ABSTRACT
The occupied and the unoccupied electronic structure of CeAg2Ge2 single crystal has been studied using high resolution photoemission and inverse photoemission spectroscopy, respectively. High resolution photoemission reveals the clear signature of Ce 4f states in the occupied electronic structure which was not observed clearly in our earlier studies. The Coulomb correlation energy in this system has been determined experimentally from the position of the 4f states above and below the Fermi level. Theoretically, the correlation energy has been determined by using the first principles density functional calculations within the generalized gradient approximations taking into account the strong intra-atomic (on-site) interaction Hubbard Ueff term. The calculated valence band shows minor changes in the spectral shape with increasing Ueff due to the fact that the density of Ce 4f state is narrow in the occupied part and is hybridized with the Ce 5d, Ag 4d and Ge 4p states. On the other hand, substantial changes are observed in the spectral shape of the calculated conduction band with increasing Ueff since the density of Ce 4f state is very large in the unoccupied part, compared to other states. The estimated value of correlation energy for CeAg2Ge2 from the experiment and the theory is ≈ 4.2 eV. The resonant photoemission data are analyzed in the framework of the single-impurity Anderson model which further confirms the presence of the Coulomb correlation energy and small hybridization in this system.
ABSTRACT
By imaging the spatial intensity distribution of the electrons from a Stoffel-Johnson (SJ) type low energy electron source for inverse photoemission spectroscopy (IPES), we find that the focus is distorted when the beam current exceeds the limiting value due to space charge effect. The space charge effect and the contact potential difference suppress the beam current at low energies (<10 eV). In this work, we show that these limitations of the SJ source can be overcome by compensation of the contact potential difference between the cathode and the lens electrodes and an uniform well focused electron beam with the set kinetic energy can be obtained. The size of the electron beam is around 1 mm full width at half maximum over the whole energy range of 5 to 30 eV generally used for IPES. The compensation of the contact potential difference also enhances the beam current substantially at low energies (<10 eV) and uniform beam current is achieved for the whole energy range. We find that the drift in the electron beam position is sensitive to the lens electrode separation and it is about 1 mm over the whole energy range. By measuring the n = 1 image potential state on Cu(100), we show that the resolution is better when the cathode filament current is set to lower values.
ABSTRACT
We use hard x-ray photoemission to resolve a controversial issue regarding the mechanism for the formation of quasicrystalline solids, i.e., the existence of a pseudogap at the Fermi level. Our data from icosahedral fivefold Al-Pd-Mn and Al-Cu-Fe quasicrystals demonstrate the presence of a pseudogap, which is not observed in surface sensitive low energy photoemission because the spectrum is affected by a metallic phase near the surface. In contrast to Al-Pd-Mn, we find that in Al-Cu-Fe the pseudogap is fully formed; i.e., the density of states reaches zero at E(F) indicating that it is close to the metal-insulator phase boundary.
ABSTRACT
A modified design of a CaF(2)/acetone bandpass photon detector that uses Kr as a filter gas to tune the energy resolution is presented. Our design combines two standard single window detector tubes to build the Kr filter gas chamber. Synchrotron radiation has been used to determine the energy resolution of the detector, as a function of Kr pressure. The improvement in the detector energy resolution by 250 meV compared to the CaF(2)/acetone detector is better than that reported earlier. Substantial variation in the shape of the CaF(2)/acetone detector response functions is observed for different acetone pressure (≤3 mbar), and anode voltage (≤800 V). Our analysis reveals that the changes in the shape of the detector response function are associated to different regions of the detector operation.
ABSTRACT
We report a bandpass ultraviolet photon detector for inverse photoemission spectroscopy with energy resolution of 82 ± 2 meV. The detector (Sr(0.7)Ca(0.3)F(2)/acetone) consists of Sr(0.7)Ca(0.3)F(2) entrance window with energy transmission cutoff of 9.85 eV and acetone as detection gas with 9.7 eV photoionization threshold. The response function of the detector, measured using synchrotron radiation, has a nearly Gaussian shape. The n = 1 image potential state of Cu(100) and the Fermi edge of silver have been measured to demonstrate the improvement in resolution compared to the CaF(2)/acetone detector. To show the advantage of improved resolution of the Sr(0.7)Ca(0.3)F(2)/acetone detector, the metal to semiconductor transition in Sn has been studied. The pseudogap in the semiconducting phase of Sn could be identified, which is not possible with the CaF(2)/acetone detector because of its worse resolution.
ABSTRACT
We present a design of a compact and versatile sample holder meant for studying complex (ternary) metallic crystals that require sputtering and annealing to high temperatures under ultrahigh vacuum (10(-10) mbar range) for obtaining the clean, ordered and stoichiometric surface. A resistive heater is fixed to the sample holder and not to the sample plate, and thus can be thoroughly degassed initially to high temperatures without heating the sample. The heater, which is mounted vertically on the sample holder frame, slides into the sample plate of rectangular cross-section during sample transfer. For efficient cooling that is required for adlayer deposition, Cu braids can be pressed on the sample plate from both sides through a screw mechanism. The sample holder has 5 degrees of freedom including a tilt rotation. The sample holder has been used to study different metal surfaces such as ferromagnetic shape memory alloys, alkali metal and Mn adlayers on Al-Pd-Mn quasicrystal, aluminum metal, and Al-Mn alloys. Here, our recent results on temperature dependent low energy electron diffraction study of Ni(2)MnGa(100) are presented.
ABSTRACT
Pseudomorphic growth of thin elemental metal films is often observed on a variety of crystalline solids. On quasicrystalline surfaces with their complex structure and the absence of translational periodicity, the situation is different since elemental metals do not exhibit quasicrystalline order, and hence the specific interaction between overlayer and substrate is decisive. Here we study the growth of manganese films on an icosahedral i-Al-Pd-Mn alloy with a view to establishing the growth mode and electronic structure. Although we observe an exponential intensity variation of the adlayer and substrate related x-ray photoemission spectroscopy (XPS) peaks, low energy electron diffraction (LEED) shows that Mn adlayers do not exhibit quasicrystallinity. The detailed structure of the Mn 2p core level line reveals considerable electronic structure differences between the quasicrystalline and elemental metal environment. Evidence of a substantial local magnetic moment on the Mn atoms in the overlayer (about 2.8 µ(B)) is obtained from the Mn 3s exchange splitting.
