Magneto-transport in the monolayer MoS2material system for high-performance field-effect transistor applications.

Electronic transport in monolayer MoS2is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and magneto-transport in monolayer MoS2. In order to quantitatively interpret the magneto-transport behavior of monolayer MoS2on different substrate materials, identify the underlying bottlenecks, and provide guidelines for subsequent improvements, we present a deep analysis of the magneto-transport properties in the diffusive limit. Our calculations are performed on suspended monolayer MoS2and MoS2on different substrate materials taking into account remote impurity and the intrinsic and extrinsic phonon scattering mechanisms. We calculate the crucial transport parameters such as the Hall mobility, the conductivity tensor elements, the Hall factor, and the magnetoresistance over a wide range of temperatures, carrier concentrations, and magnetic fields. The Hall factor being a key quantity for calculating the carrier concentration and drift mobility, we show that for suspended monolayer MoS2at room temperature, the Hall factor value is around 1.43 for magnetic fields ranging from 0.001 to 1 Tesla, which deviates significantly from the usual value of unity. In contrast, the Hall factor for various substrates approaches the ideal value of unity and remains stable in response to the magnetic field and temperature. We also show that the MoS2over an Al2O3substrate is a good choice for the Hall effect detector. Moreover, the magnetoresistance increases with an increase in magnetic field strength for smaller magnetic fields before reaching saturation at higher magnetic fields. The presented theoretical model quantitatively captures the scaling of mobility and various magnetoresistance coefficients with temperature, carrier densities, and magnetic fields.

Can magnetotransport properties provide insight into the functional groups in semiconducting MXenes?

Hall scattering factors of Sc2CF2, Sc2CO2 and Sc2C(OH)2 are calculated using Rode's iterative approach by solving the Boltzmann transport equation. This is carried out in conjunction with calculations based on density functional theory. The electrical transport in Sc2CF2, Sc2CO2 and Sc2C(OH)2 is modelled by accounting for both elastic (acoustic and piezoelectric) and inelastic (polar optical phonon) scattering. Polar optical phonon (POP) scattering is the most significant mechanism in these MXenes. We observe that there is a window of carrier concentration where the Hall factor acts dramatically; Sc2CF2 obtains an incredibly high value of 2.49 while Sc2CO2 achieves a very small value of approximately 0.5, and Sc2C(OH)2 achieves the so called ideal value of 1. We propose in this paper that such Hall factor behaviour has significant promise in the field of surface group identification in MXenes, an issue that has long baffled researchers.

Semi-classical electronic transport properties of ternary compound AlGaAs2: role of different scattering mechanisms.

Using Rode's iterative method, we have investigated the semi-classical transport properties of the n-type ternary compound AlGaAs2. Four scattering mechanisms have been included in our transport calculation, namely, ionized impurity, piezoelectric, acoustic deformation and polar optical phonon (POP). The scattering rates have been calculated in terms of ab initio parameters. We consider AlGaAs2 to have two distinct crystal geometries, one in tetragonal phase (space group: [Formula: see text]), while the other one having body centered tetragonal crystal structure (space group: [Formula: see text]). Higher electron mobility has been observed in the body centered tetragonal phase, thereby making it more suitable for high mobility device application, over the tetragonal phase. In order to understand the differences in electron mobility for these two phases, curvatures of the E-k dispersion of the conduction bands for these phases have been compared. At room temperature, the dominant contribution in electron mobility was found to be provided by inelastic POP scattering. We have also noted that mobility is underestimated in relaxation time approximation compared with the Rode's iterative approach.

Ab initio semi-classical electronic transport in ZnSe: the role of inelastic scattering mechanisms.

We present a detailed ab initio study of semi-classical transport in n-ZnSe using Rode's iterative method. Inclusion of ionized impurity, piezoelectric, acoustic deformation and polar optical phonon scattering and their relative importance at low and room temperature for various n-ZnSe samples are discussed in depth. We have clearly noted that inelastic polar optical phonon scattering is the most dominant scattering mechanism over most of the temperature region. Our results are in good agreement with the experimental data for the mobility and conductivity obtained at different doping concentrations over a wider range of temperatures. Also we compare these results with the ones obtained with relaxation time approximation (RTA) which clearly demonstrate the superiority of the iterative method over RTA.