Search | VHL Regional Portal

1.

Electron-irradiation-induced defects in Si-Ge alloys.

Goubet JJ; Stievenard D; Mathiot D; Zazoui M.

Phys Rev B Condens Matter ; 46(16): 10113-10118, 1992 Oct 15.

Article in English | MEDLINE | ID: mdl-10002850

2.

Gold, self-, and dopant diffusion in silicon.

Mathiot D.

Phys Rev B Condens Matter ; 45(23): 13345-13355, 1992 Jun 15.

Article in English | MEDLINE | ID: mdl-10001417

3.

Rizk R; de Mierry P; Ballutaud D; Aucouturier M; Mathiot D.

Phys Rev B Condens Matter ; 44(12): 6141-6151, 1991 Sep 15.

Article in English | MEDLINE | ID: mdl-9998476

4.

Measurement of positron mobility in Si at 30-300 K.

Mäkinen J; Corbel C; Hautojärvi P; Mathiot D.

Phys Rev B Condens Matter ; 43(14): 12114-12117, 1991 May 15.

Article in English | MEDLINE | ID: mdl-9997004

5.

Positron mobility in Si at 300 K.

Mäkinen J; Corbel C; Hautojärvi P; Vehanen A; Mathiot D.

Phys Rev B Condens Matter ; 42(3): 1750-1758, 1990 Jul 15.

Article in English | MEDLINE | ID: mdl-9995607

6.

Modeling of hydrogen diffusion in n- and p-type silicon.

Mathiot D.

Phys Rev B Condens Matter ; 40(8): 5867-5870, 1989 Sep 15.

Article in English | MEDLINE | ID: mdl-9992643