ABSTRACT
Many recent advances in novel solar cell technologies are based on charge separation in disordered semiconductor heterojunctions. In this work we use the Random Walk Numerical Simulation (RWNS) method to model the dynamics of electrons and holes in two disordered semiconductors in contact. Miller-Abrahams hopping rates and a tunnelling distance-dependent electron-hole annihilation mechanism are used to model transport and recombination, respectively. To test the validity of the model, three numerical "experiments" have been devised: (1) in the absence of constant illumination, charge separation has been quantified by computing surface photovoltage (SPV) transients. (2) By applying a continuous generation of electron-hole pairs, the model can be used to simulate a solar cell under steady-state conditions. This has been exploited to calculate open-circuit voltages and recombination currents for an archetypical bulk heterojunction solar cell (BHJ). (3) The calculations have been extended to nanostructured solar cells with inorganic sensitizers to study, specifically, non-ideality in the recombination rate. The RWNS model in combination with exponential disorder and an activated tunnelling mechanism for transport and recombination is shown to reproduce correctly charge separation parameters in these three "experiments". This provides a theoretical basis to study relevant features of novel solar cell technologies.
ABSTRACT
A numerical model that simulates the steady-state current-voltage curve and the time-dependent response of a dye-sensitized solar cell with a single continuity equation is derived. It is shown that the inclusion of the multiple-trapping model, the quasi-static approximation and non-linear recombination kinetics leads to a continuity equation for the total electron density in the photoanode with an electron density-dependent diffusion coefficient and a density-dependent pseudo-first order recombination constant. All parameters in the model can be related to quantities accessible experimentally. The required power exponents are taken from impedance spectroscopy measurements at different voltages. The model provides new insights into the physical interpretation of the power exponents. Modeling examples involving a high-efficiency TiO(2)-based dye solar cell and a ZnO-based dye solar cell are presented. It is demonstrated that the model reproduces the transient behavior of the cell under small perturbations. The spatial dependence of the recombination rate and the influence of film thickness and of voltage dependent injection efficiency on cell performance are studied. The implications of the model are discussed in terms of efficiencies potentially attainable in dye-sensitized solar cells and other kinds of solar cells with a diffusional mechanism of charge transport.
