ABSTRACT
Measurements of atmospheric gas concentrations using of NDIR gas sensors requires compensation of ambient pressure variations to achieve reliable result. The extensively used general correction method is based on collecting data for varying pressures for a single reference concentration. This one-dimensional compensation approach is valid for measurements carried out in gas concentrations close to reference concentration but will introduce significant errors for concentrations further away from the calibration point. For applications, requiring high accuracy, collecting, and storing calibration data at several reference concentrations can reduce the error. However, this method will cause higher demands on memory capacity and computational power, which is problematic for cost sensitive applications. We present here an advanced, but practical, algorithm for compensation of environmental pressure variations for relatively low-cost/high resolution NDIR systems. The algorithm consists of a two-dimensional compensation procedure, which widens the valid pressure and concentrations range but with a minimal need to store calibration data, compared to the general one-dimensional compensation method based on a single reference concentration. The implementation of the presented two-dimensional algorithm was verified at two independent concentrations. The results show a reduction in the compensation error from 5.1% and 7.3%, for the one-dimensional method, to -0.02% and 0.83% for the two-dimensional algorithm. In addition, the presented two-dimensional algorithm only requires calibration in four reference gases and the storing of four sets of polynomial coefficients used for calculations.
ABSTRACT
Designing heterostructure materials at the nanoscale is a well-known method to enhance gas sensing performance. In this study, a mixed solution of zinc chloride and tin (II) chloride dihydrate, dissolved in ethanol solvent, was used as the initial precursor for depositing the sensing layer on alumina substrates using the ultrasonic spray pyrolysis (USP) method. Several ZnO/SnO2 heterostructures were grown by applying different ratios in the initial precursors. These heterostructures were used as active materials for the sensing of H2S gas molecules. The results revealed that an increase in the zinc chloride in the USP precursor alters the H2S sensitivity of the sensor. The optimal working temperature was found to be 450 °C. The sensor, containing 5:1 (ZnCl2: SnCl2·2H2O) ratio in the USP precursor, demonstrates a higher response than the pure SnO2 (â¼95 times) sample and other heterostructures. Later, the selectivity of the ZnO/SnO2 heterostructures toward 5 ppm NO2, 200 ppm methanol, and 100 ppm of CH4, acetone, and ethanol was also examined. The gas sensing mechanism of the ZnO/SnO2 was analyzed and the remarkably enhanced gas-sensing performance was mainly attributed to the heterostructure formation between ZnO and SnO2. The synthesized materials were also analyzed by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and X-ray photoelectron spectra to investigate the material distribution, grain size, and material quality of ZnO/SnO2 heterostructures.
ABSTRACT
The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.
ABSTRACT
In this paper, a micrometre thin film of molybdenum disulfide (MoS2) is characterized for thermoelectric properties. The sample was prepared through mechanical exfoliation of a molybdenite crystal. The Seebeck coefficient measurement was performed by generating a temperature gradient across the sample and recording the induced electrical voltage, and for this purpose a simple measurement setup was developed. In the measurement, platinum was utilized as reference material in the electrodes. The Seebeck value of MoS2 was estimated to be approximately -600 µV/K at a temperature difference of 40 °C. The negative sign indicates that the polarity of the material is n-type. For measurement of the thermal conductivity, the sample was sandwiched between the heat source and the heat sink, and a steady-state power of 1.42 W was provided while monitoring the temperature difference across the sample. Based on Fourier's law of conduction, the thermal conductivity of the sample was estimated to be approximately 0.26 Wm-1 K-. The electrical resistivity was estimated to be 29 Ω cm. The figure of merit of MoS2 was estimated to be 1.99 × 10-4.
