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Phys Rev E ; 103(4-1): 043202, 2021 Apr.
Article in English | MEDLINE | ID: mdl-34005965

ABSTRACT

The Hartree-Fock equations for many-electron atoms embedded in a plasma medium are solved using two different plasma models: (a) Debye-Hückel screening (DHS) potential and (b) exponential cosine screened Coulomb (ECSC) potential. Roothaan's approach is implemented for these models after solving the inherent difficulties to evaluate integrals where screening appears explicitly. A corresponding computer code was developed using the method of global basis sets (GBS). The reliability of this approach was verified by solving the Hartree-Fock equations through implementation of the finite-differences and finite-element grid methods and applied to two-electron atoms, yielding excellent agreement with the Roothaan-GBS (RGBS) method. The RGBS method was used to study the energy evolution and ionization threshold of several closed- and open-shell many-electron atoms embedded either in weak or strong DHS or ECSC plasma conditions. In all cases, a critical value of the screening length is obtained for which ionization is achieved, being systematically larger for DHS conditions, indicating the effect of a more repulsive ECSC potential. For He-like atoms in the ground state, we report a comprehensive set of accurate total energy data as a function of the screening constant using the Lagrange mesh method, which includes the electron correlation effects. The electron correlation energy is estimated using this data with reference to the RGBS estimates of energy as the Hartree-Fock energy. The variation of correlation energy as a function of screening constant under the different plasma potentials is rationalized in terms of a conjectured comparison theorem. Finally, a discussion on the effect of plasma strength on localization or delocalization of the electronic density derived from the RGBS method is presented in terms of changes in the Shannon entropy, yielding consistent results for delocalization close to the ionization threshold.

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