Describing angular momentum conventions in circularly polarized optically pumped NMR in GaAs and CdTe.

The physical phenomena governing hyperpolarization through optical pumping of conduction electrons continue to be explored in multiple semiconductor systems. One early finding has been the asymmetry between the optically pumped nuclear magnetic resonance (OPNMR) signals when generated by different circular polarizations (i.e., light helicities). Because these resonances are asymmetric, the midpoint between the signals prepared with each of the two circular polarizations is either a positive or negative value, termed an "offset" that is representative of an optical Overhauser enhancement. Both negative offsets (in GaAs) and positive offsets (in CdTe) have been observed. The origins of these offsets in semiconductors are believed to arise from thermalized electrons; however, to the best of our knowledge, no study has systematically tested this hypothesis. To that end, we have adopted two configurations for OPNMR experiments-one in which the Poynting vector of the laser light and magnetic field are parallel, and one in which they are antiparallel, while other experimental conditions are kept the same. We find that the OPNMR signal response to a fixed helicity of light depends on the experimental configuration, and this configuration needs to be accounted for in order to properly describe the OPNMR results. Further, studying the offsets as a function of field strength shows that the optical Overhauser enhancement (the offset) increases in magnitude with field strength. Finally, by describing all angular momentum and phasing conventions unambiguously, we are able to determine that the absorptively-phased appearance of 113Cd (and 125Te) OPNMR in CdTe is a consequence of the sign of the nuclear gyromagnetic ratios for these isotopes.

A combined experimental setup for OP and ODNMR.

Instrumentation for optically-pumped and optically-detected nuclear magnetic resonance (OPNMR and ODNMR) has been developed and implemented as a single experimental apparatus to study semiconductors such as GaAs and CdTe. These two measurement schemes use many of the same components for experiments. Here we describe, in two parts, the apparatus that can record such measurements and give examples of representative data. In Part 1, the radio-frequency probe and low-temperature cryostat are described, including single-channel and two-channel static cryogenic probes that both incorporate a modified solenoid coil that permits better optical access. In Part 2, the optical bench is described in detail, which uses a set of experiments (magneto-photoluminescence, photoluminescence excitation, detection of polarized photoluminescence) as important input for ODNMR. We are able to portray a robust design that encompasses multiple measurement modalities, along with the ability to change many experimental parameters with ease.

Enhanced NMR with Optical Pumping Yields 75As Signals Selectively from a Buried GaAs Interface.

We have measured the 75As signals arising from the interface region of single-crystal semi-insulating GaAs that has been coated and passivated with an aluminum oxide film deposited by atomic layer deposition (ALD) with optically pumped NMR (OPNMR). Using wavelength-selective optical pumping, the laser restricts the volume from which OPNMR signals are collected. Here, OPNMR signals were obtained from the interface region and distinguished from signals arising from the bulk. The interface region is highlighted by interactions that disrupt the cubic symmetry of the GaAs lattice, resulting in quadrupolar satellites for nuclear [Formula: see text] isotopes, whereas NMR of the "bulk" lattice is nominally unsplit. Quadrupolar splitting at the interface arises from strain based on lattice mismatch between the GaAs and ALD-deposited aluminum oxide due to their different coefficients of thermal expansion. Such spectroscopic evidence of strain can be useful for measuring lattice distortions at heterojunction boundaries and interfaces.

Structural study by solid-state (71)Ga NMR of thin film transistor precursors.

Solid-state (71)Ga NMR was used to investigate the structures of several heterometallic Group 13 hydroxo-aquo clusters, [Ga13-xInx (µ3-OH)6(µ2-OH)18(H2O)24](NO3)15 which are envisioned for thin film transistors. The characterization of these clusters in the solid state provides additional information in understanding the synthesis, structure and speciation of these precursors for high-quality, ultrasmooth thin films. Yet important structural information regarding these clusters - including the exact composition, isomeric structure, and coordination environments - were unknown prior to this precise NMR spectroscopy study. These molecular species, termed "Ga13-xInx", contain three types of six-coordinate metal sites, with bridging OH(-) groups and H2O as capping ligands, and we report results on Ga7In6, Ga8In5, Ga10In3, Ga11In2, Ga12In1, and Ga13. Utilizing two magnetic fields (13.9 T and 21.1 T), the solid-state NMR spectra were interpreted in conjunction with computational modeling (using CASTEP) and simulation of spectral lineshapes (using Dmfit). The metal sites are best represented as distorted octahedra, and they exhibit a range of quadrupolar couplings and asymmetry parameters, which can be addressed using longitudinal strain analysis. Until now, there has been speculation about the sites for transmetallation within the synthetic cluster community. Here, we show that Ga NMR is a powerful technique to monitor the transmetallation of In for Ga in the Ga13-xInx clusters, specifically substituting in the "outer ring" sites, and not the "core" or "middle ring".