Optically induced static magnetic field in the ensemble of nitrogen-vacancy centers in diamond.

Generation of a local magnetic field at the nanoscale is desirable for many applications such as spin-qubit-based quantum memories. However, this is a challenge due to the slow decay of static magnetic fields. Here, we demonstrate a photonic spin density (PSD)-induced effective static magnetic field for an ensemble of nitrogen-vacancy (NV) centers in bulk diamond. This locally induced magnetic field is a result of coherent interaction between the optical excitation and the NV centers. We demonstrate an optically induced spin rotation on the Bloch sphere exceeding 10 degrees which has potential applications in all-optical coherent control of spin qubits.

Large bandgap quantum spin Hall insulator in methyl decorated plumbene monolayer: a first-principles study.

Topologically protected edge states of 2D quantum spin Hall (QSH) insulators have paved the way for dissipationless transport. In this regard, one of the key challenges is to find suitable QSH insulators with large bandgaps. Group IV analogues of graphene such as silicene, germanene, stanene, plumbene etc. are promising materials for QSH insulators. This is because their high spin-orbit coupling (SOC) and large bandgap opening may be possible by chemically decorating these group IV graphene analogues. However, finding suitable chemical groups for such decoration has always been a demanding task. In this work, we investigate the performance of a plumbene monolayer with -CX3 (X = H, F, Cl) chemical decoration and report very large bandgaps in the range of 0.8414 eV to 0.9818 eV with spin-orbit coupling, which is much higher compared to most other topological insulators and realizable at room temperature. The topological invariants of the samples are calculated to confirm their topologically nontrivial properties. The existence of edge states and topological nontrivial property are illustrated by investigating PbCX3 nanoribbons with zigzag edges. Lastly, the structural and electronic stability of the topological materials against strain are demonstrated to extend the scope of using these materials. Our findings suggest that these derivatives are promising materials for spintronic and future high performance nanoelectronic devices.