Design of integrated silicon waveguides for Raman-enhanced four-wave mixing in the telecom band.

Silicon planar waveguides are designed to maximize the wavelength conversion efficiency via the use of Raman-enhanced four-wave mixing in the telecom band. By investigating the dispersion properties of various rib waveguide structures, the optimum etch depth and width are selected to obtain efficient phase-matching for a continuous-wave pump at 1545 nm. The design benefits from good fabrication tolerance in the structural parameters, which are well within the precision of standard lithography and etching processes. Using the optimized waveguides, simulations show that it is possible to reach conversion efficiencies as high as ∼45 dB for waveguide lengths as short as 4.6 cm, with a pump power of only 130 mW. This enhancement in the conversion efficiency is about 50 dB higher than conventional values for FWM in integrated silicon photonic systems, highlighting the benefits of exploiting the coupling between the two nonlinear processes.

Enhanced stimulated Brillouin scattering in the unsuspended silicon waveguide assisted with genetic algorithms.

Stimulated Brillouin scattering (SBS), originating from the coupling between optical and acoustic waves, has been widely applied in many fields. Silicon is the most used and important material in micro-electromechanical systems (MEMS) and integrated photonic circuits. However, strong acoustic-optic interaction in silicon requires mechanical release of the silicon core waveguide to avoid acoustic energy leakage into the substrate. This will not only reduce the mechanical stability and thermal conduction, but also increase the difficulties for fabrication and large-area device integration. In this paper, we propose a silicon-aluminium nitride(AlN)-sapphire platform for realizing large SBS gain without suspending the waveguide. AlN is used as a buffer layer to reduce the phonon leakage. This platform can be fabricated via the wafer bonding between silicon and commercial AlN-sapphire wafer. We adopt a full-vectorial model to simulate the SBS gain. Both the material loss and the anchor loss of the silicon are considered. We also apply the genetic algorithm to optimize the waveguide structure. By limiting the maximum etching step number to two, we obtain a simple structure to achieve the SBS gain of 2462 W-1m-1 for forward SBS, which is 8 times larger than the recently reported result in unsuspended silicon waveguide. Our platform can enable Brillouin-related phenomena in centimetre-scale waveguides. Our findings could pave the way toward large-area unreleased opto-mechanics on silicon.

Near-IR & Mid-IR Silicon Photonics Modulators.

As the silicon photonics field matures and a data-hungry future looms ahead, new technologies are required to keep up pace with the increase in capacity demand. In this paper, we review current developments in the near-IR and mid-IR group IV photonic modulators that show promising performance. We analyse recent trends in optical and electrical co-integration of modulators and drivers enabling modulation data rates of 112 GBaud in the near infrared. We then describe new developments in short wave infrared spectrum modulators such as employing more spectrally efficient PAM-4 coding schemes for modulations up to 40 GBaud. Finally, we review recent results at the mid infrared spectrum and application of the thermo-optic effect for modulation as well as the emergence of new platforms based on germanium to tackle the challenges of modulating light in the long wave infrared spectrum up to 10.7 µm with data rates of 225 MBaud.

Tailorable stimulated Brillouin scattering in a partially suspended aluminium nitride waveguide in the visible range.

Stimulated Brillouin scattering (SBS) has been widely applied in narrow line-width laser, microwave filters, optical gyroscopes, and other fields. However, most research is limited within near-infrared to mid-infrared range. This is due to the limited transparent window in most materials, such as silicon and germanium. Aluminium nitride (AlN) is a novel III-V material with a wide transparent window from 200 nm and an appropriate refractive index to confine the light. In this paper, we first validate the full-vectorial formalism to calculate SBS gain based on the measured results from a silicon platform. Compared to previous research, our model achieves higher accuracy in terms of frequency, Q factor, as well as Brillouin gain coefficient without modifying the waveguide width. It also reveals the importance of matching rotation matrix and crystalline coordinate system. Then, we investigate the SBS in a partially suspended AlN waveguide at 450 nm based on the validated method. It shows a wide tunability in frequency from 16 GHz to 32 GHz for forward SBS and a range from 42 GHz to 49 GHz for backward SBS. We numerically obtain the value of Brillouin gain of 1311 W-1m-1 when Q factor is dominated by anchor loss for forward SBS of transverse electric mode. We also find out that in the case for forward SBS of transverse-magnetic mode, anchor loss could be greatly suppressed when the node point of the selected acoustic mode matches with the position of pillar anchor. Our findings, to the best of our knowledge, pave a new way to obtain Brillouin-related applications in integrated photonic circuit within the visible range.

Raman enhanced four-wave mixing in silicon core fibers.

A strong Raman enhancement to the four-wave mixing (FWM) conversion efficiency is obtained in a silicon core fiber (SCF) when pumped with a continuous-wave (CW) source in the telecom band. By tapering the SCFs to alter the core diameter and length, the role of phase-matching on the conversion enhancement is investigated, with a maximum Raman enhancement of ∼15 dB obtained for an SCF with a zero dispersion wavelength close to the pump. Simulations show that by optimizing the tapered waist diameter to overlap the FWM phase-matching with the peak Raman gain, it is possible to obtain large Raman enhanced FWM conversion efficiencies of up to ∼2 dB using modest CW pump powers over wavelengths covering the extended telecom bands.

Broadband 2 × 2 multimode interference coupler for mid-infrared wavelengths.

Beam splitters are core components of photonic integrated circuits and are often implemented with multimode interference couplers. While these devices offer high performance, their operational bandwidth is still restrictive for sensing applications in the mid-infrared wavelength range. Here we experimentally demonstrate a subwavelength-structured 2×2 multimode interference coupler with high performance in the 3.1-3.7µm range, doubling the bandwidth of a conventional device.

The Effect of Haematocrit on Measurement of the Mid-Infrared Refractive Index of Plasma in Whole Blood.

Recent advances suggest that miniaturised mid-infrared (MIR) devices could replace more time-consuming, laboratory-based techniques for clinical diagnostics. This work uses Fourier transform infrared spectroscopy to show that the MIR complex refractive index of whole blood varies across a range of haematocrit. This indicates that the use of an evanescent measurement is not sufficient to optically exclude the cellular content of blood in the MIR, as previously assumed. Here, spectral refractive index data is presented in two ways. First, it is given as whole blood with varying haematocrit. Second, it is given as the percentage error that haematocrit introduces to plasma. The maximum error in the effective plasma refractive index due to the haematocrit of healthy adults was 0.25% for the real part n and 11% for the imaginary part k. This implies that calibration measurements of haematocrit can be used to account for errors introduced by the cellular content, enabling plasma spectra and analyte concentrations to be indirectly calculated from a whole blood sample. This methodological advance is of clinical importance as plasma concentration of analytes such as drugs can be determined using MIR without the preprocessing of whole blood.

Thick BaTiO3 Epitaxial Films Integrated on Si by RF Sputtering for Electro-Optic Modulators in Si Photonics.

Thick epitaxial BaTiO3 films ranging from 120 nm to 1 µm were grown by off-axis RF magnetron sputtering on SrTiO3-templated silicon-on-insulator (SOI) substrates for use in electro-optic applications, where such large thicknesses are necessary. The films are of high quality, rivaling those grown by molecular beam epitaxy (MBE) in crystalline quality, but can be grown 10 times faster. Extraction of lattice parameters from geometric phase analysis of atomic-resolution scanning transmission electron microscopy images revealed how the in-plane and out-of-plane lattice spacings of sputtered BaTiO3 changes as a function of layer position within a thick film. Our results indicate that compared to molecular beam epitaxy, sputtered films retain their out-of-plane polarization (c-axis) orientation for larger thicknesses. We also find an unusual re-transition from in-plane polarization (a-axis) to out-of-plane polarization (c-axis), along with an anomalous lattice expansion, near the surface. We also studied a method of achieving 100% a-axis-oriented films using a two-step process involving amorphous growth and recrystallization of a seed layer followed by normal high temperature growth. While this method is successful in achieving full a-axis orientation even at low thicknesses, the resulting film has a large number of voids and misoriented grains. Electro-optic measurement using a transmission setup of a sputtered BTO film grown using the optimized conditions yields an effective Pockels coefficient as high as 183 pm/V. A Mach-Zehnder modulator fabricated on such films exhibits phase shifting with an equivalent Pockels coefficient of 157 pm/V. These results demonstrate that sputtered BTO thick films can be used for integrated electro-optic modulators for Si photonics.

Theory analysis of the optical mode localized sensing based on coupled ring resonators.

Based on Mason's signal flow graph analysis, an analytical model of the optical mode localization based on coupled ring resonators is established. The correctness of the theoretical model is proved by simulation. High sensitivity and common-mode rejection can be achieved by evaluating the modal power ratio from resonant peaks as sensing output. Based on the four-port structure, two output spectrum with mode localization (asymmetric mode splitting) and symmetric mode splitting allows the high-sensitivity sensing and dual-channel calibration to be carried out simultaneously, which can reduce the sensing errors. Monte-Carlo analysis showed that fabrication imperfection changes less than 6% of the performance in 90% cases, thus the construction of practical sensors is possible with appropriate tuning. The optical mode localized sensing has advantages in sensitivity, accuracy, anti-aliasing compared with conventional micro-mechanical mode localized sensor. Various types of high-sensitive sensor can be constructed through coupling parametric perturbation with measurands in different physical domains.

Suspended germanium waveguides with subwavelength-grating metamaterial cladding for the mid-infrared band.

In recent years, sensing and communication applications have fueled important developments of group-IV photonics in the mid-infrared band. In the long-wave range, most platforms are based on germanium, which is transparent up to ∼15-µm wavelength. However, those platforms are limited by the intrinsic losses of complementary materials or require complex fabrication processes. To overcome these limitations, we propose suspended germanium waveguides with a subwavelength metamaterial lateral cladding that simultaneously provides optical confinement and allows structural suspension. These all-germanium waveguides can be fabricated in one dry and one wet etch step. A propagation loss of 5.3 dB/cm is measured at a wavelength of 7.7 µm. These results open the door for the development of integrated devices that can be fabricated in a simple manner and can potentially cover the mid-infrared band up to ∼15 µm.

High-speed silicon Michelson interferometer modulator and streamlined IMDD PAM-4 transmission of Mach-Zehnder modulators for the 2 µm wavelength band.

We demonstrate high-speed silicon modulators optimized for operating at the wavelength of 2 µm. The Mach-Zehnder interferometer (MZI) carrier-depletion modulator with 2 mm phase shifter has a single-arm modulation efficiency (Vπ ·Lπ) of 2.89 V·cm at 4 V reverse bias. Using a push-pull configuration it operates at a data rate of 25 Gbit/s OOK with an extinction ratio of 6.25 dB. We also proposed a mathematically-analysed streamlined IMDD PAM-4 scheme and successfully demonstrated a 25 Gbit/s datarate PAM-4 with the same 2 mm modulator. A Michelson interferometer carrier-depletion modulator with 0.5 mm phase shift length has also been shown with modulation efficiency (Vπ ·Lπ) of 1.36 V·cm at 4 V reverse bias and data rate of 20 Gbit/s OOK. The Michelson interferometer modulator performs similarly to a Mach-Zehnder modulator with twice the phase shifter length.

Nanometallic antenna-assisted amorphous silicon waveguide integrated bolometer for mid-infrared.

Bolometers are thermal detectors widely applied in the mid-infrared (MIR) wavelength range. In an integrated sensing system on chip, a broadband scalable bolometer absorbing the light over the whole MIR wavelength range could play an important role. In this work, we have developed a waveguide-based bolometer operating in the wavelength range of 3.72-3.88 µm on the amorphous silicon (a-Si) platform. Significant improvements in the bolometer design result in a 20× improved responsivity compared to earlier work on silicon-on-insulator (SOI). The bolometer offers 24.62% change in resistance per milliwatt of input power at 3.8 µm wavelength. The thermal conductance of the bolometer is 3.86×10-5W/K, and an improvement as large as 3 orders magnitude may be possible in the future through redesign of the device geometry.

Performance analysis of a silicon NOEMS device applied as an optical modulator based on a slot waveguide.

In this paper, we analyse the performance of a silicon nano-opto-electro-mechanical system (NOEMS) applied as an optical modulator, based on a suspended slot waveguide driven by electrostatic forces. The analysis is carried out with the help of the finite element analysis (FEA) method involving the influences from Casimir force, optical force and electrostatic force. The performance of the modulator are analysed from aspects of actuating modes, actuating voltage, modulating frequency, effective index, phase change, and energy consumption using the FEA method. Simulation results show that a suspended slot modulator has the advantages of low actuation voltage, low power consumption, as well as large effective index and phase change compared with modulators based upon other approaches. The performance of such a modulator can fill the performance gap between the carrier-based approach and micro-opto-electro-mechanical system (MOEMS) approach for modulation.

Ge on Si waveguide mid-infrared absorption spectroscopy of proteins and their aggregates.

Specific proteins and their aggregates form toxic amyloid plaques and neurofibrillary tangles in the brains of people suffering from neurodegenerative diseases such as Alzheimer's and Parkinson's. It is important to study these conformational changes to identify and differentiate these diseases at an early stage so that timely medication is provided to patients. Mid-infrared spectroscopy can be used to monitor these changes by studying the line-shapes and the relative absorbances of amide bands present in proteins. This work focusses on the spectroscopy of the protein, Bovine Serum Albumin as an exemplar, and its aggregates using germanium on silicon waveguides in the 1900-1000 cm-1 (5.3-10.0 µm) spectral region.

Perspective on Thin Film Waveguides for on-Chip Mid-Infrared Spectroscopy of Liquid Biochemical Analytes.

Miniaturized spectrometers offering low cost, low reagent consumption, high throughput, sensitivity and automation are the future of sensing and have significant applications in environmental monitoring, food safety, biotechnology, pharmaceuticals, and healthcare. Midinfrared (MIR) spectroscopy employing complementary metal oxide semiconductor (CMOS) compatible thin film waveguides and microfluidics shows great promise toward highly integrated and robust detection tools and liquid handling. This perspective provides an overview of the emergence of thin film optical waveguides used for evanescent field sensing of liquid chemical and biological samples for MIR absorption spectroscopy. The state of the art of new material and waveguide systems used for spectroscopic measurements in the MIR is presented. An outlook on the advantages and future of waveguide-based MIR spectroscopy for application in clinical settings for point-of-care biochemical analysis is discussed.

Waveguide Absorption Spectroscopy of Bovine Serum Albumin in the Mid-Infrared Fingerprint Region.

Protein sensing in biological fluids provides important information to diagnose many clinically relevant diseases. Mid-infrared (MIR) absorption spectroscopy of bovine serum albumin (BSA) is experimentally demonstrated on a germanium on silicon (GOS) waveguide in the 1900-1000 cm-1 (5.3-10.0 µm) region of the MIR. GOS waveguides were shown to guide light up to a wavelength of 12.9 µm. The waveguide absorption spectrum of water, showing molecular bending vibrations, was obtained experimentally and compared with a theoretical model showing good agreement. Measurement of a concentration series of BSA protein in phosphate buffered saline (PBS) from 0.1 mg/mL to 100 mg/mL was performed on the waveguide using filter paper as a flow strip, and the amide I, II, and III peaks were observed and quantified.

HWCVD a-Si:H interlayer slope waveguide coupler for multilayer silicon photonics platform.

We present interlayer slope waveguides, designed to guide light from one level to another in a multi-layer silicon photonics platform. The waveguide is fabricated from hydrogenated amorphous silicon (a-Si:H) film, deposited using hot-wire chemical vapor deposition (HWCVD) at a temperature of 230°C. The interlayer slope waveguide is comprises of a lower level input waveguide and an upper level output waveguide, connected by a waveguide on a slope, with vertical separation to isolate other crossing waveguides. Measured loss of 0.17 dB/slope was obtained for waveguide dimensions of 600 nm waveguide width (w) and 400 nm core thickness (h) at a wavelength of 1550 nm and for transverse electric (TE) mode polarization.

Experimental quantification of the free-carrier effect in silicon waveguides at extended wavelengths.

We examine the electro-optic effect at wavelengths ranging from 1.31 to 2.02 µm for: (1) an Electronic Variable Optical Attenuator (EVOA); and (2) a Micro-Ring Resonator (MRR). For the EVOA, simulations were performed to ascertain the relationship between free-carrier concentration and optical attenuation, and are in agreement with our observation of an increase in attenuation with increasing wavelength. MRRs were fabricated for use around wavelengths of 2 µm to explore the sensitivity of operation to bus-to-ring coupling gap and p-n junction offset. Trends observed in the experiment are replicated by simulation, calibrated using the observations of the EVOA operation. The previously proposed efficiency increase of operation around 2 µm compared to more traditional wavelengths is demonstrated. Future development of devices for these wavelengths, supported by amplification using Thulium Doped Fiber Amplifier (TDFA) technology, is a promising route to aid in the alleviation of increasing demands on communication networks.