ABSTRACT
The present study reports a two-step procedure to synthesize InN nanorods inside the pores of an anodic alumina membrane. In the first step, pores of the membrane are filled with indium via electrodeposition. The second step involves nitridation of the as-deposited nanorods by room temperature plasma annealing. X-ray diffraction studies reveal that as-deposited nanorods consist of In, In2O3 and In(OH)3 phases which get converted to mixed hexagonal and cubic phase InN on plasma annealing. Cross sectional scanning electron microscope study reveals nanorod diameter and length to be 150 nm and 1 microm respectively. X-ray mapping results establish that uniform distribution of nitrogen throughout the length of nanorod has been achieved as a result of plasma annealing. Observation of photoluminescence peaks at 1.4 and 1.6 eV corresponding, to the absorption edges of cubic and hexagonal phases of InN show that room temperature photoemission is due to band to band recombination. The use of alumina as a template for nanorod growth prevents post-deposition agglomeration and provides mechanical strength. Possibility of total internal reflection at the InN-Al2O3 interface makes these structures ideally suitable to reduce the emitted light intensity losses.