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1.
Pathol Res Pract ; 251: 154872, 2023 Nov.
Article in English | MEDLINE | ID: mdl-37820441

ABSTRACT

Women of reproductive age are frequently affected by the heterogeneous endocrine-metabolic conditions recognized as polycystic ovarian syndrome (PCOS). Moreover, FSH (Follicle-stimulating hormone), steroidogenesis, and LH (Luteinizing Hormone) are suppressed by the anti-Mullerian hormone, a good indicator of ovarian reserve, that is generated from granulosa cells. In the past ten years, vitamin D (VD) has attracted and maintained great interest in human health and biomedical research, particularly those about female reproductive-metabolic problems. Therefore, this study was designed to evaluate the correlation of VD and AMH with PCOS parameters in Egyptian women. Assessments were done on 35 control women and 45 PCOS sufferers. Utilizing the updated Rotterdam criteria, PCOS was identified. After recording anthropometric data, fasting serum levels of VD, follistatin (FST), insulin, FSH, LH, total testosterone (TT), sex hormone binding globulin (SHBG), as well as fasting plasma glucose (FPG), and the free androgen index (FAI) were measured in both groups. Compared to the control group, the PCOS group had a greater prevalence of hypovitaminosis D but serum levels of follistatin, LH, TT, AMH, insulin, and FPG, were considerably higher. Besides, there was a substantial inverse relationship between VD and the levels of follistatin, FPG, LH, TT, and AMH and a positive correlation with FSH in PCOS women's blood. This study revealed that hypovitaminosis D, elevated AMH, and FST may be regarded as alarming risk factors for PCOS in Egyptian women.


Subject(s)
Polycystic Ovary Syndrome , Vitamin D Deficiency , Female , Humans , Anti-Mullerian Hormone , Clinical Relevance , Egypt , Follicle Stimulating Hormone , Follistatin , Insulin , Obesity/complications , Testosterone , Vitamin D , Vitamin D Deficiency/complications
2.
Micromachines (Basel) ; 12(11)2021 Oct 21.
Article in English | MEDLINE | ID: mdl-34832696

ABSTRACT

In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V. The device has been modeled using numerical simulations to reproduce output and transfer characteristics. We identify, via experimental results and TCAD simulations, the main physical mechanisms responsible for the premature breakdown. The contribution of the AlN/Silicon substrate interface to the premature off-state breakdown is pointed out. Vertical leakage in lateral GaN devices significantly contributes to the off-state breakdown at high blocking voltages. The parasitic current path leads to premature breakdown before the appearance of avalanche or dielectric breakdown. A comparative study between a MOS-HEMT GaN on a silicon substrate with and without a SiNx interlayer at the AlN/Silicon substrate interface is presented here. We show that it is possible to increase the breakdown voltages of the fabricated transistors on a silicon substrate using SiNx interlayer.

3.
Pediatr Rheumatol Online J ; 16(1): 24, 2018 Apr 13.
Article in English | MEDLINE | ID: mdl-29653582

ABSTRACT

BACKGROUND: Rheumatic fever (RF) is the result of an autoimmune response to pharyngitis caused by infection with Streptococcus pyogenes. RF is most prevalent in Africa and the Middle East. Rheumatic heart disease (RHD) is the most serious complication of RF. Mannose-binding lectin 2 gene (MBL2) has been reported to be correlated with different cardiac conditions. In Egyptian patients as a new studied ethnic population, it is the first time to evaluate the association between MBL2 gene polymorphism rs1800450 and RF with and without RHD. METHODS: One hundred and sixty RF patients (80 with RHD and 80 without RHD) and eighty healthy ethnically matched controls were studied. MBL2 (rs1800450) was genotyped by real-time PCR using TaqMan® allele discrimination assay. The MBL level was measured by ELISA. Westergren erythrocytes sedimentation rate (ESR), anti-streptolysin O titer (ASOT), C-reactive protein (CRP) and complements (C3 and C4) were determined. RESULTS: The AA genotype with high production of MBL was associated with increased risk of RHD more than the B allele carrying subjects. However, MBL2 genotype related to the low production of MBL was more frequently observed in those patients without RHD. CONCLUSIONS: Our results suggested the involvement of MBL2 (rs1800450) polymorphism and its protein in RHD pathogenesis. Also, it might be a promising future strategy to utilize this polymorphism to help differentiate patients with RHD from those without RHD.


Subject(s)
Mannose-Binding Lectin/genetics , Rheumatic Fever/genetics , Rheumatic Heart Disease/genetics , Adolescent , Child , Egypt , Enzyme-Linked Immunosorbent Assay , Female , Genetic Predisposition to Disease , Genotype , Humans , Male , Pilot Projects , Polymorphism, Single Nucleotide , Real-Time Polymerase Chain Reaction , Rheumatic Fever/complications , Rheumatic Heart Disease/complications
4.
Rev. bras. psicodrama ; 23(1): 51-59, 2015.
Article in Portuguese | LILACS | ID: lil-772529

ABSTRACT

Para este trabalho, especificamente apresentamos uma proposta de intervenção grupal psicodramática intitulada de "Ressonância Corporal", fundamentada no estudo e na prática de ações que utilizam a linguagem não verbal - comunicação corporal -, objetivando desvelar aquilo que é falado e sentido, bem como potencializar a capacidade expressiva do corpo inerente às pessoas. A vivência apresentada promove o resgate e a consciência da linguagem corporal, a partir da prática e da reflexão da relação comunicação-corpo. A ressonância corporal pode ser classificada como uma intervenção psicodramática que implica duas ou mais pessoas "ressoarem" a mensagem emitida por um indivíduo ou um grupo por meio de uma ação corporal executada.


This paper introduces a specific psychodramatic group intervention, namely "Body Resonance", which has its foundations in the study and practice of action using non-verbal language - body communication - and aims to unveil what is spoken and felt, as well as enhance the body's inherent expressive power in people. The here described experience promotes the revival and awareness of body language, by exercising and reflecting on the relationship between body and communication. Body resonance can be understood as a psychodramatic intervention that involves two or more people "resonating" the messages issued by an individual or group, through performing bodily action.


Para este trabajo, proponemos un psicodrama de la intervención de grupo específico que titulado "Resonancia corporal" basado en las acciones del estudio y la práctica que utilizan lenguaje no verbal - comunicación corporal - desvelando así lo que se habla y dirección, así como mejoran el cuerpo de fuerza expresiva inherente en las personas. La experiencia presentada promueve el rescate y conocimiento del lenguaje corporal, de práctica y reflexión de la comunicación de la relación del cuerpo. La resonancia del cuerpo se puede clasificar como una intervención de psicodrama que consiste en dos o más personas "resuenan" el mensaje emitido por un individuo o grupo a través de una acción corporal.

5.
J Nanosci Nanotechnol ; 10(11): 7015-9, 2010 Nov.
Article in English | MEDLINE | ID: mdl-21137856

ABSTRACT

High-mobility III-V heterostructures are emerging and very promising materials likely to fulfil high-speed and low-power specifications for ambient intelligent applications. The main objective of this work is to theoretically explore the potentialities of MOSFET based on III-V materials with low bandgap and high electron mobility. First, the charge control is studied in III-V MOS structures using a Schrödinger-Poisson solver. Electronic transport in III-V devices is then analyzed using a particle Monte Carlo device simulator. The external access resistances used in the calculations are carefully calibrated on experimental results. The performance of different structures of nanoscale MOS transistor based on III-V materials is evaluated and the quasi-ballistic character of electron transport is compared to that in Si transistors of same gate length.

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