ABSTRACT
Many natural structures have fractal geometries that exhibit useful functional properties. These properties, which exploit the recurrence of patterns at increasingly small scales, are often desirable in applications and, consequently, fractal geometry is increasingly employed in diverse technologies ranging from radio antennae to storm barriers. In this paper, we explore the application of fractal geometry to electrical devices. First, we lay the foundations for the implementation of fractal devices by considering diffusion-limited aggregation (DLA) of atomic clusters. Under appropriate growth conditions, atomic clusters of various elements form fractal patterns driven by DLA. We perform a fractal analysis of both simulated and physical devices to determine their spatial scaling properties and demonstrate their potential as fractal circuit elements. Finally, we simulate conduction through idealized and DLA fractal devices and show that their fractal scaling properties generate novel, nonlinear conduction properties in response to depletion by electrostatic gates.
