ABSTRACT
We report for the first time, to the best of our knowledge, on a diode-pumped passively Q-switched Er,Yb:GdAl3(BO3)4 laser. By using a Co2+:MgAl2O4 crystal as a saturable absorber, Q-switched laser pulses with a duration of 12 ns and a maximum energy of 18.7 µJ at a repetition rate of 32 kHz corresponding to an average output power of 0.6 W were obtained at 1550 nm under continuous-wave pumping. In the burst mode of operation, Q-switched laser pulses with the highest energy up to 44 µJ were realized with a pulse repetition rate of 6.5 kHz.
Subject(s)
Borates , Eye , Gadolinium , Lasers, Semiconductor , Lasers, Solid-State , Safety , Equipment DesignABSTRACT
We report the highly efficient continuous-wave diode-pumped laser operation of Er, Yb:GdAl3(BO3)4 crystal. Absorption and stimulated emission spectra, emission lifetimes, and efficiencies of energy transfer from Yb3+ to Er3+ ions were determined. A maximal output power of 780 mW was obtained at 1531 nm at absorbed pump power of 4 W with slope efficiency of 26%.
ABSTRACT
We report, for the first time to our knowledge, a diode-pumped cw and passively Q-switched microchip Er, Yb:YAl(3)(BO(3))(4) laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using Co(2+):MgAl(2)O(4) as a saturable absorber, a TEM(00)-mode Q-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 µJ at a repetition rate of 60 kHz.
