Spectral Asymmetry Induces a Re-Entrant Quantum Hall Effect in a Topological Insulator.

The band inversion of topological materials in three spatial dimensions is intimately connected to the parity anomaly of 2D massless Dirac fermions, known from quantum field theory. At finite magnetic fields, the parity anomaly reveals itself as a non-zero spectral asymmetry, i.e., an imbalance between the number of conduction and valence band Landau levels, due to the unpaired zero Landau level. This work reports the realization of this 2D Dirac physics at a single surface of the 3D topological insulator (Hg,Mn)Te. An unconventional re-entrant sequence of quantized Hall plateaus in the measured Hall resistance can be directly related to the occurrence of spectral asymmetry in a single topological surface state. The effect should be observable in any topological insulator where the transport is dominated by a single Dirac surface state.

Counterpropagating topological and quantum Hall edge channels.

The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transport gap in disordered two dimensional topological insulators in perpendicular magnetic fields of up to 16 T. Instead, we observe that a topological edge channel (from band inversion) coexists with a counterpropagating quantum Hall edge channel for magnetic fields at which the transition to the insulating regime is expected. For larger fields, we observe only the quantum Hall edge channel with transverse resistance close to h/e2. By tuning the disorder using different fabrication processes, we find evidence that this unexpected ν = 1 plateau originates from extended quantum Hall edge channels along a continuous network of charge puddles at the edges of the device.

Universality and Stability of the Edge States of Chiral-Symmetric Topological Semimetals and Surface States of the Luttinger Semimetal.

We theoretically demonstrate that the chiral structure of the nodes of nodal semimetals is responsible for the existence and universal local properties of the edge states in the vicinity of the nodes. We perform a general analysis of the edge states for an isolated node of a 2D semimetal, protected by chiral symmetry and characterized by the topological winding number N. We derive the asymptotic chiral-symmetric boundary conditions and find that there are N+1 universal classes of them. The class determines the numbers of flatband edge states on either side off the node in the 1D spectrum and the winding number N gives the total number of edge states. We then show that the edge states of chiral nodal semimetals are robust: they persist in a finite-size stability region of parameters of chiral-asymmetric terms. This significantly extends the notion of 2D and 3D topological nodal semimetals. We demonstrate that the Luttinger model with a quadratic node for j=3/2 electrons is a 3D topological semimetal in this new sense and predict that α-Sn, HgTe, possibly Pr_{2}Ir_{2}O_{7}, and many other semimetals described by it are topological and exhibit surface states.