ABSTRACT
Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties. Here we report on the synthesis of the transparent conducting oxides (TCOs) indium oxide and indium tin oxide (ITO) doped with neodymium, europium and terbium. The solid solubility in the systems was investigated and isothermal phase diagrams at 1400 °C were proposed. The solubility of the REEs in In2O3 is mainly determined by the size of the rare earth dopant, while in ITO the solid solubility was reduced due to a strong tendency of the tin and REE co-dopants to form a pyrochlore phase. The effect of the REE-doping on the conductivity of the host was determined and optical activity of the REE dopants were investigated in selected host materials. The conductivity of sintered materials of REE-doped In2O3 was significantly reduced, even at small doping concentrations, due to a decrease in carrier mobility. The same decrease in mobility was not observed in thin films of the material processed at lower temperatures. Strong emissions at around 611 nm were observed for Eu-doped In2O3, demonstrating the possibility of obtaining photoluminescence in a TCO host, while no emissions was observed for Nd- and Tb-doping.
ABSTRACT
The microscopic cause of conductivity in transparent conducting oxides like ZnO, In{2}O{3}, and SnO{2} is generally considered to be a point defect mechanism in the bulk, involving intrinsic lattice defects, extrinsic dopants, or unintentional impurities like hydrogen. We confirm here that the defect theory for O-vacancies can quantitatively account for the rather moderate conductivity and off-stoichiometry observed in bulk In{2}O{3} samples under high-temperature equilibrium conditions. However, nominally undoped thin-films of In{2}O{3} can exhibit surprisingly high conductivities exceeding by 4-5 orders of magnitude that of bulk samples under identical conditions (temperature and O{2} partial pressure). Employing surface calculations and thickness-dependent Hall measurements, we demonstrate that surface donors rather than bulk defects dominate the conductivity of In{2}O{3} thin films.
ABSTRACT
Substitution of calcium for strontium in LnSr2-xCaxCu2GaO7 (Ln = La, Pr, Nd, Gd, Ho, Er, Tm, and Yb) materials at ambient pressure and 975 degrees C results in complete substitution of calcium for strontium in the lanthanum and praseodymium systems and partial substitution in the other lanthanide systems. The calcium saturation level depends on the size of the Ln cation, and in all cases, a decrease in the lattice parameters with calcium concentration was observed until a common, lower bound, average A-cation size is reached. Site occupancies from X-ray and neutron diffraction experiments for LnSr2-xCaxCu2GaO7 (x = 0 and x = 2) confirm that the A-cations distribute between the two blocking-layer sites and the active-layer site based on size. A quantitative link between cation distribution and relative site-specific cation enthalpy for calcium, strontium, and lanthanum within the gallate structure is derived. The cation distribution in other similar materials can potentially be modeled.
ABSTRACT
Polymethylmethacrylate (PMMA) cranioplasty procedures were performed on 20 patients over a 2-year period. Nine of these patients had a total of 17 CT examinations, performed when clinically indicated. On 16 of the 17 CT scans, the appearance of the cranioplasty plate was characteristic of plates with gas bubbles. The appearance of these bubbles was stable over an extended period of time, ruling out clinical reasons for this appearance. The original interpretations of the CT scans were variable, inconclusive, or even erroneous. An understanding of the application of PMMA plates and their characteristics is necessary to accurately interpret the CT appearance of the PMMA cranioplasty plate.
