Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes.

Fabry-Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780-1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The laser structures were grown using the molecular beam epitaxy (MBE) technique on the n-type GaAs(100) substrate. The photolithography process was performed to fabricate edge-emitting laser bars of 5 µm by 500 µm in size. The temperature-dependent power-current measurements showed that the characteristic threshold current of the fabricated LDs was in the 60-120 mA range. Light and current characteristics were almost linear up to (1.2-2.0) Ith. Low-frequency 10 Hz-20 kHz electrical and optical noise characteristics were measured in the temperature range from 70 K to 290 K and showed that the low-frequency optical and electrical noise spectra are comprised of 1/f and Lorentzian-type components. The positive cross-correlation between optical and electrical fluctuations was observed.

Electrical Resistivity and Microwave Properties of Carbon Fiber Felt Composites.

We present studies on the microwave properties, electrical resistivity, and low-frequency (10 Hz-20 kHz) noise characteristics in the temperature range of 78 K to 380 K of composite materials made from bisphenol A-based epoxy resin and carbon fiber felts. Two types of carbon fibers were used, derived from polyacrylonitrile or regenerated cellulose. We show that these structures are suitable for electromagnetic shielding applications, especially in the direction parallel to the carbon fibers. The low-frequency voltage fluctuations observed in these materials are of the 1/fα, and the noise intensity is proportional to the square of the voltage. The characteristics of the investigated materials show an instability in the temperature range from 307 K to 332 K. This effect is followed by an increase in resistivity and noise intensity, but it does not change the character of the noise, and this instability vanishes after a few repeated heating and cooling cycles.

Noise and Electrical Characteristics of Composites Filled with Onion-like Carbon Nanoparticles.

Polymer matrix composites filled with carbon nanoparticles are promising materials for many applications, but their properties strongly depend on the particle features, concentration and distribution within the matrix. Here we present a study of the electrical resistivity and the low-frequency voltage fluctuation of composites based on epoxy resin filled with onion-like carbon (OLC) of different sizes (40-250 nm) above the percolation threshold, which should clarify the electrical transport characteristics in these materials. Electrical measurements were performed in the temperature range of 78 to 380 K, and voltage noise analysis was carried out from 10 Hz to 20 kHz. At low temperatures (below 250 K), thermally activated tunneling, variable-range hopping and generation-recombination of charge carriers take place. Above 250 K, the rapid expansion of the matrix with the temperature increases the resistivity, but above ~330 K, the conductivity of the matrix becomes significant. Quasi one-dimensional electrical transport is observed in composites with the smallest particles (40 nm), while in composites with the largest particles (220-250 nm), the dimensionality of the electrical transport is higher. The temperature dependence of the electrical conductivity of composites with smaller particles is more sensitive to matrix expansion.

Review of Low-Frequency Noise Properties of High-Power White LEDs during Long-Term Aging.

Low-frequency noise investigation is a highly sensitive and very informative method for characterization of white nitride-based light-emitting diodes (LEDs) as well as for the evaluation of their degradation. We present a review of quality and reliability investigations of high-power (1 W and 3 W) white light-emitting diodes during long-term aging at the maximum permissible forward current at room temperature. The research was centered on the investigation of blue InGaN and AlInGaN quantum wells (QWs) LEDs covered by a YAG:Ce3+ phosphor layer for white light emission. The current-voltage, light output power, and low-frequency noise characteristics were measured. A broadband silicon photodetector and two-color (blue and red) selective silicon photodetectors were used for the LED output power detection, which makes it possible to separate physical processes related to the initial blue light radiation and the phosphor luminescence. Particular attention was paid to the measurement and interpretation of the simultaneous cross-correlation coefficient between electrical and optical fluctuations. The presented method enables to determine which part of fluctuations originates in the quantum well layer of the LED. The technique using the two-color selective photodetector enables investigation of changes in the noise properties of the main blue light source and the phosphor layer during the long-term aging.

Low-Frequency Noise Investigation of 1.09 µm GaAsBi Laser Diodes.

GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should be clarified. A detailed study of near-infrared 1.09 µm wavelength GaAsBi type-I laser diodes using the low-frequency noise spectroscopy in a temperature range of (180⁻300) K is presented. Different types of voltage fluctuation spectral density dependencies on the forward current far below the lasing threshold have been observed. According to this, investigated samples have been classified into two groups and two equivalent noise circuits with the corresponding voltage noise sources are presented. Calculations on the voltage spectral density of the electrical noise and current-voltage characteristic approximations have been performed and the results are consistent with the experimental data. The analysis showed that one group of LDs is characterized by 1/fα-type electrical fluctuations with one steep electrical bump in the electrical noise dependence on forward current, and the origin of these fluctuations is the surface leakage channel. The LDs of the other group have two bumps in the electrical noise dependence on current where the first bump is determined by overall LD defectiveness and the second bump by Bi-related defects in the active area of LD with characteristic Lorentzian-type fluctuations having the activation energy of (0.16⁻0.18) eV.

InGaAs Diodes for Terahertz Sensing-Effect of Molecular Beam Epitaxy Growth Conditions.

InGaAs-based bow-tie diodes for the terahertz (THz) range are found to be well suited for development of compact THz imaging systems. To further optimize design for sensitive and broadband THz detection, one of the major challenges remains: to understand the noise origin, influence of growth conditions and role of defects for device operation. We present a detailed study of photoreflectance, low-frequency noise characteristics and THz sensitivity of InGaAs bow-tie diodes. The diodes are fabricated from InGaAs wafers grown by molecular beam epitaxy (MBE) on semi-insulating InP substrate under different technological conditions. Photoreflectance spectra indicated the presence of strong built-in electric fields reaching up to 49 kV/cm. It was demonstrated that the spectral density of voltage fluctuations at room temperature was found to be proportional to 1/f, while at lower temperatures, 77⁻200 K, Lorentzian-type spectra dominate due to random telegraph signals caused by individual capture defects. Furthermore, varying bias voltage, we considered optimal conditions for device room temperature operation in the THz range with respect to signal-to-noise ratio. The THz detectors grown with beam equivalent pressure In/Ga ratio equal to 2.04 exhibit the minimal level of the low-frequency noise, while InGaAs layers grown with beam equivalent pressure In/Ga ratio equal to 2.06 are found to be well suited for fabrication of room temperature bow-tie THz detectors enabling sensitivity of 13 V/W and noise equivalent power (NEP) of 200 pW/√Hz at 0.6 THz due to strong built-in electric field effects.

Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene.

We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz(0.5). Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies. This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.