Crystallinity as a factor of SERS stability of silver nanoparticles formed by Ar+ irradiation.

The plasmonic sensors based on silver nanoparticles are limited in application due to their relatively fast degradation in the ambient atmosphere. The technology of ion-beam modification for the creation of monocrystalline silver nanoparticles (NPs) with stable plasmonic properties will expand the application of silver nanostructures. In the present study, highly-stable monocrystalline NPs were formed on the basis of a thin silver film by low-energy ion irradiation. Combined with lithography, this technique allows the creation of nanoparticle ensembles in variant forms. The characterization of the nanoparticles formed by ion-beam modification showed long-term outstanding for Ag nanoparticles stability of their plasmonic properties due to their monocrystalline structure. According to optical spectroscopy data, the reliable plasmonic properties in the ambient atmosphere are preserved for up to 39 days. The mapping of crystal violet dye via surface-enhanced Raman spectroscopy (SERS) revealed a strong amplification factor sustaining at least thrice as long as the one of similarly sized polycrystalline silver NPs formed by annealing. The plasmonic properties sustain more than a month of storage in the ambient atmosphere. Thus, ion-beam modification of silver film makes it possible to fabricate NPs with stable plasmonic properties and form clusters of NPs for sensor technology and SERS applications.

Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf0.5Zr0.5O2 Film.

The nanosecond speed of information writing and reading is recognized as one of the main advantages of next-generation non-volatile ferroelectric memory based on hafnium oxide thin films. However, the kinetics of polarization switching in this material have a complex nature, and despite the high speed of internal switching, the real speed can deteriorate significantly due to various external reasons. In this work, we reveal that the domain structure and the dielectric layer formed at the electrode interface contribute significantly to the polarization switching speed of 10 nm thick Hf0.5Zr0.5O2 (HZO) film. The mechanism of speed degradation is related to the generation of charged defects in the film which accompany the formation of the interfacial dielectric layer during oxidization of the electrode. Such defects are pinning centers that prevent domain propagation upon polarization switching. To clarify this issue, we fabricate two types of similar W/HZO/TiN capacitor structures, differing only in the thickness of the electrode interlayer, and compare their ferroelectric (including local ferroelectric), dielectric, structural (including microstructural), chemical, and morphological properties, which are comprehensively investigated using several advanced techniques, in particular, hard X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and electron beam induced current technique.

Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS2 Films.

Metal-Organic CVD method (MOCVD) allows for deposition of ultrathin 2D transition metal dichalcogenides (TMD) films of electronic quality onto wafer-scale substrates. In this work, the effect of temperature on structure, chemical states, and electronic qualities of the MOCVD MoS2 films were investigated. The results demonstrate that the temperature increase in the range of 650 °C to 950 °C results in non-monotonic average crystallite size variation. Atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy investigation has established the film crystal structure improvement with temperature increase in this range. At the same time, X-Ray photoelectron spectroscopy (XPS) method allowed to reveal non-stoichiometric phase fraction increase, corresponding to increased sulfur vacancies (VS) concentration from approximately 0.9 at.% to 3.6 at.%. Established dependency between the crystallite domains size and VS concentration suggests that these vacancies are form predominantly at the grain boundaries. The results suggest that an increased Vs concentration and enhanced charge carriers scattering at the grains' boundaries should be the primary reasons of films' resistivity increase from 4 kΩ·cm to 39 kΩ·cm.

Broadband Optical Properties of Bi2Se3.

Materials with high optical constants are of paramount importance for efficient light manipulation in nanophotonics applications. Recent advances in materials science have revealed that van der Waals (vdW) materials have large optical responses owing to strong in-plane covalent bonding and weak out-of-plane vdW interactions. However, the optical constants of vdW materials depend on numerous factors, e.g., synthesis and transfer method. Here, we demonstrate that in a broad spectral range (290-3300 nm) the refractive index n and the extinction coefficient k of Bi2Se3 are almost independent of synthesis technology, with only a ~10% difference in n and k between synthesis approaches, unlike other vdW materials, such as MoS2, which has a ~60% difference between synthesis approaches. As a practical demonstration, we showed, using the examples of biosensors and therapeutic nanoparticles, that this slight difference in optical constants results in reproducible efficiency in Bi2Se3-based photonic devices.

Stabilization of the Nano-Sized 1T Phase through Rhenium Doping in the Metal-Organic CVD MoS2 Films.

Heterogeneous nanostructures composed of metastable tetragonal 1T-MoS2 and stable hexagonal 2H-MoS2 phases are highly promising for a wide range of applications, including catalysis and ion batteries, due to the high electrical conductivity and catalytic activity of the 1T phase. However, a controllable synthesis of stabilized 1T-MoS2 films over the wafer-scale area is challenging. In this work, a metal-organic chemical vapor deposition process allowing us to obtain ultrathin MoS2 films containing both 1T and 2H phases and control their ratio through rhenium doping was suggested. As a result, Mo1-xRexS2 films with a 1T-MoS2 fraction up to ≈30% were obtained, which were relatively stable under normal conditions for a long time. X-ray photoelectron spectroscopy and Raman spectroscopy also indicated that the 1T-MoS2 phase fraction increased with rhenium concentration increase saturating at Re concentrations above 5 at. %. Also, its concentration was found to significantly affect the film resistivity. Thus, the resistivity of the film containing approximately 30% of the 1T phase was about 130 times lower than that of the film without the 1T phase.

Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets.

The influence of the bottom TiO2 interfacial layer grown by atomic layer deposition on the ferroelectric properties of the TiN/Hf0.5Zr0.5O2/TiN capacitors is systematically investigated. We show that the integration of the TiO2 layer leads to an increase in the polar orthorhombic phase content in the Hf0.5Zr0.5O2 film. In addition, the crystalline structure of the Hf0.5Zr0.5O2 film is highly dependent on the thickness of the TiO2 inset, with monoclinic phase stabilization after the increase of TiO2 thickness. Special attention in this work is given to the key reliability parameters-retention and endurance. We demonstrate that the integration of the TiO2 inset induces valuable retention improvement. Using a novel approach to the depolarization measurements, we show that the depolarization contribution to the retention loss is insignificant, which leaves the imprint effect as the root of the retention loss in TiN/TiO2/Hf0.5Zr0.5O2/TiN devices. We believe that the integration of the insulator interfacial layer suppresses the scavenging effect from the bottom TiN electrode, leading to a decrease in the oxygen vacancy content in the Hf0.5Zr0.5O2 film, which is the main reason for imprint mitigation. At the same time, although the observed retention improvement is very promising for the upcoming technological integration, the field cycling testing revealed the endurance limitations linked to the phase transitions in the TiO2 layer and the rise of the effective electric field applied to the Hf0.5Zr0.5O2 film.

Tailoring of the Distribution of SERS-Active Silver Nanoparticles by Post-Deposition Low-Energy Ion Beam Irradiation.

The possibility of controlled scalable nanostructuring of surfaces by the formation of the plasmonic nanoparticles is very important for the development of sensors, solar cells, etc. In this work, the formation of the ensembles of silver nanoparticles on silicon and glass substrates by the magnetron deposition technique and the subsequent low-energy Ar+ ion irradiation was studied. The possibility of controlling the sizes, shapes and aerial density of the nanoparticles by the variation of the deposition and irradiation parameters was systematically investigated. Scanning electron microscopy studies of the samples deposited and irradiated in different conditions allowed for analysis of the morphological features of the nanoparticles and the distribution of their sizes and allowed for determination of the optimal parameters for the formation of the plasmonic-active structures. Additionally, the plasmonic properties of the resulting nanoparticles were characterized by means of linear spectroscopy and surface-enhanced Raman spectroscopy. Hereby, in this work, we demonstrate the possibility of the fabrication of silver nanoparticles with a widely varied range of average sizes and aerial density by means of a post-deposition ion irradiation technique to form nanostructured surfaces which can be applied in sensing technologies and surface-enhanced Raman spectroscopy (SERS).

Field-Effect Transistor Based on 2D Microcrystalline MoS2 Film Grown by Sulfurization of Atomically Layer Deposited MoO3.

Atomically thin molybdenum disulfide (MoS2) is a promising channel material for next-generation thin-body field-effect transistors (FETs), which makes the development of methods allowing for its controllable synthesis over a large area an essential task. Currently, one of the cost-effective ways of its synthesis is the sulfurization of preliminary grown oxide- or metallic film. However, despite apparent progress in this field, the electronic quality of the obtained MoS2 is inferior to that of exfoliated samples, making the detailed investigation of the sulfurized films' properties of great interest. In this work, we synthesized continuous MoS2 films with a thickness of ≈2.2 nm via the sulfurization of an atomic-layer-deposited MoO3 layer. X-ray photoelectron spectroscopy, transmission electron microscopy, and Raman spectroscopy indicated the appropriate chemical composition and microcrystalline structure of the obtained MoS2 films. The semiconductor quality of the synthesized films was confirmed by the fabrication of a field-effect transistor (FET) with an Ion/Ioff ratio of ≈40, which was limited primarily by the high contact resistance. The Schottky barrier height at the Au/MoS2 interface was found to be ≈1.2 eV indicating the necessity of careful contact engineering. Due to its simplicity and cost-effectiveness, such a technique of MoS2 synthesis still appears to be highly attractive for its applications in next-generation microelectronics. Therefore, further research of the electronic properties of films obtained via this technique is required.

On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes.

Despite the great potential of Hf0.5Zr0.5O2 (HZO) ferroelectrics, reliability issues, such as wake-up, fatigue, endurance limitations, imprint and retention loss, impede the implementation of HZO to nonvolatile memory devices. Herein, a study of the reliability properties in HZO-based stacks with the conventional TiN top electrode and Ru electrode, which is considered a promising alternative to TiN, is performed. An attempt to distinguish the mechanisms underlying the wake-up, fatigue and retention loss in both kinds of stacks is undertaken. Overall, both stacks show pronounced wake-up and retention loss. Moreover, the fatigue and retention loss were found to be worsened by Ru implementation. The huge fatigue was suggested to be because Ru does not protect HZO against oxygen vacancies generation during prolonged cycling. The vacancies generated in the presence of Ru are most likely deeper traps, as compared to the traps formed at the interface with the TiN electrode. Implementing the new procedure, which can separate the depolarization-caused retention loss from the imprint-caused one, reveal a rise in the depolarization contribution with Ru implementation, accompanied by the maintenance of similarly high imprint, as in the case with the TiN electrode. Results show that the mechanisms behind the reliability issues in HZO-based capacitors are very electrode dependent and simple approaches to replacing the TiN electrode with the one providing, for example, just higher remnant polarization or lower leakages, become irrelevant on closer examination.

Synthesis of Titanium Nitride Nanoparticles by Pulsed Laser Ablation in Different Aqueous and Organic Solutions.

Owing to a strong photothermal response in the near-IR spectral range and very low toxicity, titanium nitride (TiN) nanoparticles (NPs) synthesized by pulsed laser ablation in liquids (PLAL) present a novel appealing object for photo-induced therapy of cancer, but the properties of these NPs still require detailed investigation. Here, we have elaborated methods of femtosecond laser ablation from the TiN target in a variety of liquid solutions, including acetonitrile, dimethylformamide, acetone, water, and H2O2, to synthesize TiN NPs and clarify the effect of liquid type on the composition and properties of the formed NPs. The ablation in all solvents led to the formation of spherical NPs with a mean size depending on the liquid type, while the composition of the NPs ranged from partly oxidized TiN to almost pure TiO2, which conditioned variations of plasmonic peak in the region of relative tissue transparency (670-700 nm). The degree of NP oxidation depended on the solvent, with much stronger oxidation for NPs prepared in aqueous solutions (especially in H2O2), while the ablation in organic solvents resulted in a partial formation of titanium carbides as by-products. The obtained results contribute to better understanding of the processes in reactive PLAL and can be used to design TiN NPs with desired properties for biomedical applications.

Topological phase singularities in atomically thin high-refractive-index materials.

Atomically thin transition metal dichalcogenides (TMDCs) present a promising platform for numerous photonic applications due to excitonic spectral features, possibility to tune their constants by external gating, doping, or light, and mechanical stability. Utilization of such materials for sensing or optical modulation purposes would require a clever optical design, as by itself the 2D materials can offer only a small optical phase delay - consequence of the atomic thickness. To address this issue, we combine films of 2D semiconductors which exhibit excitonic lines with the Fabry-Perot resonators of the standard commercial SiO2/Si substrate, in order to realize topological phase singularities in reflection. Around these singularities, reflection spectra demonstrate rapid phase changes while the structure behaves as a perfect absorber. Furthermore, we demonstrate that such topological phase singularities are ubiquitous for the entire class of atomically thin TMDCs and other high-refractive-index materials, making it a powerful tool for phase engineering in flat optics. As a practical demonstration, we employ PdSe2 topological phase singularities for a refractive index sensor and demonstrate its superior phase sensitivity compared to typical surface plasmon resonance sensors.

Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors.

Ultrathin WS2 films are promising functional materials for electronic and optoelectronic devices. Therefore, their synthesis over a large area, allowing control over their thickness and structure, is an essential task. In this work, we investigated the influence of atomic layer deposition (ALD)-grown WO3 seed-film thickness on the structural and electrical properties of WS2 nanosheets obtained via a sulfurization technique. Transmission electron microscopy indicated that the thinnest (1.9 nm) film contains rather big (up to 50 nm) WS2 grains in the amorphous matrix. The signs of incomplete sulfurization, namely, oxysulfide phase presence, were found by X-ray photoemission spectroscopy analysis. The increase in the seed-film thickness of up to 4.7 nm resulted in a visible grain size decrease down to 15-20 nm, which was accompanied by defect suppression. The observed structural evolution affected the film resistivity, which was found to decrease from ∼106 to 103 (µΩ·cm) within the investigated thickness range. These results show that the thickness of the ALD-grown seed layer may strongly affect the resultant WS2 structure and properties. Most valuably, it was shown that the growth of the thinnest WS2 film (3-4 monolayers) is most challenging due to the amorphous intergrain phase formation, and further investigations focused on preventing the intergrain phase formation should be conducted.

Broadband Optical Properties of Atomically Thin PtS2 and PtSe2.

Noble transition metal dichalcogenides (TMDCs) such as PtS2 and PtSe2 show significant potential in a wide range of optoelectronic and photonic applications. Noble TMDCs, unlike standard TMDCs such as MoS2 and WS2, operate in the ultrawide spectral range from ultraviolet to mid-infrared wavelengths; however, their properties remain largely unexplored. Here, we measured the broadband (245-3300 nm) optical constants of ultrathin PtS2 and PtSe2 films to eliminate this gap and provide a foundation for optoelectronic device simulation. We discovered their broadband absorption and high refractive index both theoretically and experimentally. Based on first-principle calculations, we also predicted their giant out-of-plane optical anisotropy for monocrystals. As a practical illustration of the obtained optical properties, we demonstrated surface plasmon resonance biosensors with PtS2 or PtSe2 functional layers, which dramatically improves sensor sensitivity by 60 and 30%, respectively.

Optical Constants and Structural Properties of Epitaxial MoS2 Monolayers.

Two-dimensional layers of transition-metal dichalcogenides (TMDs) have been widely studied owing to their exciting potential for applications in advanced electronic and optoelectronic devices. Typically, monolayers of TMDs are produced either by mechanical exfoliation or chemical vapor deposition (CVD). While the former produces high-quality flakes with a size limited to a few micrometers, the latter gives large-area layers but with a nonuniform surface resulting from multiple defects and randomly oriented domains. The use of epitaxy growth can produce continuous, crystalline and uniform films with fewer defects. Here, we present a comprehensive study of the optical and structural properties of a single layer of MoS2 synthesized by molecular beam epitaxy (MBE) on a sapphire substrate. For optical characterization, we performed spectroscopic ellipsometry over a broad spectral range (from 250 to 1700 nm) under variable incident angles. The structural quality was assessed by optical microscopy, atomic force microscopy, scanning electron microscopy, and Raman spectroscopy through which we were able to confirm that our sample contains a single-atomic layer of MoS2 with a low number of defects. Raman and photoluminescence spectroscopies revealed that MBE-synthesized MoS2 layers exhibit a two-times higher quantum yield of photoluminescence along with lower photobleaching compared to CVD-grown MoS2, thus making it an attractive candidate for photonic applications.

Optical Constants of Chemical Vapor Deposited Graphene for Photonic Applications.

Graphene is a promising building block material for developing novel photonic and optoelectronic devices. Here, we report a comprehensive experimental study of chemical-vapor deposited (CVD) monolayer graphene's optical properties on three different substrates for ultraviolet, visible, and near-infrared spectral ranges (from 240 to 1000 nm). Importantly, our ellipsometric measurements are free from the assumptions of additional nanometer-thick layers of water or other media. This issue is critical for practical applications since otherwise, these additional layers must be included in the design models of various graphene photonic, plasmonic, and optoelectronic devices. We observe a slight difference (not exceeding 5%) in the optical constants of graphene on different substrates. Further, the optical constants reported here are very close to those of graphite, which hints on their applicability to multilayer graphene structures. This work provides reliable data on monolayer graphene's optical properties, which should be useful for modeling and designing photonic devices with graphene.

Band Excitation Piezoresponse Force Microscopy Adapted for Weak Ferroelectrics: On-the-Fly Tuning of the Central Band Frequency.

New interest in microscopic studies of ferroelectric materials with low piezoelectric coefficient, $d_{33}^\ast$, has emerged after the discovery of ferroelectric properties in HfO2 thin films, which are the main candidate for the next generation of nonvolatile ferroelectric memory. The study of the microscopic structure of ferroelectric HfO2 capacitors is crucial to get insights into the device behavior and performance. However, a small $d_{33}^\ast$ of ferroelectric HfO2 films leads to a low piezoresponse, especially in band excitation piezoresponse force microscopy (BE-PFM). In this work, we have implemented the BE-PFM technique with an increased scanning rate, thus improving this versatile tool for weak ferroelectrics. The acceleration of measurement was achieved by focusing excitation into a narrow frequency band and tuning the central frequency on-the-fly using an online real-time model estimation by fitting a complex BE response. The tracking of the contact resonance frequency was implemented using a pure mechanical cantilever response acquired in BE atomic force acoustic microscopy. To obtain optimal excitation parameters, we perform statistical analysis by minimizing estimator variance. The measurement precision of several PFM techniques was compared both by the simulation and experimentally using a Hf0.5Zr0.5O2-based ferroelectric capacitor.

Microplotter printing of planar solid electrolytes in the CeO2-Y2O3 system.

The formation process for planar solid electrolytes in the CeO2-Y2O3 system has been studied using efficient, high-performance, high-resolution microplotter printing technology, using functional ink based on nanopowders (the average size of crystallites was 12-15 nm) of a similar composition obtained by programmed coprecipitation of metal hydroxides. The dependence of the microstructure of the oxide nanoparticles obtained and their crystal structure on yttrium concentration has been studied using a wide range of methods. According to X-ray diffraction (XRD), the nanopowders and coatings produced are single-phase, with a cubic crystal structure of the fluorite type, and the electronic state and content of cerium and yttrium in the printed coatings have been determined using X-ray photoelectron spectroscopy (XPS). The results of scanning electron (SEM) and atomic force microscopy (AFM) have shown that the coatings produced are homogeneous, they do not contain defects in the form of fractures and the height difference over an area of 1 µm2 is 30-45 nm. The local electrophysical characteristics of the oxide coatings produced (the work function of the coating surface, capacitance values, maps of the surface potential and capacitive contrast distribution over the surface) have been studied using Kelvin-probe force microscopy (KPFM) and scanning capacitive microscopy (SCM). Using impedance spectroscopy, the dependence of the electrophysical characteristics of printed planar solid electrolytes in the CeO2-Y2O3 system on yttrium content has been determined and the prospects of the technology developed for the manufacture of modern, intermediate-temperature, solid oxide fuel cells have been demonstrated.

Nanoscale Tailoring of Ferroelectricity in a Thin Dielectric Film.

New opportunities in the development and commercialization of novel photonic and electronic devices can be opened following the development of technology-compatible arbitrary-shaped ferroelectrics encapsulated in a passive environment. Here, we report and experimentally demonstrate nanoscale tailoring of ferroelectricity by an arbitrary pattern within the nonferroelectric thin film. For inducing the ferroelectric nanoregions in the nonferroelectric surrounding, we developed a technology-compatible approach of local doping of a thin (10 nm) HfO2 film by Ga ions right in the thin-film capacitor device via focused ion beam implantation. Local crystallization of the doped regions to the ferroelectric structural phase occurs during subsequent annealing. The remnant polarization of the HfO2:Ga regions reached 13 µC/cm2 at a Ga concentration of 0.6 at. %. Piezoresponse force microscopy over the capacitor device revealed an asymmetrical switching of ferroelectric domains within written HfO2:Ga patterns after capacitor switching, which was attributed to the mechanical stress across the doped film. The lateral spatial resolution of ferroelectricity tailoring is found to be ∼200 nm, which enables diverse applications in switchable photonics and microelectronic memories.

Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures.

Resistive switching (RS) device behavior is highly dependent on both insulator and electrode material properties. In particular, the bottom electrode (BE) surface morphology can strongly affect RS characteristics. In this work, Ru films with different thicknesses grown on a TiN layer by radical-enhanced atomic layer deposition (REALD) are used as an inert BE in TaOx-based RS structures. The REALD Ru surface roughness is found to increase by more than 1 order of magnitude with the increase in the reaction cycle number. Simultaneously, a wide range of RS parameters, such as switching voltage, resistance both in low and high resistance states, endurance, and so forth, monotonically change. A simplified model is proposed to explain the linkage between RS properties and roughness of the Ru surface. The field distribution was simulated based on the observed surface morphologies, and the resulting conducting filament formation was anticipated based on the local field enhancement. Conductive atomic force microscopy confirmed the theoretical expectations.

Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2.

This work demonstrates by in vacuo X-ray photoelectron spectroscopy and grazing-incidence X-ray diffraction that Ru(EtCp)2 and O* radical-enhanced atomic layer deposition, where EtCp means the ethylcyclopentadienyl group, provides the growth of either RuO2 or Ru thin films depending on the deposition temperature (Tdep), while different mechanisms are responsible for the growth of RuO2 and Ru. The thin films deposited at temperatures ranging from 200 to 260 °C consisted of polycrystalline rutile RuO2 phase revealing, according to atomic force microscopy and the four-point probe method, a low roughness (∼1.7 nm at 15 nm film thickness) and a resistivity of ≈83 µΩ cm. This low-temperature RuO2 growth was based on Ru(EtCp)2 adsorption, subsequent ligand removal, and Ru oxidation by active oxygen. The clear saturative behavior with regard to the precursor and reactant doses and each purge time, as well as the good step coverage of the film growth onto 3D structures, inherent to genuine surface-controlled atomic layer deposition, were confirmed for the lowest Tdep of 200 °C. However, at Tdep = 260 °C, a competition between film growth and etching was found, resulted in not-saturative growth. At higher deposition temperatures (300-340 °C), the growth of metallic Ru thin films with a resistivity down to ≈12 µΩ cm was demonstrated, where the film growth was proved to follow a combustion mechanism known for molecular oxygen-based Ru growth processes. However, this process lacked the truly saturative growth with regard to the precursor and reactant doses due to the etching predominance.