ABSTRACT
A complete two-dimensional imaging system based on a silicon monolithic array of 60 single-photon counters is presented. The fabricated solid-state array is rugged and operates at low voltages. Detection efficiency is higher than 40% in the visible range, and cross talk among 50 microm pixels is lower than 10(-4). The complete system provides a maximum throughput of 20 kframes/s with truly parallel readout and nanosecond gating, thanks to the use of an integrated active quenching circuit for each pixel of the array. We report optical and electrical characterizations of the whole imaging system.
Subject(s)
Algorithms , Image Enhancement/instrumentation , Image Interpretation, Computer-Assisted/instrumentation , Photons , Radiometry/instrumentation , Signal Processing, Computer-Assisted/instrumentation , Video Recording/instrumentation , Equipment Design , Equipment Failure Analysis , Image Enhancement/methods , Image Interpretation, Computer-Assisted/methods , Information Storage and Retrieval/methods , Radiation Dosage , Radiometry/methods , Reproducibility of Results , Sensitivity and Specificity , Video Recording/methodsABSTRACT
In this work, the results of a structural investigation by transmission electron microscopy of porous silicon and porous silicon-based devices is reported. This investigation covers a wide range of porous silicon materials going from photoluminescent micro- or meso-porous silicon to macro-porous layers as well as some recent applications of this material for the fabrication of porous silicon and Si/SiO2 superlattices, suspended thick membranes and gas sensor devices. It appears that the structural investigation technique here employed, is a fundamental tool for the optimisation of the technological processing of this material. From the results reported in this work, a quite comprehensive view of the potentialities and limitations of the applications of porous silicon in the field of optical and gas sensor devices should also emerge. Finally, some solutions to the problems usually met during the technological processing of this material are proposed.