ABSTRACT
The utilization of polarized neutrons is of great importance in scientific disciplines spanning materials science, physics, biology, and chemistry. However, state-of-the-art multilayer polarizing neutron optics have limitations, particularly low specular reflectivity and polarization at higher scattering vectors/angles, and the requirement of high external magnetic fields to saturate the polarizer magnetization. Here, we show that, by incorporating 11B4C into Fe/Si multilayers, amorphization and smooth interfaces can be achieved, yielding higher neutron reflectivity, less diffuse scattering, and higher polarization. Magnetic coercivity is eliminated, and magnetic saturation can be reached at low external fields (>2 militesla). This approach offers prospects for substantial improvement in polarizing neutron optics with nonintrusive positioning of the polarizer, enhanced flux, increased data accuracy, and further polarizing/analyzing methods at neutron scattering facilities.
ABSTRACT
We present a study of [Formula: see text] thin films grown on c-plane [Formula: see text] substrates by reactive dc-magnetron sputtering. Our results reveal three distinct types of films displaying different metal-insulator transitions dependent on the growth conditions. We observe a clear temperature window, spanning 200 [Formula: see text]C, where highly epitaxial films of [Formula: see text] can be obtained wherein the transition can be tuned by controlling the amount of interstitial oxygen in the films through the deposition conditions. Although small structural variations are observed within this window, large differences are observed in the electrical properties of the films with strong differences in the magnitude and temperature of the metal-insulator transition which we attribute to small changes in the stoichiometry and local strain in the films. Altering the sputtering power we are able to tune the characteristics of the metal-insulator transition suppressing and shifting the transition to lower temperatures as the power is reduced. Combined results for all the films fabricated for the study show a preferential increase in the a lattice parameter and reduction in the c lattice parameter with reduced deposition temperature with the film deviating from a constant volume unit cell to a higher volume.
ABSTRACT
The strength of the interlayer exchange coupling in [Fe/MgO][Formula: see text](001) superlattices with 2 ≤ N ≤ 10 depends on the number of bilayer repeats (N). The exchange coupling is antiferromagnetic for all the investigated thicknesses while being nine times larger in a sample with N = 4 as compared to N = 2. The sequence of the magnetic switching in two of the samples (N = 4, N = 8) is determined using polarized neutron reflectometry. The outermost layers are shown to respond at the lowest fields, consistent with having the weakest interlayer exchange coupling. The results are consistent with the existence of quantum well states defined by the thickness of the Fe and the MgO layers as well as the number of repeats (N) in [Fe/MgO][Formula: see text](001)superlattices.
ABSTRACT
In 2013, a new class of inherently nanolaminated magnetic materials, the so called magnetic MAX phases, was discovered. Following predictive material stability calculations, the hexagonal Mn2GaC compound was synthesized as hetero-epitaxial films containing Mn as the exclusive M-element. Recent theoretical and experimental studies suggested a high magnetic ordering temperature and non-collinear antiferromagnetic (AFM) spin states as a result of competitive ferromagnetic and antiferromagnetic exchange interactions. In order to assess the potential for practical applications of Mn2GaC, we have studied the temperature-dependent magnetization, and the magnetoresistive, magnetostrictive as well as magnetocaloric properties of the compound. The material exhibits two magnetic phase transitions. The Néel temperature is T N ~ 507 K, at which the system changes from a collinear AFM state to the paramagnetic state. At T t = 214 K the material undergoes a first order magnetic phase transition from AFM at higher temperature to a non-collinear AFM spin structure. Both states show large uniaxial c-axis magnetostriction of 450 ppm. Remarkably, the magnetostriction changes sign, being compressive (negative) above T t and tensile (positive) below the T t . The sign change of the magnetostriction is accompanied by a sign change in the magnetoresistance indicating a coupling among the spin, lattice and electrical transport properties.
ABSTRACT
The thickness dependence of magnetic properties has been studied in SmCo5 amorphous films with imprinted in-plane anisotropy for thicknesses ranging down to the nanometer scale (2.5-100 nm). The field induced in-plane magnetic anisotropy decreases considerably when the film thickness is below 20 nm. Analysis of the magnetic anisotropy energy shows that the decrease of the induced in-plane anisotropy is accompanied by the development of an out-of-plane interface anisotropy. Two different regimes for the coercivity (Hc) change are found: below 3.75 nm, the Hc decreases continuously with decrease of the film thickness, whereas at above 3.75 nm, the Hc decreases with increase of the film thickness. This change in Hc can be understood by considering the decrease of the short range chemical order for the thinnest films (<3.75 nm) and the relative decrease of the interface contribution with increasing film thickness. The changes in anisotropy have a profound influence on the domain structure, in which the angle of the zigzag domain boundaries decreases with the inverse thickness of the layers.
