ABSTRACT
The rapidly expanding demand for photovoltaics (PVs) requires stable, quick, and easy to manufacture solar cells based on socioeconomically and ecologically viable earth-abundant resources. Sb2S3 has been a potential candidate for solar PVs and the efficiency of planar Sb2S3 thin-film solar cells has witnessed a reasonable rise from 5.77% in 2014 to 8% in 2022. Herein, the aim is to bring new insight into Sb2S3 solar cell research by investigating how the bulk and surface properties of the Sb2S3 absorber and the current-voltage and deep-level defect characteristics of solar cells based on these films are affected by the ultrasonic spray pyrolysis deposition temperature and the molar ratio of thiourea to SbEX in solution. The properties of the Sb2S3 absorber are characterized by bulk- and surface-sensitive methods. Solar cells are characterized by temperature-dependent current-voltage, external quantum efficiency, and deep-level transient spectroscopy measurements. In this paper, the first thin-film solar cells based on a planar Sb2S3 absorber grown from antimony ethyl xanthate (SbEX) by ultrasonic spray pyrolysis in air are demonstrated. Devices based on the Sb2S3 absorber grown at 200 °C, especially from a solution of thiourea and SbEX in a molar ratio of 4.5, perform the best by virtue of suppressed surface oxidation of Sb2S3, favorable band alignment, Sb-vacancy concentration, a continuous film morphology, and a suitable film thickness of 75 nm, achieving up to 4.1% power conversion efficiency, which is the best efficiency to date for planar Sb2S3 solar cells grown from xanthate-based precursors. Our findings highlight the importance of developing synthesis conditions to achieve the best solar cell device performance for an Sb2S3 absorber layer pertaining to the chosen deposition method, experimental setup, and precursors.
ABSTRACT
Fluorene-based hole transport materials (HTMs) with terminating thiophene units are explored, for the first time, for antimony sulfide (Sb2S3) solar cells. These HTMs possess largely simplified synthesis processes and high yields compared to the conventional expensive hole conductors making them reasonably economical. The thiophene unit-linked HTMs have been successfully demonstrated in ultrasonic spray-deposited Sb2S3 solar cells resulting in efficiencies in the range of 4.7-4.9% with an average visible transmittance (AVT) of 30-33% (400-800 nm) for the cell stack without metal contact, while the cells fabricated using conventional P3HT have yielded an efficiency of 4.7% with an AVT of 26%. The study puts forward cost-effective and transparent HTMs that avoid a post-coating activation at elevated temperatures like P3HT, devoid of parasitic absorption losses in the visible region and are demonstrated to be well aligned for the band edges of Sb2S3 thereby ascertaining their suitability for Sb2S3 solar cells and are potential candidates for semitransparent applications.
ABSTRACT
Cu(In,Ga)Se2 (CIGS) absorbers are prepared by direct current electrodeposition process followed by selenization of precursors. Selenization of electrodeposited layers is performed in a tubular furnace at 550 °C in elemental selenium atmosphere using Ar as carrier gas. The effect of evacuation of tube prior to the selenization on the formation of CIGS absorbers is studied. Characterization of CIGS absorbers reveals that the samples selenized without prior evacuation found to have excess MoSe2 formation at the CIGS/Mo interface leading to bulk cracks in underlying Mo back contact compared to their counterparts. Although the fabricated solar cells using the absorbers, prepared with and without evacuation, are observed to be photoactive, the cells from vacuum-based selenization showed improvement in performance compared to the cells from non-vacuum selenization. The process is further being improved to enhance the efficiency, which can pave way towards environmentally friendly low-cost solar cells.
