Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser.

Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications.

High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.

High-power ultrafast lasers are important for numerous industrial and scientific applications. Current multi-watt systems, however, are based on relatively complex laser concepts, for example using additional intracavity elements for pulse formation. Moving towards a higher level of integration would reduce complexity, packaging, and manufacturing cost, which are important requirements for mass production. Semiconductor lasers are well established for such applications, and optically-pumped vertical external cavity surface emitting lasers (VECSELs) are most promising for higher power applications, generating the highest power in fundamental transverse mode (>20 W) to date. Ultrashort pulses have been demonstrated using passive modelocking with a semiconductor saturable absorber mirror (SESAM), achieving for example 2.1-W average power, sub-100-fs pulse duration, and 50-GHz pulse repetition rate. Previously the integration of both the gain and absorber elements into a single wafer was demonstrated with the MIXSEL (modelocked integrated external-cavity surface emitting laser) but with limited average output power (<200 mW). We have demonstrated the power scaling concept of the MIXSEL using optimized quantum dot saturable absorbers in an antiresonant structure design combined with an improved thermal management by wafer removal and mounting of the 8-µm thick MIXSEL structure directly onto a CVD-diamond heat spreader. The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser.

Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode.

We have demonstrated an optically pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) generating more than 20 W of cw output power in a fundamental transverse mode (M2 approximately 1.1) at 960 nm. The laser is highly efficient with a slope efficiency of 49%, a pump threshold of 4.4 W, and an overall optical-to-optical efficiency of 43%.

Femtosecond thin disk laser oscillator with pulse energy beyond the 10-microjoule level.

We report on a passively mode-locked Yb:YAG thin disk laser oscillator that generates 11.3-microJ pulses without the use of any additional external amplification. A repetition rate of 4 MHz is obtained using a 23.4-m-long multiple-pass cavity that extends the resonator length to a total of 37 m. The nearly transform-limited pulses at 45 W of average output power have a duration of 791 fs with a 1.56-nm-broad spectrum centered at 1030 nm. The laser is operated in a helium atmosphere to eliminate the air nonlinearity inside the resonator that previously limited the pulse energy.

Growth parameter optimization for fast quantum dot SESAMs.

Semiconductor saturable absorber mirrors (SESAMs) using quantum dot (QD) absorbers exhibit a larger design freedom than standard quantum well absorbers. The additional parameter of the dot density in combination with the field enhancement allows for an independent control of saturation fluence and modulation depth. We present the first detailed study of the effect of QD growth parameters and post growth annealing on the macroscopic optical SESAM parameters, measuring both nonlinear reflectivity and recombination dynamics. We studied a set of self-assembled InAs QD-SESAMs optimized for an operation wavelength around 960 nm with varying dot density and growth temperature. We confirm that the modulation depth is controlled by the dot density. We present design guidelines for QD-SESAMs with low saturation fluence and fast recovery, which are for example important for modelocking of vertical external cavity surface emitting lasers (VECSELs).

Efficient femtosecond high power Yb:Lu(2)O(3) thin disk laser.

We demonstrate the first passively mode-locked thin disk laser based on Yb:Lu(2)O(3). The laser generates 370-fs pulses with 20.5 W of average power in a diffraction-limited beam (M(2) < 1.1). The nearly transform-limited pulses have a spectral bandwidth of 3.4 nm centered near 1034 nm. With slightly longer pulses (523 fs) we obtained 24 W of average power at a pump power of 56 W, resulting in an optical-to-optical efficiency of 43%, which is higher than for any previously mode-locked thin disk laser.