the effective temperature drop at the tip-sample junction could vary at a subangstrom scale depending on atom-to-atom interaction at the interface. A computer-based simulation method of thermoelectric images is proposed, and a point defect in graphene was identified by comparing experiment and the simulation of thermoelectric imaging.

Thermoelectric imaging of structural disorder in epitaxial graphene.

Heat is a familiar form of energy transported from a hot side to a colder side of an object, but not a notion associated with microscopic measurements of electronic properties. A temperature difference within a material causes charge carriers, electrons or holes to diffuse along the temperature gradient inducing a thermoelectric voltage. Here we show that local thermoelectric measurements can yield high-sensitivity imaging of structural disorder on the atomic and nanometre scales. The thermopower measurement acts to amplify the variations in the local density of states at the Fermi level, giving high differential contrast in thermoelectric signals. Using this imaging technique, we uncovered point defects in the first layer of epitaxial graphene, which generate soliton-like domain-wall line patterns separating regions of the different interlayer stacking of the second graphene layer.

Thermoelectric properties of Bi2Te3-In2Se3 composite thin films prepared by co-sputtering.

Bi2Te3-In2Se3 films were prepared by co-sputtering followed by annealing, and their structural and thermoelectric properties were investigated. The immiscible nature of the two alloys results in precipitation of the second phase, thus leading to structures with self-assembled dots that are a few nanometers in scale. HAADF-STEM and HRTEM were used to confirm that In2Se3 nanodots that were a few nanometers in size did indeed form in the Bi2Te3 thin film. It was found that the incorporation of these nanodots can reduce the thermal conductivity of the thin film.

Interfacial thermal conductance observed to be higher in semiconducting than metallic carbon nanotubes.

Thermal transport at carbon nanotube (CNT) interfaces was investigated by characterizing the interfacial thermal conductance between metallic or semiconducting CNTs and three different surfactants. We thereby resolved a difference between metallic and semiconducting CNTs. CNT portions separated by their electronic type were prepared in aqueous suspensions. After slightly heating the CNTs dispersed in the suspension, we obtained cooling curves by monitoring the transient changes in absorption, and from these cooling curves, we extracted the interfacial thermal conductance by modeling the thermal system. We found that the semiconducting CNTs unexpectedly exhibited a higher conductance of 11.5 MW/m(2)·K than that of metallic CNTs (9 MW/m(2)·K). Meanwhile, the type of surfactants hardly influenced the heat transport at the interface. The surfactant dependence is understood in terms of the coupling between the low-frequency vibrational modes of the CNTs and the surfactants. Explanations for the electronic-type dependency are considered based on the defect density in CNTs and the packing density of surfactants.

SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory.

This study examined the various physical, structural and electrical properties of SiO(2) doped Ge(2)Sb(2)Te(5) (SGST) films for phase change random access memory applications. Interestingly, SGST had a layered structure (LS) resulting from the inhomogeneous distribution of SiO(2) after annealing. The physical parameters able to affect the reset current of phase change memory (I(res)) were predicted from the Joule heating and heat conservation equations. When SiO(2) was doped into GST, thermal conductivity largely decreased by ∼ 55%. The influence of SiO(2)-doping on I(res) was examined using the test phase change memory cell. I(res) was reduced by ∼ 45%. An electro-thermal simulation showed that the reduced thermal conductivity contributes to the improvement of cell efficiency as well as the reduction of I(res), while the increased dynamic resistance contributes only to the latter. The formation and presence of the LS thermal conductivity in the set state test cell after repeated switching was confirmed.

Profiling the thermoelectric power of semiconductor junctions with nanometer resolution.

We have probed the local thermoelectric power of semiconductor nanostructures with the use of ultrahigh-vacuum scanning thermoelectric microscopy. When applied to a p-n junction, this method reveals that the thermoelectric power changes its sign abruptly within 2 nanometers across the junction. Because thermoelectric power correlates with electronic structure, we can profile with nanometer spatial resolution the thermoelectric power, band structures, and carrier concentrations of semiconductor junctions that constitute the building blocks of thermoelectric, electronic, and optoelectronic devices.