Electrically and mechanically driven rotation of polar spirals in a relaxor ferroelectric polymer.

Topology created by quasi-continuous spatial variations of a local polarization direction represents an exotic state of matter, but field-driven manipulation has been hitherto limited to creation and destruction. Here we report that relatively small electric or mechanical fields can drive the non-volatile rotation of polar spirals in discretized microregions of the relaxor ferroelectric polymer poly(vinylidene fluoride-ran-trifluoroethylene). These polar spirals arise from the asymmetric Coulomb interaction between vertically aligned helical polymer chains, and can be rotated in-plane through various angles with robust retention. Given also that our manipulation of topological order can be detected via infrared absorption, our work suggests a new direction for the application of complex materials.

Giant and Reversible Inverse Barocaloric Effects near Room Temperature in Ferromagnetic MnCoGeB0.03.

Hydrostatic pressure represents an inexpensive and practical method of driving caloric effects in brittle magnetocaloric materials, which display first-order magnetostructural phase transitions whose large latent heats are traditionally accessed using applied magnetic fields. Here, moderate changes of hydrostatic pressure are used to drive giant and reversible inverse barocaloric effects near room temperature in the notoriously brittle magnetocaloric material MnCoGeB0.03 . The barocaloric effects compare favorably with those observed in barocaloric materials that are magnetic. The inevitable fragmentation provides a large surface for heat exchange with pressure-transmitting media, permitting good access to barocaloric effects in cooling devices.

Giant barocaloric effects over a wide temperature range in superionic conductor AgI.

Current interest in barocaloric effects has been stimulated by the discovery that these pressure-driven thermal changes can be giant near ferroic phase transitions in materials that display magnetic or electrical order. Here we demonstrate giant inverse barocaloric effects in the solid electrolyte AgI, near its superionic phase transition at ~420 K. Over a wide range of temperatures, hydrostatic pressure changes of 2.5 kbar yield large and reversible barocaloric effects, resulting in large values of refrigerant capacity. Moreover, the peak values of isothermal entropy change (60 J K-1 kg-1 or 0.34 J K-1 cm-3) and adiabatic temperature changes (18 K), which we identify for a starting temperature of 390 K, exceed all values previously recorded for barocaloric materials. Our work should therefore inspire the study of barocaloric effects in a wide range of solid electrolytes, as well as the parallel development of cooling devices.

Perpendicular local magnetization under voltage control in Ni films on ferroelectric BaTiO3 substrates.

High-resolution magnetoelectric imaging is used to demonstrate electrical control of the perpendicular local magnetization associated with 125 nm-wide magnetic stripe domains in 100-nm-thick Ni films. This magnetoelectric coupling is achieved in zero magnetic field using strain from ferroelectric BaTiO3 substrates to control perpendicular anisotropy imposed by the growth stress. These findings may be exploited for perpendicular recording in nanopatterned hybrid media.

The electrocaloric efficiency of ceramic and polymer films.

Efficiency is defined as η = |Q|/|W| in order to investigate the electrical work |W| associated with electrocaloric heat |Q|. This materials parameter indicates that polymer films are slightly more energy efficient than ceramic films, and therefore both species of material remain candidates for future cooling applications.

A ferroelectric memristor.

Memristors are continuously tunable resistors that emulate biological synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, although the details of the mechanism remain under debate. Purely electronic memristors based on well-established physical phenomena with albeit modest resistance changes have also emerged. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth, we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.

Spatially resolved photodetection in leaky ferroelectric BiFeO(3).

Potential gradients due to the spontaneous polarization of BiFeO(3) yield asymmetric and nonlinear photocarrier dynamics. Photocurrent direction is determined by local ferroelectric domain orientation, whereas magnitude is spectrally centered around charged domain walls that are associated with oxygen vacancy migration. Photodetection can be electrically controlled by manipulating ferroelectric domain configurations.

Atomic and electronic structure of the BaTiO3/Fe interface in multiferroic tunnel junctions.

Artificial multiferroic tunnel junctions combining a ferroelectric tunnel barrier of BaTiO(3) with magnetic electrodes display a tunnel magnetoresistance whose intensity can be controlled by the ferroelectric polarization of the barrier. This effect, called tunnel electromagnetoresistance (TEMR), and the corollary magnetoelectric coupling mechanisms at the BaTiO(3)/Fe interface were recently reported through macroscopic techniques. Here, we use advanced spectromicroscopy techniques by means of aberration-corrected scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS) to probe locally the nanoscale structural and electronic modifications at the ferroelectric/ferromagnetic interface. Atomically resolved real-space spectroscopic techniques reveal the presence of a single FeO layer between BaTiO(3) and Fe. Based on this accurate description of the studied interface, we propose an atomistic model of the ferroelectric/ferromagnetic interface further validated by comparing experimental and simulated STEM images with atomic resolution. Density functional theory calculations allow us to interpret the electronic and magnetic properties of these interfaces and to understand better their key role in the physics of multiferroics nanostructures.

Solid-state memories based on ferroelectric tunnel junctions.

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10(6) A cm(-2)). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10(4) A cm(-2) at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism.

Large electric field effect in electrolyte-gated manganites.

We have studied electrostatic field-induced doping in La0.8Ca0.2MnO3 transistors using electrolyte as a gate dielectric. For positive gate bias, electron doping drives a transition from a ferromagnetic metal to an insulating ground state. The thickness of the electrostatically doped layer depends on bias voltage but can extend to 5 nm requiring a field doping of 2x10;{15} charges per cm;{2} equivalent to 2.5 electrons per unit cell area. In contrast, negative gate voltages enhance the metallic conductivity by 30%.

Transformation of spin information into large electrical signals using carbon nanotubes.

Spin electronics (spintronics) exploits the magnetic nature of electrons, and this principle is commercially applied in, for example, the spin valves of disk-drive read heads. There is currently widespread interest in developing new types of spintronic devices based on industrially relevant semiconductors, in which a spin-polarized current flows through a lateral channel between a spin-polarized source and drain. However, the transformation of spin information into large electrical signals is limited by spin relaxation, so that the magnetoresistive signals are below 1% (ref. 2). Here we report large magnetoresistance effects (61% at 5 K), which correspond to large output signals (65 mV), in devices where the non-magnetic channel is a multiwall carbon nanotube that spans a 1.5 microm gap between epitaxial electrodes of the highly spin polarized manganite La(0.7)Sr(0.3)MnO3. This spintronic system combines a number of favourable properties that enable this performance; the long spin lifetime in nanotubes due to the small spin-orbit coupling of carbon; the high Fermi velocity in nanotubes that limits the carrier dwell time; the high spin polarization in the manganite electrodes, which remains high right up to the manganite-nanotube interface; and the resistance of the interfacial barrier for spin injection. We support these conclusions regarding the interface using density functional theory calculations. The success of our experiments with such chemically and geometrically different materials should inspire new avenues in materials selection for future spintronics applications.

Charge-ordered ferromagnetic phase in La(0.5)Ca(0.5)MnO3.

Mixed-valent manganites are noted for their unusual magnetic, electronic and structural phase transitions. For example, the La(1-x)Ca(x)MnO(3) phase diagram shows that below transition temperatures in the range 100-260 K, compounds with 0.2 < x < 0.5 are ferromagnetic and metallic, whereas those with 0.5 < x < 0.9 are antiferromagnetic and charge ordered. In a narrow region around x = 0.5, these totally dissimilar ground states are thought to coexist. It has been shown that charge order and charge disorder can coexist in the related compound, La(0.25)Pr(0.375)Ca(0.375)MnO(3). Here we present electron microscopy data for La(0.5)Ca(0.5)MnO(3) that shed light on the distribution of these coexisting phases, and uncover an additional, unexpected phase. Using electron holography and Fresnel imaging, we find micrometre-sized ferromagnetic regions spanning several grains coexisting with similar-sized regions with no local magnetization. Holography shows that the ferromagnetic regions have a local magnetization of 3.4 +/- 0.2 Bohr magnetons per Mn atom (the spin-aligned value is 3.5 micro (B) per Mn). We use electron diffraction and dark-field imaging to show that charge order exists in regions with no net magnetization and, surprisingly, can also occur in ferromagnetic regions.