Local Measurement of Janus Particle Cap Thickness.

Janus particles have anisotropy in surface chemistry or composition that will effect dynamics and interactions with neighboring surfaces. One specific type of Janus particle is that consisting of a native micrometer-scale particle with a cap of gold, platinum, or another metal deposited with a typical thicknesses of ∼10 nm. A key characteristic of metal-capped Janus particles prepared with glancing angle deposition is the cap thickness. The nominal thickness is usually assumed to be uniform across the cap for modeling or interpretation of data, but the vapor deposition fabrication process likely does not produce such a cap because of the particle's curvature. These nonuniformities in the cap thickness may have a profound impact on Janus particle dynamics at equilibrium and in response to external fields. Herein, we summarize an experimental technique that utilizes focused ion beam slicing, image analysis, and results for the direct and local measure of cap thickness for 5 µm polystyrene spheres with a gold cap of nominal thicknesses of 10 or 20 nm. We found the cap varied in thickness continuously along the perimeter of the particle and also that the deposition rate, varying between 0.5 and 2.0 Å/s, did not significantly alter the way in which the thickness varied. These data support the hypothesis that cap thickness of a Janus sphere will vary across the gold surface contour, while demonstrating a feasible route for direct measurement of Janus particle cap thickness.

Organofunctional Silane Modification of Aluminum-Doped Zinc Oxide Surfaces as a Route to Stabilization.

Aluminum-doped zinc oxide (AZO) is a low-temperature processed transparent conductive oxide (TCO) made of earth abundant elements; its applications are currently limited by instability to heat, moisture, and acidic conditions. We demonstrate that the application of an organofunctional silane modifier mitigates AZO degradation and explore the interplay between performance and material composition and morphology. Specifically, we evaluate degradation of bare AZO and APTES (3-aminopropyltriethoxysilane)-modified AZO in response to damp heat (DH, 85 °C, 85% relative humidity) exposure over 1000 h and then demonstrate how surface modification impacts changes in electrical and optical properties and chemical composition in one of the most thorough studies to date. Hall measurements show that the resistivity of AZO increases due to a decrease in electron mobility, with no commensurate change in carrier concentration. APTES decelerates this electrical degradation, without affecting AZO optical properties. Percent transmission and yellowness index of an ensemble of bare and modified AZO are stable upon DH exposure, but haze increases slightly for a discrete sample of modified AZO. Atomic force microscopy (AFM) and optical profilometer (OP) measurements do not show evidence of pitting or delamination after 1000 h DH exposure but indicate a slight increase in surface roughness on both the nanometer and micrometer length scales. X-ray photoelectron spectroscopy data (XPS) reveal that the surface composition of bare and silanized AZO is stable over this time frame; oxygen vacancies, as measured by XPS, are also stable with DH exposure, which, together with transmission and Hall measurements, indicate stable carrier concentrations. However, after 1500 h of DH exposure, only bare AZO shows signs of catastrophic destruction. Comparison of the data presented herein to previous reports indicates that the initial AZO composition and microstructure dictate the degradation profile. This work demonstrates that surface modification slows the bulk degradation of AZO and provides insight into how the material can be more widely used as a transparent electrode in the next generation of optoelectronic devices.

Angle-resolved XPS analysis and characterization of monolayer and multilayer silane films for DNA coupling to silica.

We measure silane density and Sulfo-EMCS cross-linker coupling efficiency on aminosilane films by high-resolution X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements. We then characterize DNA immobilization and hybridization on these films by (32)P-radiometry. We find that the silane film structure controls the efficiency of the subsequent steps toward DNA hybridization. A self-limited silane monolayer produced from 3-aminopropyldimethylethoxysilane (APDMES) provides a silane surface density of ~3 nm(-2). Thin (1 h deposition) and thick (19 h deposition) multilayer films are generated from 3-aminopropyltriethoxysilane (APTES), resulting in surfaces with increased roughness compared to the APDMES monolayer. Increased silane surface density is estimated for the 19 h APTES film, due to a ∼32% increase in surface area compared to the APDMES monolayer. High cross-linker coupling efficiencies are measured for all three silane films. DNA immobilization densities are similar for the APDMES monolayer and 1 h APTES. However, the DNA immobilization density is double for the 19 h APTES, suggesting that increased surface area allows for a higher probe attachment. The APDMES monolayer has the lowest DNA target density and hybridization efficiency. This is attributed to the steric hindrance as the random packing limit is approached for DNA double helices (dsDNA, diameter ≥ 2 nm) on a plane. The heterogeneity and roughness of the APTES films reduce this steric hindrance and allow for tighter packing of DNA double helices, resulting in higher hybridization densities and efficiencies. The low steric hindrance of the thin, one to two layer APTES film provides the highest hybridization efficiency of nearly 88%, with 0.21 dsDNA/nm(2). The XPS data also reveal water on the cross-linker-treated surface that is implicated in device aging.

High-resolution X-ray photoelectron spectroscopy of mixed silane monolayers for DNA attachment.

The amine density of 3-aminopropyldimethylethoxysilane (APDMES) films on silica is controlled to determine its effect on DNA probe density and subsequent DNA hybridization. The amine density is tailored by controlling the surface reaction time of (1) APDMES, or (2) n-propyldimethylchlorosilane (PDMCS, which is not amine terminated) and then reacting it with APDMES to form a mixed monolayer. High-resolution X-ray photoelectron spectroscopy (XPS) is used to quantify silane surface coverage of both pure and mixed monolayers on silica; the XPS data demonstrate control of amine density in both pure APDMES and PDMCS/APDMES mixed monolayers. A linear correlation between the atomic concentration of N atoms from the amine and Si atoms from the APDMES in pure APDMES films allows us to calculate the PDMCS/APDMES ratio in the mixed monolayers. Fluorescence from attached DNA probes and from hybridized DNA decreases as the percentage of APDMES in the mixed monolayer is decreased by dilution with PDMCS.

Controlled nitrogen doping and film colorimetrics in porous TiO2 materials using plasma processing.

Nitrogen doping of TiO(2) films (N:TiO(2)) has been shown to improve the visible-light sensitivity of TiO(2), thereby increasing the performance of both photovoltaic and photocatalytic devices. Inductively coupled rf plasmas containing a wide range of nitrogen precursors were used to create nitrogen-doped TiO(2) films. These treatments resulted in anatase-phased materials with as high as 34% nitrogen content. As monitored with high-resolution X-ray photoelectron spectroscopy spectra, the nitrogen binding environments within the films were controlled by varying the plasma processing conditions. XPS peak assignments for multiple N 1s binding environments were made based on high resolution Ti 2p and O 1s XPS spectra, Fourier transform infrared spectroscopy (FTIR) data, and literature N 1s XPS peak assignments. The N:TiO(2) films produced via plasma treatments displayed colors ranging from gray to brown to blue to black, paralleling the N/Ti ratios of the films. Three possible mechanisms to explain the color changes in these materials are presented.

On the importance of ions and ion-molecule reactions to plasma-surface interface reactions.

Ions are known to be key players in many plasma processes, including anisotropic etching, film deposition and surface modification. The relationship between plasma ions, film properties, and surface interactions of other plasma species is not, however, well known. Using our Imaging of Radicals Interacting with Surfaces (IRIS) technique, along with plasma ion mass spectrometry (PI-MS), and surface analysis data, we have measured the effects of ion bombardment on the surface interactions of SiF2 in SiF4 plasmas and of CF2 in C3F8 and C4F8 plasmas. SiF2 is a known product of F-atom etching of Si, and CF2 has also been cited as a product of fluorocarbon etching of Si. With both molecules, we measure surface generation when the surface is bombarded by all the plasma species. Removal of ions from the plasma molecular beam results in a net decrease in surface generation for both molecules at all powers. Results in both systems are compared with the gas-phase ion-molecule reaction data of Armentrout and coworkers. Preliminary guided-ion beam mass spectrometry results taken in the Armentrout laboratories for the Ar+ + C3F8 reaction system are also presented.