ABSTRACT
This study focuses on the impact of negative fixed charge, achieved through fluorine (F) implantation, on breakdown voltage (BV) enhancement in vertical GaN Schottky diodes. Several device and implant-related parameters are examined using Synopsys Sentaurus TCAD simulations in order to determine the optimum fixed negative charge concentration required to achieve the highest BV. The simulated structure consisted of a Schottky diode with a box consisting of negative fixed charges to achieve the edge termination of the Schottky device. An empirical equation is proposed to determine the optimum fixed charge concentration for the highest BV based on depth. The simulation also considered implantation profiles derived from SIMS data from an actual device implanted with multi-energy and multi-dose F. It is demonstrated that the BV has a similar dependence on the key parameters like in the box profile. In summary, this work provides valuable insights into optimizing edge termination techniques using negative fixed charge for improved BV in vertical GaN power devices.
