Materials, Processes, and Facile Manufacturing for Bioresorbable Electronics: A Review.

Bioresorbable electronics refer to a new class of advanced electronics that can completely dissolve or disintegrate with environmentally and biologically benign byproducts in water and biofluids. They have provided a solution to the growing electronic waste problem with applications in temporary usage of electronics such as implantable devices and environmental sensors. Bioresorbable materials such as biodegradable polymers, dissolvable conductors, semiconductors, and dielectrics are extensively studied, enabling massive progress of bioresorbable electronic devices. Processing and patterning of these materials are predominantly relying on vacuum-based fabrication methods so far. However, for the purpose of commercialization, nonvacuum, low-cost, and facile manufacturing/printing approaches are the need of the hour. Bioresorbable electronic materials are generally more chemically reactive than conventional electronic materials, which require particular attention in developing the low-cost manufacturing processes in ambient environment. This review focuses on material reactivity, ink availability, printability, and process compatibility for facile manufacturing of bioresorbable electronics.

Low-Cost Manufacturing of Bioresorbable Conductors by Evaporation-Condensation-Mediated Laser Printing and Sintering of Zn Nanoparticles.

Currently, bioresorbable electronic devices are predominantly fabricated by complex and expensive vacuum-based integrated circuit (IC) processes. Here, a low-cost manufacturing approach for bioresorbable conductors on bioresorbable polymer substrates by evaporation-condensation-mediated laser printing and sintering of Zn nanoparticle is reported. Laser sintering of Zn nanoparticles has been technically difficult due to the surface oxide on nanoparticles. To circumvent the surface oxide, a novel approach is discovered to print and sinter Zn nanoparticle facilitated by evaporation-condensation in confined domains. The printing process can be performed on low-temperature substrates in ambient environment allowing easy integration on a roll-to-roll platform for economical manufacturing of bioresorbable electronics. The fabricated Zn conductors show excellent electrical conductivity (≈1.124 × 106 S m-1 ), mechanical durability, and water dissolvability. Successful demonstration of strain gauges confirms the potential application in various environmentally friendly sensors and circuits.

Mechanically Milled Irregular Zinc Nanoparticles for Printable Bioresorbable Electronics.

Bioresorbable electronics is predominantly realized by complex and time-consuming anhydrous fabrication processes. New technology explores printable methods using inks containing micro- or nano-bioresorbable particles (e.g., Zn and Mg). However, these particles have seldom been obtained in the context of bioresorbable electronics using cheap, reliable, and effective approaches with limited study on properties essential to printable electronics. Here, irregular nanocrystalline Zn with controllable sizes and optimized electrical performance is obtained through ball milling approach using polyvinylpyrrolidone (PVP) as a process control agent to stabilize Zn particles and prevent cold welding. Time and PVP dependence of the ball milled particles are studied with systematic characterizations of morphology and composition of the nanoparticles. The results reveal crystallized Zn nanoparticles with a size of ≈34.834 ± 1.76 nm and low surface oxidation. The resulting Zn nanoparticles can be readily printed onto bioresorbable substrates and sintered at room temperature using a photonic sintering approach, leading to a high conductivity of 44 643 S m-1 for printable zinc nanoparticles. The techniques to obtain Zn nanoparticles through ball milling and processing them through photonic sintering may potentially lead to a mass fabrication method for bioresorbable electronics and promote its applications in healthcare, environmental protection, and consumer electronics.

Barrier Modification of Metal-contact on Silicon by Sub-2 nm Platinum Nanoparticles and Thin Dielectrics.

We report metal/p-Si contact barrier modification through the introduction of either "isolated" or "nonisolated" tilted-target-sputtered sub-2 nm platinum nanoparticles (Pt NPs) in combination with either a 0.98 nm Atomic Layer Deposited Al2O3 or a 1.6 nm chemically grown SiO2 dielectric layer, or both. Here, we study the role of these Pt NP's size dependent properties, i.e., the Pt NP-metal surface dipole, the Coulomb blockade and quantum confinement effect in determining the degree of Fermi level depinning observed at the studied metal/p-Si interfaces. By varying only the embedded Pt NP size and its areal density, the nature of the contact can also be modulated to be either Schottky or Ohmic upon utilizing the same gate metal. 0.74 nm Pt NPs with an areal density of 1.1 × 10(13) cm(-2) show ~382 times higher current densities compared to the control sample embedded with similarly sized Pt NPs with ~1.6 times lower areal densities. We further demonstrate that both Schottky (Ti/p-Si) and poor Ohmic (Au/p-Si) contact can be modulated into a good Ohmic contact with current density of 18.7 ± 0.6 A/cm(2) and 10.4 ± 0.4 A/cm(2), respectively, showing ~18 and ~30 times improvement. A perfect forward/reverse current ratio of 1.041 is achieved for these low doped p-Si samples.