ABSTRACT
Multifunctional devices are an indispensable choice to fulfil the increasing demand for miniaturized and integrated circuit systems. However, bulk material-based devices encounter the challenge of miniaturized all-in-one systems with multiple functions. In this study, we designed a field effect transistor (FET) based on a monolayer HfS2-ZrS2 lateral heterojunction. It possesses simultaneous and obvious rectifying behavior and photodetection characteristics in the visible light region, such as the rectification ratio of â¼1012, photocurrent density of 13.3 nA m-1, responsivity of 57 mA W-1, and extinction ratio of 108. Notably, the rectification ratio of the single-gate FET is larger than that of the dual-gate FET under the negative gate voltage. These results indicate that monolayer lateral heterojunction-based FETs can provide an effective route to integrate rectifying and photodetection functions in single optoelectronic nanodevices.
ABSTRACT
In this work, copper selenide (Cu2-xSe) thin films were grown on FTO conductive glass substrates using a facile microwave-assisted hydrothermal method. The effects of synthesis parameters such as precursor components and deposition time on the stoichiometry and morphology of the synthesized films were systematically investigated through different techniques including XRD, SEM, and AFM. In order to evaluate the electrochemical catalytic performance of the synthesized copper selenide in electrolyte containing the sulfide/polysulfide redox couple, we assembled liquid-junction quantum dots-sensitized solar cells (QDSSC) using the synthesized copper selenide thin films as counter electrodes and CdSe quantum dots-sensitized mesoporous TiO2as photoanodes. Under the illumination of one Sun (100 mW cm-2), the QDSSC assembled with the optimal copper selenide CEs (Cu:Se = 1:1) exhibited a power conversion efficiency of 2.07%, which is much higher than that of traditional Pt counter electrode (0.76%).
ABSTRACT
High performance photodetectors based on van der Waals heterostructures (vdWHs) are crucial to developing micro-nano-optoelectronic devices. However, reports show that it is difficult to balance fast response and high sensitivity. In this work, we design a photovoltaic field-effect photodiode (PVFED) based on the WSe2/MoS2/WSe2 double vdWHs, where the photovoltage that originated from one vdWH modulates the optoelectronic characteristics of another vdWH. The proposed photodiode exhibits an excellent self-powered ability with a high responsivity of 715 mA·W-1 and fast response time of 45 µs. This work demonstrates an efficient method that optimizes the photoelectric performance of vdWH by introducing the photovoltaic field effect.
ABSTRACT
Metal phosphorus trichalcogenides (MPX3) have attracted extensive attention as promising two-dimensional (2D) layered materials in future electronic and optoelectronic devices. Here, for the first time, few-layer In4/3P2Se6 nanoflakes have been successfully exfoliated from home-made high-quality single crystals. The In4/3P2Se6 crystal belongs to the R3 space group, and possesses a weak van der Waals force between the adjacent layers and a direct bandgap of 1.99 eV. Furthermore, the In4/3P2Se6-based photodetectors show high performances in the visible light region, such as a high responsivity (R) of 4.93 A·W-1, a high external quantum efficiency (EQE) of 1509% and a fast response time, as low as 2.1 ms. In particular, the high detectivity (D) of the devices can reach up to 4.3 × 1013 Jones (light ON/OFF ratio ≈104) under illumination from a 405 nm light at a bias voltage of 1 V, which is favoured by the ultralow dark current (â¼100 fA). These excellent performances pave the way for the implementation of In4/3P2Se6 nanoflakes as promising candidates for future optoelectronic detection applications.
ABSTRACT
Engineering of TiO2 photoanode is an important strategy for increasing the photovoltaic conversion efficiency of quantum dots-sensitized solar cells (QDSSCs). In this work, three-dimensional ordered macroporous (3DOM) TiO2 films are fabricated by the controlled infiltrating-calcination method using the close-packed polystyrene spheres colloidal crystals as templates. The as-prepared macroporous TiO2 films are then applied as the photoanode in colloidal CdSe QDSSCs. This structure not only facilitates the penetration of thioglycolic acid capped CdSe QDs, and thus achieving a high coverage of the internal surface with QDs sensitizer, but also exhibits a photonic band gap with tunable positions, which could enhance the light absorption. As a result, the liquid-junction QDSSCs assembled with the CdSe sensitized 3DOM TiO2 yields a power conversion efficiency of 3.60% under solar illumination of 100 mW cm-2, and this value is much higher than that of the device using nanoporous TiO2 photoanode (1.82%). Our results indicate that the 3DOM TiO2 is a promising candidate for the construction of high-efficiency QDSSCs.
