Colossal Magnetoresistance in a Mott Insulator via Magnetic Field-Driven Insulator-Metal Transition.

We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca_{3}Ru_{2}O_{7}. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattice-charge coupling. This study further provides a model approach to search for CMR systems other than manganites, such as Mott insulators in the vicinity of the boundary between competing phases.

Tuning the magnetic exchange via a control of orbital hybridization in Cr(2)(Te(1-x)W(x))O(6).

We report the complex magnetic phase diagram and electronic structure of Cr_{2}(Te_{1-x}W_{x})O_{6} systems. While compounds with different x values possess the same crystal structure, they display different magnetic structures below and above x_{c}=0.7, where both the transition temperature T_{N} and sublattice magnetization (M_{s}) reach a minimum. Unlike many known cases where magnetic interactions are controlled either by injection of charge carriers or by structural distortion induced via chemical doping, in the present case it is achieved by tuning the orbital hybridization between Cr 3d and O 2p orbitals through W 5d states. The result is supported by ab initio electronic structure calculations. Through this concept, we introduce a new approach to tune magnetic and electronic properties via chemical doping.

Electronic structure of Zr-Ni-Sn systems: role of clustering and nanostructures in half-Heusler and Heusler limits.

Half-Heusler and Heusler compounds have been of great interest for several decades for thermoelectric, magnetic, half-metallic and many other interesting properties. Among these systems, Zr-Ni-Sn compounds are interesting thermoelectrics which can go from semiconducting half-Heusler (HH) limit, ZrNiSn, to metallic Heusler (FH) limit, ZrNi2Sn. Recently Makongo et al (2011 J. Am. Chem. Soc. 133 18843) found that dramatic improvement in the thermoelectric power factor of HH can be achieved by putting excess Ni into the system. This was attributed to an energy filtering mechanism due to the presence of FH nanostructures in the HH matrix. Using density functional theory we have investigated clustering and nanostructure formation in ZrNi1+xSn (0 â©½ x â©½ 1) systems near the HH (x = 0) and FH (x = 1) ends and have found that excess Ni atoms in HH tend to stay close to each other and form nanoclusters. On the other hand, there is competing interaction between Ni-vacancies occupying different sites in FH which prevents them from forming vacancy nanoclusters. Effects of nano-inclusions on the electronic structure near HH and FH ends are discussed.

Physics of bandgap formation in Cu-Sb-Se based novel thermoelectrics: the role of Sb valency and Cu d levels.

In this paper we discuss the results of ab initio electronic structure calculations for Cu(3)SbSe(4) (Se4) and Cu(3)SbSe(3) (Se3), two narrow bandgap semiconductors of thermoelectric interest. We find that Sb is trivalent in both the compounds, in contrast to a simple nominal valence (ionic) picture which suggests that Sb should be 5 + in Se4. The gap formation in Se4 is quite subtle, with hybridization between Sb 5s and the neighboring Se 4s, 4p orbitals, position of Cu d states, and non-local exchange interaction, each playing significant roles. Thermopower calculations show that Se4 is a better p-type system. Our theoretical results for Se4 agree very well with recent experimental results obtained by Skoug et al (2011 Sci. Adv. Mater. 3 602).

Frustrated classical Heisenberg and XY models in two dimensions with nearest-neighbor biquadratic exchange: exact solution for the ground-state phase diagram.

The ground-state phase diagram is determined exactly for the frustrated classical Heisenberg model plus nearest-neighbor biquadratic exchange interactions on a two-dimensional lattice. A square- and a rhombic-symmetry version are considered. There appear ferromagnetic, incommensurate-spiral, "up-up-down-down" (UUDD), and canted ferromagnetic states, a nonspiral coplanar state that is an ordered vortex lattice, plus a noncoplanar ordered state (a "conical vortex lattice"). In the rhombic case, which adds biquadratic terms to the Heisenberg model used widely for insulating manganites, the UUDD state found is the E-type state observed; this, along with accounting essentially for the variety of ground states observed in these materials, shows that this model probably contains the long-sought mechanism behind the UUDD state.

Ground state of interacting quantum magnetic dipoles: transition from a ferromagnetic Fermi liquid to an antiferromagnetic solid.

We show that the ground state of a system of magnetic dipoles, with no electric charge, is a ferromagnetic quantum Fermi liquid at high densities, driven by the dipolar exchange energy. As in the system of classical point dipoles, the direct dipole energy is zero in this case. With decreasing density, there is a transition to an antiferromagnetic lattice state. An addition of short range hard core repulsive potential will arrest the infinite density collapse of the ferromagnetic state, and possible melting of the low density antiferromagnetic lattice state.

R3Au(6+x)Al26T (R = Ca, Sr, Eu, Yb; T = early transition metal): a large family of compounds with a stuffed BaHg11 structure type grown from aluminum flux.

A collection of new quaternary intermetallic compounds with a cubic, stuffed BaHg(11) structure type has been synthesized by the combination of a divalent rare earth or alkaline earth metal R, an early transition metal T, and gold in an excess of molten aluminum. Structural characterization of these R(3)Au(6+x)Al(26)T compounds by powder and single crystal X-ray diffraction indicates that the unit cell varies with the radii of the early transition metal T and the rare earth/alkaline earth R as expected. The element T (where T = group 4, 5, 6, and 7 element) appears to be responsible for the stabilization of up to 43 different members of the R(3)Au(6+x)Al(26)T family of compounds. Varying amounts of disorder and trends in partial occupancies of the Au stuffed site--the site that is vacant in the parent compound BaHg(11)--are also indicated by the diffraction studies of this family of compounds. Magnetic susceptibility data reveals that the transition metal atoms in these materials do not possess local magnetic moments. For the magnetic rare earth containing materials, the europium compounds undergo a ferromagnetic transition at 10 K, and the ytterbium analogues show mixed valent behavior. Band structure calculations also support a mixed valent state for Yb in these compounds.

Theoretical studies of defect states in GaTe.

Using first principle electronic structure calculations within density functional theory and the supercell model, we have investigated the nature and formation energies of defect states associated with Ga and Te vacancies and Ge and Sn substitutional impurities in GaTe. We have also calculated the band structure of pure GaTe for comparison with systems with defects and also to find out the importance of spin-orbit interaction (SOI) on its band structure. We find that the top valence band at the Γ-point shifts up in energy by ∼0.1 eV due to the mixing of Te p(x)-p(y) and p(z) bands, this splitting being considerably smaller than in atoms where it is ∼0.8 eV. From an analysis of charge densities and band structures associated with the defect states, we find that most of them are strongly localized and lie deep in the band gap region. The calculated binding energy of the deep defect state and the ε(-1/-2) transition level associated with the Ga vacancy appears to be in good agreement with experiment. Formation energy calculations suggest that V(Ga) is the preferred intrinsic defect in GaTe.

Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides.

Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.

REAu2In4 (RE = La, Ce, Pr, Nd): polyindides from liquid indium.

The series of compounds REAu2In4 (RE = La, Ce, Pr, Nd) crystallize from excess In as rod-shaped single crystals. All members adopt the orthorhombic space group Pnma with a = 18.506(2) A, b = 4.6865(6) A, and c = 7.3414(9) A for LaAu2In4, a = 18.514(3) A, b = 4.6624(8) A, and c = 7.389(1) A for CeAu2In4, a = 18.420(4) A, b = 4.6202(9) A, and c = 7.376(2) A for the Pr analogue, and a = 18.406(2) A, b = 4.6114(5) A, and c = 7.4073(7) A for NdAu2In4. The REAu2In4 series can be regarded as polar intermetallic phases composed of a complex [Au2In4]3- polyanion network in which the rare-earth ions are embedded. The [Au2In4]3- network features In tetramer units, which defines the compounds as polyindides. Magnetic measurements found no magnetic ordering down to 2 K for any of the compounds. In addition, LaAu2In4 was found to be Pauli paramagnetic with a small susceptibility. Ab initio density functional methods were used to carry out electronic structure calculations to explore the bonding, the role of gold, and the contributions of different atoms to the density of states near the Fermi energy. We find that the density of states decreases slowly near Ef and reaches a minimum at about 0.5 eV above Ef.

Stability of the high-density ferromagnetic ground state of a chargeless, magnetic-dipolar, quantum Fermi liquid.

We obtain the best upper bound for the ground-state energy of a system of chargeless fermions of mass m, spin s=1/2 , and magnetic moment mus[over ] as a function of its density in the fully spin-polarized Hartree-Fock determinantal state, specified by a prolate spheroidal plane-wave single-particle occupation function n_(k[over ]) , by minimizing the total energy E at each density with respect to the variational spheroidal deformation parameter beta(2),0< or =beta(2)< or =1 . We find that at high densities, this spheroidal ferromagnetic state is the most likely ground state of the system, but it is still unstable towards the infinite-density collapse. This optimized ferromagnetic state is shown to be a stable ground state of the dipolar system at high densities, if one has an additional repulsive short-range hardcore interaction of sufficient strength and nonvanishing range.

Ab initio study of deep defect states in narrow band-gap semiconductors: group III impurities in PbTe.

The nature of deep defect states, in general, and those associated with group III elements (Ga, In, Tl) in narrow band-gap IV-VI semiconductors (PbTe and PbSe), in particular, have been of great interest over the past three decades. We present ab initio electronic structure calculations that give a new picture of these states compared to the currently accepted model in terms of a negative-U Hubbard model. The Fermi surface pinning and why In-doped PbTe and related compounds show excellent high temperature thermoelectric behavior can be understood within the new picture.

On the lamellar compounds CuBiP(2)Se(6), AgBiP(2)Se(6) and AgBiP(2)S(6). Antiferroelectric phase transitions due to cooperative Cu(+) and Bi(3+) ion motion.

CuBiP(2)Se(6), AgBiP(2)Se(6), and AgBiP(2)S(6) were prepared from the corresponding elements. CuBiP(2)Se(6) and AgBiP(2)Se(6) crystallize in the space group R with a = 6.5532(16) A and c = 39.762(13) A for CuBiP(2)Se(6) and a = 6.6524(13) A and c = 39.615(15) A for AgBiP(2)Se(6). AgBiP(2)S(6) crystallizes in the triclinic space group P with a = 6.3833(13) A, b = 7.1439(14) A, c = 9.5366(19) A, alpha = 91.89(3) degrees , beta = 91.45(3) degrees , gamma = 94.05(3) degrees . CuBiP(2)Se(6) was found to exhibit a temperature-dependent antiferroelectric ordering of the Cu(+) and Bi(3+) ions in the lattice. An intermediate and a fully ordered structure were refined at 173 and 97 K, respectively. Electronic band and total energy calculations at the DFT level clearly suggest that the antiferroelectric model is energetically favored over the paraelectric and hypothetical ferrielectric models. This phase transition can be classified as a second-order Jahn-Teller distortion. The antiferroelectric state of CuBiP(2)Se(6) is an indirect gap semiconductor. The compounds were characterized with differential thermal analysis and solid-state UV/vis diffuse reflectance spectroscopy. Generalized implications regarding the expected ferroelectric behavior of compounds in the CuMP(2)Se(6) system (M = trivalent metal) are discussed.

Tb4FeGe8 grown in liquid gallium: trans-cis chains from the distortion of a planar Ge square net.

The ternary germanide Tb4FeGe8 was obtained from Ga flux reactions. The crystal structure studied with single-crystal X-ray diffraction revealed the existence of an orthorhombic average substructure (Cmcm, Z=1) with cell parameters a = 4.1118(14) A, b=15.844(5) A, and c=3.9885(15) A. The refinement [I > 2sigma(I)] converged to final residuals R1/wR2 = 0.0363/0.0893. The average structure (CeNiSi2-type) consists of a 3D [Fe1/4Ge2] framework where Ge atoms form a square net and Fe atoms reside alternatively above and below it with only 1/4 occupation probability. X-ray and electron diffraction studies showed a modulation in the Ge net. The modulated structure was refined based on a 4-fold monoclinic supercell (P2(1)/n) with parameters a = 5.7315(11) A, b = 15.842(3) A, c = 11.438(2) A, and beta = 91.724(4) degrees with R1/wR2 = 0.0643/0.1735 and uncovered a severe distortion of the Ge square net. The Ge atoms are displaced to form an array of cis-trans chains. The Ge-Ge distances within these chains are distinctively bonding, whereas those between the chains are nonbonding. Results of the electronic structure calculations and magnetic measurements are also reported. The structural distortions found in Tb4FeGe8 cast a doubt onto the correctness of many of the reported REM1-xGe2 disordered compounds and call for reinvestigation.

Modeling the local structure and energetics of protozeolitic nanoclusters in hydrothermally stable aluminosilicate mesostructures.

The density functional theory (DFT) method is used to investigate the structure and bonding of silica and aluminosilicate nanoclusters containing five- and six-membered oxygen rings. The clusters, which are derived from the BEA zeolite structure, are considered as models of the protozeolitic clusters that are incorporated into the pore walls of steam stable aluminosilicate mesostructures assembled from zeolite seeds. Two locally different Brønsted acid sites in the aluminosilicate structure are identified for the adsorption of a water molecule. The sterically more open acid site is favored for water binding. The stability of the aluminosilicate structure in the presence of H2O molecule is studied by breaking an Al-O bond and inserting a water molecule into the five-membered ring structure. We find that an excitation energy at least 18 times larger than the room-temperature thermal energy is needed to break the stable five-membered ring structure, implying a high hydrothermal stability and acidity for this aluminosilicate structure.

Water mediated proton transfer in a mesostructured aluminosilicate framework: an ab initio molecular dynamics study.

The proton transfer process mediated by water molecules adsorbed in an aluminosilicate framework has been studied using ab initio molecular dynamics simulations. This investigation has been carried out using a quasi-one-dimensional model simulating the mesoporous aluminosilicate channel structures. The effects of both the water loading and temperature of the system have been considered. At low coverage (one water molecule per acid site), the hydroxonium ion (H(3)O)(+) is found to be a transition state, in agreement with earlier studies on zeolites. At a higher water coverage (two water molecules per acid site), the (H(5)O(2))(+) species and the hydrogen bonded "neutral complex" structure are both found to be stable complexes at finite temperatures. The vibrational frequency spectrum is simulated by performing a Fourier transform of the velocity autocorrelation function (VAF), and the peak positions in the VAF are compared with IR measurements and zero-temperature calculations.

Theoretical study of encapsulated alkali metal atoms in nanoporous channels of ITQ-4 zeolite: one-dimensional metals and inorganic electrides.

Electronic structure calculations within density-functional theory have been carried out in a class of novel inorganic electrides M-ITQ-4 zeolite (M = Na, K, Rb, Cs) to understand the competing effects of guest-guest (M-M) and guest-host (M-ITQ-4) interactions. We find that Na forms a nearly perfect 1D metal undergoing Peierls distortion whereas Cs couples rather strongly to the host accompanied by a large charge transfer. In addition to the guest-host high energy charge transfer excitations we find a new far infrared excitation peak in Na at approximately 0.35 eV that can be ascribed to the Peierls distortion.

Resonant states in the electronic structure of the high performance thermoelectrics AgPbmSbTe2+m: the role of Ag-Sb microstructures.

Ab initio electronic structure calculations based on gradient corrected density-functional theory were performed on a class of novel quaternary compounds AgPb(m)SbTe(2+m), which were found to be excellent high temperature thermoelctrics with a large figure of merit ZT approximately 2.2 at 800 K. We find that resonant states appear near the top of the valence and bottom of the conduction bands of bulk PbTe when Ag and Sb replace Pb. These states can be understood in terms of modified Te-Ag(Sb) bonds. The electronic structure near the gap depends sensitively on the microstructural arrangements of Ag-Sb atoms, suggesting that large ZT values may originate from the nature of these ordering arrangements.

Yb8Ge3Sb5, a metallic mixed-valent Zintl phase containing the polymeric 1 infinity[Ge3 4-] anions.

Yb8Ge3Sb5 is a nonclassical Zintl phase with metallic properties arising from the electropositive "spectator" cations of Yb. This compound contains the new Zintl anion 1infinity(Ge3)4- and is stabilized via a combination of Yb2+ and Yb3+ ions.

Stabilization of new forms of the intermetallic phases beta-RENiGe2 (RE = Dy, Ho, Er, Tm, Yb, Lu) in liquid indium.

Flux conditions using liquid indium bypass the thermodynamically stable structure and yield new forms of the phases RENiGe2 (RE = Dy, Er, Yb, Lu). The compounds crystallize in the orthorhombic Immm space group and possess the YIrGe2 structure type. Lattice parameters for ErNiGe2, DyNiGe2, YbNiGe2, and LuNiGe2 are a = 4.114(1) A, b = 8.430(2) A, c = 15.741(5) A; a = 4.1784(9) A, b = 8.865(2) A, c = 15.745(3) A; a = 4.0935(6) A, b = 8.4277(13) A, c = 15.751(2) A, and a = 4.092(1) A, b = 8.418(3) A, c = 15.742(5) A, respectively. These phases represent a new structural arrangement (beta) of the compound type RENiGe2 as another set of compounds with identical stoichiometry are known to adopt the orthorhombic Cmcm CeNiSi2 type structure (alpha). In this paper we report the crystal and electronic band structure of four new members of the YIrGe2 structure type, as well as an investigation of the relative thermodynamic stabilities of the two forms.