Air/liquid interfacial formation process of conductive metal-organic framework nanosheets.

The air/liquid interface is a superior platform to create nanosheets of materials by promoting spontaneous two-dimensional growth of components. Metal-organic frameworks (MOFs)-intrinsically porous crystals-with π-conjugated triphenylene-based ligands show high electrical conductivities. Forming nanosheets of such conductive MOFs should enable their use in electronic devices. Although highly conductive MOF nanosheets have been created at the air/liquid interface, direct control of their continuity, morphology, thickness, crystallinity, and orientation directly influencing device performance remains as an issue to be addressed. Here, we present detailed insights into the formation process of electrically conductive MOF nanosheets composed of 2,3,6,7,10,11-hexaiminotriphenylene (HITP) and Ni2+ ions (HITP-Ni-NS) at the air/liquid interface. The morphological and structural features of HITP-Ni-NS strongly depend on the standing time-the time without any external actions involved, but leaving the interface undisturbed after setting the ligand solution onto the metal-ion solution. We find that the fundamental features of HITP-Ni-NS are determined by the standing time with conductivity sensitively influenced by such pre-determined HITP-Ni-NS characteristics. These findings will lead towards the establishment of a rational strategy for creating MOF nanosheets at the air/liquid interface with desired properties, thereby accelerating their use in diverse potential applications.

Uniaxially Oriented Electrically Conductive Metal-Organic Framework Nanosheets Assembled at Air/Liquid Interfaces.

Although most metal-organic frameworks (MOFs)─highly porous crystalline metal complex networks with structural and functional varieties─are electrically insulating, high electrical conduction has been recently demonstrated in MOFs while retaining permanent porosity. Usability of electronically active MOFs effectively emerges when they are created in a thin-film state as required in major potential applications such as chemiresistive sensors, supercapacitors, and electrode catalysts. Thin-film morphology including crystallinity, thickness, density, roughness, and orientation sensitively influences device performance. Fine control of such morphological parameters still remains as a main issue to be addressed. Here, we report a bottom-up procedure of assembling a conductive MOF nanosheet composed of 2,3,6,7,10,11-hexaiminotriphenylene molecules and nickel ions (HITP-Ni-NS). Creation of HITP-Ni-NS is achieved by applying air/liquid (A/L) interfacial bottom-up synthesis. HITP-Ni-NS has a multilayered structure with 14 nm thickness and is endowed with high crystallinity and uniaxial orientation, demonstrated by synchrotron X-ray crystallography. Facile transferability of HITP-Ni-NS assembled at air/liquid interfaces to any desired substrate enables us to measure its electrical conductivity, recorded as 0.6 S cm-1─highest among those of triphenylene-based MOF nanosheets with a thickness lower than 100 nm.

Electronic excitation spectra of organic semiconductor/ionic liquid interface by electrochemical attenuated total reflectance spectroscopy.

The interface of organic semiconductor films is of particular importance with respect to various electrochemical devices such as transistors and solar cells. In this study, we developed a new spectroscopic system, namely electrochemical attenuated total reflectance ultraviolet (EC-ATR-UV) spectroscopy, which can access the interfacial area. Ionic liquid-gated organic field-effect transistors (IL-gated OFETs) were successfully fabricated on the ATR prism. Spectral changes of the organic semiconductor were then investigated in relation to the gate voltage application and IL species, and the magnitude of spectral changes was found to correlate positively with the drain current. Additionally, the Stark shifts of not only the organic semiconductor, but also of the IL on the organic semiconductor films were detected. This new method can be applied to other electrochemical devices such as organic thin film solar cells, in which the interfacial region is crucial to their functioning.

Damage-free Metal Electrode Transfer to Monolayer Organic Single Crystalline Thin Films.

Solution-processed organic thin film transistors (OTFTs) are an essential building block for next-generation printed electronic devices. Organic semiconductors (OSCs) that can spontaneously form a molecular assembly play a vital role in the fabrication of OTFTs. OTFT fabrication processes consist of sequential deposition of functional layers, which inherently brings significant difficulties in realizing ideal properties because underlayers are likely to be damaged by application of subsequent layers. These difficulties are particularly prominent when forming metal contact electrodes directly on an OSC surface, due to thermal damage during vacuum evaporation and the effect of solvents during subsequent photolithography. In this work, we demonstrate a simple and facile technique to transfer contact electrodes to ultrathin OSC films and form an ideal metal/OSC interface. Photolithographically defined metal electrodes are transferred and laminated using a polymeric bilayer thin film. One layer is a thick sacrificial polymer film that makes the overall film easier to handle and is water-soluble for dissolution later. The other is a thin buffer film that helps the template adhere to a substrate electrostatically. The present technique does not induce any fatal damage in the substrate OSC layers, which leads to successful fabrication of OTFTs composed of monolayer OSC films with a mobility of higher than 10 cm2 V-1 s-1, a subthreshold swing of less than 100 mV decade-1, and a low contact resistance of 175 Ω⋅cm. The reproducibility of efficient contact fabrication was confirmed by the operation of a 10 × 10 array of monolayer OTFTs. The technique developed here constitutes a key step forward not only for practical OTFT fabrication but also potentially for all existing vertically stacked organic devices, such as light-emitting diodes and solar cells.

High-performance, semiconducting membrane composed of ultrathin, single-crystal organic semiconductors.

Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. TFT fabrication processes inherently require the sequential deposition of metal, semiconductor, and dielectric layers and so on, which makes it difficult to achieve reliable production of highly integrated devices. The integration issues are more apparent in organic TFTs (OTFTs), particularly for solution-processed organic semiconductors due to limits on which underlayers are compatible with the printing technologies. We demonstrate a ground-breaking methodology to integrate an active, semiconducting layer of OTFTs. In this method, a solution-processed, semiconducting membrane composed of few-molecular-layer-thick single-crystal organic semiconductors is exfoliated by water as a self-standing ultrathin membrane on the water surface and then transferred directly to any given underlayer. The ultrathin, semiconducting membrane preserves its original single crystallinity, resulting in excellent electronic properties with a high mobility up to 12 [Formula: see text] The ability to achieve transfer of wafer-scale single crystals with almost no deterioration of electrical properties means the present method is scalable. The demonstrations in this study show that the present transfer method can revolutionize printed electronics and constitute a key step forward in TFT fabrication processes.

Review of advanced sensor devices employing nanoarchitectonics concepts.

Many recent advances in sensor technology have been possible due to nanotechnological advancements together with contributions from other research fields. Such interdisciplinary collaborations fit well with the emerging concept of nanoarchitectonics, which is a novel conceptual methodology to engineer functional materials and systems from nanoscale units through the fusion of nanotechnology with other research fields, including organic chemistry, supramolecular chemistry, materials science and biology. In this review article, we discuss recent advancements in sensor devices and sensor materials that take advantage of advanced nanoarchitectonics concepts for improved performance. In the first part, recent progress on sensor systems are roughly classified according to the sensor targets, such as chemical substances, physical conditions, and biological phenomena. In the following sections, advancements in various nanoarchitectonic motifs, including nanoporous structures, ultrathin films, and interfacial effects for improved sensor function are discussed to realize the importance of nanoarchitectonic structures. Many of these examples show that advancements in sensor technology are no longer limited by progress in microfabrication and nanofabrication of device structures - opening a new avenue for highly engineered, high performing sensor systems through the application of nanoarchitectonics concepts.

Scalable Fabrication of Organic Single-Crystalline Wafers for Reproducible TFT Arrays.

Building on significant developments in materials science and printing technologies, organic semiconductors (OSCs) promise an ideal platform for the production of printed electronic circuits. However, whether their unique solution-processing capability can facilitate the reliable mass manufacture of integrated circuits with reasonable areal coverage, and to what extent mass production of solution-processed electronic devices would allow substantial reductions in manufacturing costs, remain controversial. In the present study, we successfully manufactured a 4-inch (c.a. 100 mm) organic single-crystalline wafer via a simple, one-shot printing technique, on which 1,600 organic transistors were integrated and characterized. Owing to their single-crystalline nature, we were able to verify remarkably high reliability and reproducibility, with mobilities up to 10 cm2 V-1 s-1, a near-zero turn-on voltage, and excellent on-off ratio of approximately 107. This work provides a critical milestone in printed electronics, enabling industry-level manufacturing of OSC devices concomitantly with lowered manufacturing costs.