Integrated microwave photonic notch filter using a heterogeneously integrated Brillouin and active-silicon photonic circuit.

Microwave photonics (MWP) has unlocked a new paradigm for Radio Frequency (RF) signal processing by harnessing the inherent broadband and tunable nature of photonic components. Despite numerous efforts made to implement integrated MWP filters, a key RF processing functionality, it remains a long-standing challenge to achieve a fully integrated photonic circuit that can merge the megahertz-level spectral resolution required for RF applications with key electro-optic components. Here, we overcome this challenge by introducing a compact 5 mm × 5 mm chip-scale MWP filter with active E-O components, demonstrating 37 MHz spectral resolution. We achieved this device by heterogeneously integrating chalcogenide waveguides, which provide Brillouin gain, in a complementary metal-oxide-semiconductor (CMOS) foundry-manufactured silicon photonic chip containing integrated modulators and photodetectors. This work paves the way towards a new generation of compact, high-resolution RF photonic filters with wideband frequency tunability demanded by future applications, such as air and spaceborne RF communication payloads.

Chip-based SBS for image rejection in a broadband microwave photonic mixer.

Microwave photonics offers a promising solution for frequency converting microwave signals, however, demonstrations so far have either been bulky fibre implementations or lacked rejection of interfering image signals. Here, we demonstrate the first microwave photonic mixer with image rejection of broadband signals utilising chip-based stimulated Brillouin scattering and interferometry. We demonstrate frequency down-conversion of carrier frequencies ranging from 10 GHz-16 GHz, ultra-high image rejection for a single tone of up to 70 dB, and 100 MHz and 400 MHz wide analogue signals with 28.5 dB and 16 dB image rejection, respectively. Furthermore, we down-convert 200 Mb/s quadrature-phase-shift keying signals with an error vector magnitude as low as -9.6 dB when simultaneously present interfering image signals are suppressed by the mixer.

Polarization response of planarized optical waveguides to determine the anisotropic complex refractive index of graphene oxide thin films.

The polarization response of graphene oxide (GO)-coated planarized optical waveguides is used to determine the complex refractive index of GO film. GO films with thicknesses between 0.10 and 0.71 µm were coated on planarized optical waveguides. GO-coated waveguides exhibit large polarization dependent losses-and the polarization response depends strongly on the GO coating thickness. The response was used, together with finite element analysis, to determine the complex refractive index of the GO film. The complex refractive indices of GO films for both TE- and TM-polarized light at a wavelength of 1550 nm were found to be 1.71+0.09i and 1.58+0.05i, respectively. The uncertainties of nGO and kGO for TE-polarized light are ±0.02 and ±0.03, respectively, whereas the uncertainties of nGO and kGO for TM-polarized light are ±0.05 and ±0.02, respectively.

Integrated microwave photonic true-time delay with interferometric delay enhancement based on Brillouin scattering and microring resonators.

True-time delays are important building blocks in modern radio frequency systems that can be implemented using integrated microwave photonics, enabling higher carrier frequencies, improved bandwidths, and a reduction in size, weight, and power. Stimulated Brillouin scattering (SBS) offers optically-induced continuously tunable delays and is thus ideal for applications that require programmable reconfiguration but previous approaches have been limited by large SBS gain requirements. Here, we overcome this limitation by using radio-frequency interferometry to enhance the Brillouin-induced delay applied to the optical sidebands that carry RF signals, while controlling the phase of the optical carrier with integrated silicon nitride microring resonators. We report a delay tunability over 600 ps exploiting an enhancement factor of 30, over a bandwidth of 1 GHz using less than 1 dB of Brillouin gain utilizing a photonic chip architecture based on Brillouin scattering and microring resonators.

High-conversion-gain and deep-image-rejection Brillouin chip-based photonic RF mixer.

In this Letter, we report a chip-based photonic radio-frequency (RF) mixer with a maximum conversion gain of -9dB and image rejection ratio of 50 dB for 3.2 GHz to 13.2 GHz RF frequency range. This is achieved by the combined use of optical carrier suppression modulation and on-chip stimulated Brillouin scattering. These results will stimulate future implementations of integrated photonic RF mixers in complicated electromagnetic environments.

Low-RF-loss and large-rejection reconfigurable Brillouin-based RF photonic bandpass filter.

We present a high-performance radio frequency (RF) photonic bandpass filter enabled by combining on-chip Brillouin scattering with a suppressed carrier phase modulation scheme. We achieve a low RF loss of 5 dB and a large stopband rejection of more than 40 dB, which represents a significant improvement of 20 dB to the RF passband gain and 31 dB to the RF rejection ratio over traditional modulation schemes under the same optical power consumption. We further demonstrate filter reconfigurability including multiple passbands, wide frequency (1-20 GHz), and bandwidth tunability (30-350 MHz) without compromising the RF performance.

On-chip multi-stage optical delay based on cascaded Brillouin light storage.

Storing and delaying optical signals plays a crucial role in data centers, phased array antennas, communication, and future computing architectures. Here, we show a delay scheme based on cascaded Brillouin light storage that achieves multi-stage delay at arbitrary positions within a photonic integrated circuit. Importantly these multiple resonant transfers between the optical and acoustic domain are controlled solely via external optical control pulses, allowing cascading of the delay without the need of aligning multiple structural resonances along the optical circuit.

Author Correction: A chip-integrated coherent photonic-phononic memory.

The original version of this Article omitted the Acknowledgements section:"This work was sponsored by the Australian Research Council (ARC) Laureate Fellowship (FL120100029) and the Centre of Excellence program (CUDOS CE110001010). We acknowledge the support of the ANFF ACT."This has now been corrected in both the PDF and HTML versions of the Article.

A chip-integrated coherent photonic-phononic memory.

Controlling and manipulating quanta of coherent acoustic vibrations-phonons-in integrated circuits has recently drawn a lot of attention, since phonons can function as unique links between radiofrequency and optical signals, allow access to quantum regimes and offer advanced signal processing capabilities. Recent approaches based on optomechanical resonators have achieved impressive quality factors allowing for storage of optical signals. However, so far these techniques have been limited in bandwidth and are incompatible with multi-wavelength operation. In this work, we experimentally demonstrate a coherent buffer in an integrated planar optical waveguide by transferring the optical information coherently to an acoustic hypersound wave. Optical information is extracted using the reverse process. These hypersound phonons have similar wavelengths as the optical photons but travel at five orders of magnitude lower velocity. We demonstrate the storage of phase and amplitude of optical information with gigahertz bandwidth and show operation at separate wavelengths with negligible cross-talk.Optical storage implementations based on optomechanical resonator are limited to one wavelength. Here, exploiting stimulated Brillouin scattering, the authors demonstrate a coherent optical memory based on a planar integrated waveguide, which can operate at different wavelengths without cross-talk.

Widely tunable, low phase noise microwave source based on a photonic chip.

Spectrally pure microwave sources are highly desired for several applications, ranging from wireless communication to next generation radar technology and metrology. Additionally, to generate very pure signals at even higher frequencies, these advanced microwave sources have to be compact, low in weight, and low energy consumption to comply with in-field applications. A hybrid optical and electronic cavity, known as an optoelectronic oscillator (OEO), has the potential to leverage the high bandwidth of optics to generate ultrapure high-frequency microwave signals. Here we present a widely tunable, low phase noise microwave source based on a photonic chip. Using on-chip stimulated Brillouin scattering as a narrowband active filter allows single-mode OEO operation and ultrawide frequency tunability with no signal degeneration. Furthermore, we show very low close-to-carrier phase noise. This Letter paves the way to a compact, fully integrated pure microwave source.

Enhancing and inhibiting stimulated Brillouin scattering in photonic integrated circuits.

On-chip nonlinear optics is a thriving research field, which creates transformative opportunities for manipulating classical or quantum signals in small-footprint integrated devices. Since the length scales are short, nonlinear interactions need to be enhanced by exploiting materials with large nonlinearity in combination with high-Q resonators or slow-light structures. This, however, often results in simultaneous enhancement of competing nonlinear processes, which limit the efficiency and can cause signal distortion. Here, we exploit the frequency dependence of the optical density-of-states near the edge of a photonic bandgap to selectively enhance or inhibit nonlinear interactions on a chip. We demonstrate this concept for one of the strongest nonlinear effects, stimulated Brillouin scattering using a narrow-band one-dimensional photonic bandgap structure: a Bragg grating. The stimulated Brillouin scattering enhancement enables the generation of a 15-line Brillouin frequency comb. In the inhibition case, we achieve stimulated Brillouin scattering free operation at a power level twice the threshold.

Narrow linewidth Brillouin laser based on chalcogenide photonic chip.

We present, to the best of our knowledge, the first demonstration of a narrow linewidth, waveguide-based Brillouin laser that is enabled by large Brillouin gain of a chalcogenide chip. The waveguides are equipped with vertical tapers for low-loss coupling. Due to optical feedback for the Stokes wave, the lasing threshold is reduced to 360 mW, which is five times lower than the calculated single-pass Brillouin threshold for the same waveguide. The slope efficiency of the laser is found to be 30%, and the linewidth of 100 kHz is measured using a self-heterodyne method.

On-chip high sensitivity laser frequency sensing with Brillouin mutually-modulated cross-gain modulation.

We report the first demonstration of a photonic-chip laser frequency sensor using Brillouin mutually-modulated cross-gain modulation (MMXGM). A large sensitivity (~9.5 mrad/kHz) of the modulation phase shift to probe carrier frequency is demonstrated at a modulation frequency of 50 kHz using Brillouin MMXGM in a ~7 cm long chalcogenide rib waveguide.

On-chip stimulated Brillouin scattering.

We demonstrate on-chip stimulated Brillouin scattering (SBS) in an As2S3 chalcogenide rib waveguide. SBS was characterized in a cm long waveguide with a cross-section 4 µm x 850 nm using the backscattered signal and pump-probe technique. The measured Brillouin shift and its full-width at half-maximum (FWHM) linewidth were ~7.7 GHz and 34 MHz, respectively. Probe vs. pump power measurements at the Brillouin shift were used to obtain the gain coefficient from an exponential fit. The Brillouin gain coefficient obtained was 0.715 x 10(-9) m/W. A probe gain of 16 dB was obtained for a CW pump power of ~300 mW.

Photonic chip-based all-optical XOR gate for 40 and 160 Gbit/s DPSK signals.

We demonstrate a photonic chip-based all-optical exclusive-OR (XOR) gate for phase-encoded optical signals via four-wave mixing in a highly nonlinear, dispersion-engineered chalcogenide (As2S3) planar waveguide. We achieve error-free, XOR operation for 40 Gbit/s differential phase shift keying (DPSK) optical signals with no power penalty. The effectiveness and broad bandwidth operation of our approach is highlighted by implementing an XOR gate for 160 Gbit/s DPSK signals.