1.
Adv Mater
; 28(36): 7978-7983, 2016 Sep.
Article
in English
| MEDLINE
| ID: mdl-27383739
ABSTRACT
Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron-beam excitation. This device is promising and competitive in non-line-of-sight communications or the sterilization field.