Equivalence of the boson peak in glasses to the transverse acoustic van Hove singularity in crystals.

We compare the atomic dynamics of the glass to that of the relevant crystal. In the spectra of inelastic scattering, the boson peak of the glass appears higher than the transverse acoustic (TA) singularity of the crystal. However, the density of states shows that they have the same number of states. Increasing pressure causes the transformation of the boson peak of the glass towards the TA singularity of the crystal. Once corrected for the difference in the elastic medium, the boson peak matches the TA singularity in energy and height. This suggests the identical nature of the two features.

Comparative Raman and HRTEM study of nanostructured GaN nucleation layers and device layers on sapphire (0001).

Raman spectroscopy in conjunction with high-resolution transmission electron microscopy (HRTEM) has been used to study structural characteristics and strain distribution of the nanostructured GaN nucleation layer (NL) and the GaN device layer on (0001) sapphire substrates used for light-emitting diodes and lasers. Raman peaks corresponding to the cubic and the hexagonal phase of GaN are observed in the Raman spectrum from 15 nm and 45 nm NLs. A comparison of the peak intensities for the cubic and hexagonal phases of GaN in the NLs suggests that the cubic phase is dominant in the 15 nm NL and the hexagonal phase in the 45 nm NL. An increase in the density of stacking faults in the metastable cubic GaN (c-GaN) phase with increasing growth time lowers the system energy as well as locally converts c-GaN phase into hexagonal GaN (h-GaN). It also explains the observation of the more intense peaks of h-GaN in the 45 nm NL compared to c-GaN peaks. For the sample wherein an h-GaN device layer was grown at higher temperatures on the NL, narrow Raman peaks corresponding to only h-GaN were observed, confirming the high-quality of the films. The peak shift of the E2(H)(LO) mode of h-GaN in the NLs and the h-GaN film suggests the presence of a tensile stress in the NL which is attributed to defects such as stacking faults and twins, and a compressive stress in high-temperature grown h-GaN film which is attributed to the thermal-expansion mismatch between the film and the substrate. The peak shifts of the substrate also reveal that during the low temperature growth of the NL the substrate is under a compressive stress which is attributed to defects in the NL and during the high temperature growth of the device layer, there is a tensile strain in the substrate as expected from differences in coefficients of thermal expansion of the film and the substrate during the cooling cycle.

In situ Brillouin spectroscopy of a pressure-induced apparent second-order transition in a silicate glass.

Brillouin scattering measurements of a silicate glass, carried out at high pressures in the diamond anvil cell, show a dramatic increase in the pressure dependence of longitudinal velocity, and a discontinuity in the compressibility of the glass at about 6 GPa. While a first-order phase transition has been documented under pressure within amorphous ice, we demonstrate that an apparent second-order transition to a new, structurally distinct amorphous phase can occur via the abrupt onset of a new compressional mechanism, which may be triggered by a shift in polymerization of the glass or an onset of a change in coordination of silicon, within pressurized amorphous silicates.

Raman and Brillouin scattering spectroscopy studies of atomic layer-deposited ZrO(2) and HfO(2) thin films.

Atomic layer-deposited ZrO(2) (zirconia) and HfO(2) (hafnia) films with various thicknesses, ranging from 112 to 660 nm, have been studied by Raman scattering spectroscopy. Spectral analysis of the excellent quality Raman data obtained by using freestanding edges of the films has unambiguously demonstrated that a metastable tetragonal t-ZrO(2) is coexisting with the stable monoclinic phase in zirconia films. Even though the Raman spectrum signal-to-noise ratio was high, only the monoclinic phase was positively identified from the observed spectral patterns of hafnia films. X-ray diffraction patterns are used to define the structure of metastable phases. Complementary Brillouin light scattering measurements of the freestanding edges are also employed in constraining elastic properties of the 405 nm HfO(2) thin film.