ABSTRACT
We study the thermal conductivity of diameter-modulated Si nanowires to understand the impact of different nanoscale transport mechanisms as a function of nanowire morphology. Our investigation couples transient suspended microbridge measurements of diameter-modulated Si nanowires synthesized via vapor-liquid-solid growth and dopant-selective etching with predictive Boltzmann transport modeling. We show that the presence of a low thermal conductivity phase (i.e., porosity) dominates the reduction in effective thermal conductivity and is supplemented by increased phonon-boundary scattering. The relative contributions of both mechanisms depend on the details of the nanoscale morphology. Our findings provide valuable insights into the factors that govern thermal conduction in complex nanoscale materials.
ABSTRACT
Thermal conduction in semiconductor nanowires is controlled by the transport of atomic vibrations also known as thermal phonons. The ability of nanowires to tailor the transport of thermal phonons stems from their precise atomic scale growth coupled with high structural surface to volume ratios. Understanding and manipulating thermal transport properties at the nanoscale is central for progress in the fields of microelectronics, optoelectronics, and thermoelectrics. Here, we review state-of-the-art advances in the understanding of nanowire thermal phonon transport and the design and fabrication of nanowires with tailored thermal conduction properties. We first introduce the basic physical mechanisms of thermal conduction at the nanoscale and detail recent developments in employing nanowires as thermal materials. We discuss and provide insight on different strategies to modulate nanowire thermal properties leveraging the underlying phonon transport processes occurring in nanowires. We also highlight challenges and key areas of interest to motivate future research and create exceptional capabilities to control heat flow in nanowires.
ABSTRACT
Thermal management is a crucial component in analyzing the performance of III-V semiconductor superlattice-based optoelectronic devices. Here we provide a rigorous physical analysis of cross-plane thermal conduction in GaAs/AlAs and their alloy-based superlattices while rigorously accounting for phonon interlayer coupling and interfacial structural characteristics. We present a comprehensive study of superlattice thermal transport, including structure-property relations, spectral and modal descriptions, and contrast it with in-plane heat conduction thereby explaining the resultant anisotropy in III-V semiconductor superlattices. Our results provide key physical insights into rational material design for thermal modulation in optoelectronic devices.
ABSTRACT
A comprehensive rational thermal material design paradigm requires the ability to reduce and enhance the thermal conductivities of nanomaterials. In contrast to the existing ability to reduce the thermal conductivity, methods that allow to enhance heat conduction are currently limited. Enhancing the nanoscale thermal conductivity could bring radical improvements in the performance of electronics, optoelectronics, and photovoltaic systems. Here, we show that enhanced thermal conductivities can be achieved in semiconductor nanostructures by rationally engineering phonon spectral coupling between materials. By embedding a germanium film between silicon layers, we show that its thermal conductivity can be increased by more than 100% at room temperature in contrast to a free standing thin-film. The injection of phonons from the cladding silicon layers creates the observed enhancement in thermal conductivity. We study the key factors underlying the phonon injection mechanism and find that the surface conditions and layer thicknesses play a determining role. The findings presented here will allow for the creation of nanomaterials with an increased thermal conductivity.
ABSTRACT
Thermal transport in nanostructures has attracted considerable attention in the last decade but the precise effects of surfaces on heat conduction have remained unclear due to a limited accuracy in the treatment of phonon surface scattering phenomena. Here, we investigate the impact of phonon-surface scattering on the distribution of thermal energy across phonon wavelengths and mean free paths in Si and SiGe nanowires. We present a rigorous and accurate description of phonon scattering at surfaces and predict and analyse nanowire heat spectra for different diameters and surface conditions. We show that the decrease in the diameter and increased roughness and correlation lengths makes the heat phonon spectra significantly shift towards short wavelengths and mean free paths. We also investigate the emergence of phonon confinement effects for small diameter nanowires and different surface scattering properties. Computed results for bulk materials show excellent agreement with recent experimentally-based approaches that reconstruct the mean-free-path heat spectra. Our phonon surface scattering model allows for an accurate theoretical extraction of heat spectra in nanowires and contributes to elucidate the development of critical phonon transport modes such as phonon confinement and coherent interference effects.
