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1.
Micron ; 31(3): 309-13, 2000 Jun.
Article in English | MEDLINE | ID: mdl-10702981

ABSTRACT

We have investigated the In(Ga)As island formation, in the Stranski-Krastanov growth mode, on (311)A GaAs substrates. The surface topography of InAs and InGaAs strained epilayers was studied by contact microscopies. The different substrate affects the overgrown island shape. In(Ga)As grown on (311)A gives rise to quantum wire-like islands. Quantum dots (QDs), but with highly anisotropic shapes, are the outcomes of InAs deposition. QD samples were also characterized by photoluminescence (PL) measurements. Correlation between optical and morphological properties was observed.

6.
Phys Rev Lett ; 75(10): 1996-1999, 1995 Sep 04.
Article in English | MEDLINE | ID: mdl-10059182
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9.
Phys Rev B Condens Matter ; 50(11): 8074-8077, 1994 Sep 15.
Article in English | MEDLINE | ID: mdl-9974814
10.
13.
Phys Rev Lett ; 72(13): 2061-2064, 1994 Mar 28.
Article in English | MEDLINE | ID: mdl-10055778
18.
Phys Rev Lett ; 69(20): 2995, 1992 Nov 16.
Article in English | MEDLINE | ID: mdl-10046694
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