ABSTRACT
The results from this study demonstrate the potential of an AlGaN/GaN high electron mobility transistor sensor for the detection of reactive and transient biological molecules such as hydrogen peroxide. A boronate-based fluorescent probe was used with this device to detect the presence of micromolar levels of hydrogen peroxide typically associated with intracellular processes. The real-time electrical response of the high electron mobility transistor sensor showed a gradual decrease in the two-dimensional electron gas current as the reaction proceeded over time. A corresponding increase in the emission intensity was measured from the fluorescent probe with the progression of the reaction. The fluorescence from the boronate probe was used as an indicator to confirm the detection of hydrogen peroxide. These results demonstrate the dynamic measurement capability of AlGaN/GaN high electron mobility transistor sensors in monitoring real-time reactions of reactive oxygen species such as hydrogen peroxide.
Subject(s)
Aluminum Compounds/chemistry , Biosensing Techniques , Boronic Acids/chemistry , Electrons , Gallium/chemistry , Hydrogen Peroxide/analysis , Molecular Probes/chemistry , Transistors, Electronic , Electricity , Optical Imaging , Spectrometry, FluorescenceABSTRACT
We report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template layers. Total magnesium concentration in planar regions surrounding a hillock structure is comparable to that within hillock sidewall facets measured at 1.3 × 1019 cm-3 by atom probe tomography, and clustering of Mg atoms is seen in all regions of the film. Within individual hillock structures a decreased Mg cluster density is observed within hillock structures as opposed to the planar regions surrounding a hillock. Additionally, the Mg cluster radius is decreased within the hillock sidewall. The favorable incorporation of Mg is attributed to Mg dopants incorporating substitutionally for Ga during growth of semi-polar facets of the hillock structures. Enhanced p-type conductivity of GaN:Mg films grown on high hillock density template layers is verified by optical and electrical measurement.
