Synthesis, microstructural and optical characterizations of sol-gel grown gadolinium doped cerium oxide ceramics.

In this study, through the utilization of the sol-gel combustion tactic, gadolinium (Gd)-doped cerium oxide (CeO2), Ce1-xGdxO2 (x = 0.00, 0.10, 0.20 and 0.30 (GDC)) ceramics were attained. The synthesized GDC ceramics were investigated using X-ray diffraction (XRD) to scrutinize their crystal structures and phase clarities. The obtained GDC ceramics have a single-phase cubic structure and belong to the crystallographic space group fm3̄m (225). The measurement of the diffraction angle of each reflection and the subsequent smearing of the renowned Bragg's relation provided coarse d-interplanar spacings. The stacking fault (SF) values of pure and Gd-doped CeO2 ceramics were assessed. To muse the degree of preferred orientation (σ) of crystallites along a crystal plane (h k l), the texture coefficient (Ci) of each XRD peak of GDC ceramics is gauged. By determining the interplanar distance (dh k l), the Bravais theory sheds light on the material's development. By exploiting Miller indices for the prime (1 1 1) plane, the lattice constants of GDC ceramics and cell volumes were obtained. Multiple techniques were employed to ascertain the microstructural parameters of GDC ceramics. A pyrometer substantiated the density of GDC ceramics. The room temperature (RT) Fourier transform infrared (FTIR) spectra of both un-doped and Gd-doped CeO2 were obtained. The UV-vis-NIR spectrometer recorded the GDC ceramics' reflectance (R) spectra at RT. For both undoped and Gd-doped CeO2, the absorption coefficient (α) spectra showed two distinct peaks. The R-dependent refractive index (η) and the α-dependent extinction coefficient (k) were determined for all GDC samples. The optical band gap (Eg) was obtained by integrating the Tauc and Kubelka-Munk approaches for GDC ceramics. For each GDC sample, the imaginary (εi) and real (εr) dielectric constants, as well as the dissipation factor (tan δ), were determined local to the characteristic wavelength (λc). Calculations were made for the Urbach energy (EU) and Urbach absorption coefficient (α0) for GDC ceramics. The minimum and maximum values of optical (σo) and electrical (σe) conductivity for GDC ceramics were determined. The volume (VELF) and surface (SELF) energy loss functions, which depend on the constants εi and εr, were used to measure electrons' energy loss rates as they travel across the surface. Raman spectroscopy revealed various vibrational modes in GDC ceramics. Finally, the implications are discussed herein.

Nano-engineering by implanting Al2O3 nano particle as sandwiched scattering centers in between the Lao.5Pr0.2Sr0.3MnO3 thin film layers.

We report the use of non-magnetic Al2O3 nano particles deposited between two ferromagnetic La0.5Pr0.2Sr0.3MnO3 (LPSMO) manganite layers with an aim to improve the electronic and magnetotransport properties of the layered supper lattice grown on single crystal STO(100) substrate using Pulsed Laser Deposition (PLD) technique. We studied the electronic-transport and magnetotransport properties of this system wherein Al2O3 particles are expected to act as insulating scattering centers between two ferromagnetic LPSMO layers. The scattering due to additional scattering centers (insulating Al2O3 nano particles) could be controlled by application of external field, resulting in high magnetoresistance (MR) approximately 72% as compared to pristine LPSMO film (MR approximately 51%) at temperature close to their T(M) values. In addition, incorporation of nanostructured Al2O3 barrier between the two ferromagnetic LPSMO layers results in a 2-3 fold increase in the values of temperature coefficient of resistance (TCR) and the field coefficient of resistance (FCR) as compared to pristine LPSMO film, suggesting the use of such nanoengineered manganite layered structure for better device application.

Grain size dependent transport and magnetoresistance behavior of chemical solution deposition grown nanostructured La0.7Sr0.3MnO3 manganite films.

Grain-size dependence of electronic transport and magnetoresistance (MR) properties of nanostructured La0.7Sr0.3MnO3 (LSMO) manganite thin films on LaAlO3 (100) single crystal substrates prepared using Chemical Solution Deposition (CSD) technique have been studied. The LSMO thin films were annealed at temperatures in the range of 700-1000 degrees C for different time intervals [6 h and 12 h] and crystallized as singlephase LSMO. Microstructural studies carried out using AFM show a marginal increase in the grain-size from 50 to 90 nm as the temperature was varied from 700 degrees C to 1000 degrees C respectively. It has been observed that the insulator-metal transition (T(p)) and MR depend on the grain size. In zero applied field, resistivity reduction is approximately 10(3) at 5 K for the films annealed at 700 degrees C [T(p) approximately 341 K] and 1000 degrees C [T(p) approximately 373 K]. MR versus H isotherms reveal that MR enhances in the vicinity of T(p) but decreases at low temperatures. The results obtained from the electronic and magnetotransport studies are in good agreement with the change in surface morphology of the films studied, which shows that the randomly distributed domains are composed of faceted grains. Synthesizing conditions, annealing temperature and time control the growth and alignment of grains into the domains, which cause better conduction at grain interface.