Waveguide-integrated silicon T centres.

The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spin qubits, and proven native integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we demonstrate further levels of integration by characterizing T centre spin ensembles in single-mode waveguides in SOI. In addition to measuring long spin T1 times, we report on the integrated centres' optical properties. We find that the narrow homogeneous linewidth of these waveguide-integrated emitters is already sufficiently low to predict the future success of remote spin-entangling protocols with only modest cavity Purcell enhancements. We show that further improvements may still be possible by measuring nearly lifetime-limited homogeneous linewidths in isotopically pure bulk crystals. In each case the measured linewidths are more than an order of magnitude lower than previously reported and further support the view that high-performance, large-scale distributed quantum technologies based upon T centres in silicon may be attainable in the near term.

Coherent Control and Spectroscopy of a Semiconductor Quantum Dot Wigner Molecule.

Semiconductor quantum dots containing more than one electron have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different transitions in a silicon-based quantum dot. We use qubit readout to perform spectroscopy, revealing a dense set of energy levels with characteristic spacing far smaller than the single-particle energy. By comparing with full configuration interaction calculations, we argue that the dense set of levels arises from Wigner-molecule physics.

Ray-based framework for state identification in quantum dot devices.

Quantum dots (QDs) defined with electrostatic gates are a leading platform for a scalable quantum computing implementation. However, with increasing numbers of qubits, the complexity of the control parameter space also grows. Traditional measurement techniques, relying on complete or near-complete exploration via two-parameter scans (images) of the device response, quickly become impractical with increasing numbers of gates. Here we propose to circumvent this challenge by introducing a measurement technique relying on one-dimensional projections of the device response in the multidimensional parameter space. Dubbed the "ray-based classification (RBC) framework," we use this machine learning approach to implement a classifier for QD states, enabling automated recognition of qubit-relevant parameter regimes. We show that RBC surpasses the 82% accuracy benchmark from the experimental implementation of image-based classification techniques from prior work, while reducing the number of measurement points needed by up to 70%. The reduction in measurement cost is a significant gain for time-intensive QD measurements and is a step forward toward the scalability of these devices. We also discuss how the RBC-based optimizer, which tunes the device to a multiqubit regime, performs when tuning in the two-dimensional and three-dimensional parameter spaces defined by plunger and barrier gates that control the QDs. This work provides experimental validation of both efficient state identification and optimization with machine learning techniques for non-traditional measurements in quantum systems with high-dimensional parameter spaces and time-intensive measurements.

Autotuning of double dot devices in situ with machine learning.

The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time-consuming procedure that is inherently impractical for scaling up and applications. In this work, we report on the in situ implementation of a recently proposed autotuning protocol that combines machine learning (ML) with an optimization routine to navigate the parameter space. In particular, we show that a ML algorithm trained using exclusively simulated data to quantitatively classify the state of a double-QD device can be used to replace human heuristics in the tuning of gate voltages in real devices. We demonstrate active feedback of a functional double-dot device operated at millikelvin temperatures and discuss success rates as a function of the initial conditions and the device performance. Modifications to the training network, fitness function, and optimizer are discussed as a path toward further improvement in the success rate when starting both near and far detuned from the target double-dot range.

Fabrication process and failure analysis for robust quantum dots in silicon.

We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetting of aluminum and formation of undesired alloys in device interconnects. Additionally, cross-sectional scanning transmission electron microscopy (STEM) images elucidate gate electrode morphology in the active region as device geometry is varied. We show that overlapping aluminum gate layers homogeneously conform to the topology beneath them, independent of gate geometry and identify critical dimensions in the gate geometry where pattern transfer becomes non-ideal, causing device failure.

Orbital State Manipulation of a Diamond Nitrogen-Vacancy Center Using a Mechanical Resonator.

We study the resonant optical transitions of a single nitrogen-vacancy (NV) center that is coherently dressed by a strong mechanical drive. Using a gigahertz-frequency diamond mechanical resonator that is strain coupled to a NV center's orbital states, we demonstrate coherent Raman sidebands out to the ninth order and orbital-phonon interactions that mix the two excited-state orbital branches. These interactions are spectroscopically revealed through a multiphonon Rabi splitting of the orbital branches which scales as a function of resonator driving amplitude and is successfully reproduced in a quantum model. Finally, we discuss the application of mechanical driving to engineering NV-center orbital states.

Cooling a mechanical resonator with nitrogen-vacancy centres using a room temperature excited state spin-strain interaction.

Cooling a mechanical resonator mode to a sub-thermal state has been a long-standing challenge in physics. This pursuit has recently found traction in the field of optomechanics in which a mechanical mode is coupled to an optical cavity. An alternate method is to couple the resonator to a well-controlled two-level system. Here we propose a protocol to dissipatively cool a room temperature mechanical resonator using a nitrogen-vacancy centre ensemble. The spin ensemble is coupled to the resonator through its orbitally-averaged excited state, which has a spin-strain interaction that has not been previously studied. We experimentally demonstrate that the spin-strain coupling in the excited state is 13.5±0.5 times stronger than the ground state spin-strain coupling. We then theoretically show that this interaction, combined with a high-density spin ensemble, enables the cooling of a mechanical resonator from room temperature to a fraction of its thermal phonon occupancy.

Erratum: Cooling a mechanical resonator with nitrogen-vacancy centres using a room temperature excited state spin-strain interaction.

[This corrects the article DOI: 10.1038/ncomms14358.].

Mechanical spin control of nitrogen-vacancy centers in diamond.

We demonstrate direct coupling between phonons and diamond nitrogen-vacancy (NV) center spins by driving spin transitions with mechanically generated harmonic strain at room temperature. The amplitude of the mechanically driven spin signal varies with the spatial periodicity of the stress standing wave within the diamond substrate, verifying that we drive NV center spins mechanically. These spin-phonon interactions could offer a route to quantum spin control of magnetically forbidden transitions, which would enhance NV-based quantum metrology, grant access to direct transitions between all of the spin-1 quantum states of the NV center, and provide a platform to study spin-phonon interactions at the level of a few interacting spins.