ABSTRACT
This work demonstrates the patterning of thin films (approximately 25 nm) of a newly synthesized fullerene derivative by direct-write electron-beam lithography to produce highly conducting carbon microstructures. Scanning electron microscopy and atomic force microscopy are used to characterize the resulting microstructure morphology, whilst the resistivities of the structures are probed using four-point probe electrodes deposited on the microstructures by lift-off. The microstructures have a resistivity of approximately 9.5 x 10(-3) Omega cm after exposure to an electron dose of 0.1 C cm(-2). The method may have applications in the generation and electrical contacting of organic electronics, organic photovoltaics, and lab-on-a-chip devices.
Subject(s)
Fullerenes/chemistry , Nanowires/chemistry , Electric Conductivity , Electrons , Magnetic Resonance Spectroscopy , Microscopy, Atomic Force , Microscopy, Electron, Scanning , Nanotechnology/methods , Nanotubes, Carbon/chemistry , Nanotubes, Carbon/ultrastructure , Nanowires/ultrastructureABSTRACT
Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned.
