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1.
Scanning Tunneling Microscopy Study of InP(100)-(2 x 4): An Exception to the Dimer Model.
MacPherson CD; Wolkow RA; Mitchell CE; McLean AB.
Phys Rev Lett ; 77(4): 691-694, 1996 Jul 22.
Article in English | MEDLINE | ID: mdl-10062878
2.
InAs(110)-p(1 x 1)-Sb(1 ML): Electronic structure and surface bonding.
McLean AB; Swanston DM; McIlroy DN; Heskett D; Ludeke R; Munekata H.
Phys Rev B Condens Matter ; 51(20): 14271-14277, 1995 May 15.
Article in English | MEDLINE | ID: mdl-9978355
3.
Electronic band structure of the two-dimensional surface-state bands of the (1 x 1) and (1 x 2) phases of Bi/GaSb(110).
McIlroy DN; Heskett D; McLean AB; Ludeke R; Munekata H; DiNardo NJ.
Phys Rev B Condens Matter ; 48(16): 11897-11904, 1993 Oct 15.
Article in English | MEDLINE | ID: mdl-10007531
4.
Occupied surface-state bands of Bi(1 x 1) overlayers on an InAs(110) surface grown by molecular-beam epitaxy.
McIlroy DN; Heskett D; Swanston DM; McLean AB; Ludeke R; Munekata H; Prietsch M; DiNardo NJ.
Phys Rev B Condens Matter ; 47(7): 3751-3759, 1993 Feb 15.
Article in English | MEDLINE | ID: mdl-10006478
5.
Fine structure of the Ca 2p x-ray-absorption edge for bulk compounds, surfaces, and interfaces.
Himpsel FJ; Karlsson UO; McLean AB; Terminello LJ; de Groot FM; Abbate M; Fuggle JC; Yarmoff JA; Thole BT; Sawatzky GA.
Phys Rev B Condens Matter ; 43(9): 6899-6907, 1991 Mar 15.
Article in English | MEDLINE | ID: mdl-9998152
6.
Two-dimensional electronic structure of the GaAs(110)-Bi system.
McLean AB; Ludeke R; Prietsch M; Heskett D; Tang D; Wong TM.
Phys Rev B Condens Matter ; 43(9): 7243-7253, 1991 Mar 15.
Article in English | MEDLINE | ID: mdl-9998188
7.
Electronic properties of nascent GaP(110)-noble-metal interfaces.
Ludeke R; McLean AB; Taleb-Ibrahimi A.
Phys Rev B Condens Matter ; 42(5): 2982-2995, 1990 Aug 15.
Article in English | MEDLINE | ID: mdl-9995790
8.
Comment on "Schottky-barrier formation at low metal coverages: A consistent molecular-orbital calculation for K on GaAs(110)"
McLean AB; Heskett D; Tang D; DiNardo NJ.
Phys Rev Lett ; 65(4): 524, 1990 Jul 23.
Article in English | MEDLINE | ID: mdl-10042942
9.
Electronic structure of Si(111)-B( sqrt 3 x sqrt 3 )R30 degrees studied by Si 2p and B 1s core-level photoelectron spectroscopy.
McLean AB; Terminello LJ; Himpsel FJ.
Phys Rev B Condens Matter ; 41(11): 7694-7700, 1990 Apr 15.
Article in English | MEDLINE | ID: mdl-9993065
10.
Core-level photoemission investigation of atomic-fluorine adsorption on GaAs(110).
McLean AB; Terminello LJ; McFeely FR.
Phys Rev B Condens Matter ; 40(17): 11778-11785, 1989 Dec 15.
Article in English | MEDLINE | ID: mdl-9991783
11.
Resonant inverse-photoemission study of layer-dependent surface states at the epitaxial GaAs(110)-Bi interface.
McLean AB; Himpsel FJ.
Phys Rev B Condens Matter ; 40(12): 8425-8430, 1989 Oct 15.
Article in English | MEDLINE | ID: mdl-9991305
12.
Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1 x 1)Bi.
McLean AB; Feenstra RM; Taleb-Ibrahimi A; Ludeke R.
Phys Rev B Condens Matter ; 39(17): 12925-12928, 1989 Jun 15.
Article in English | MEDLINE | ID: mdl-9948173
13.
Surface core-level binding-energy shifts for the cleaved GaP(110) surface.
McLean AB; Ludeke R.
Phys Rev B Condens Matter ; 39(9): 6223-6226, 1989 Mar 15.
Article in English | MEDLINE | ID: mdl-9949053
14.
Band dispersion of an interface state: CaF2/Si(111).
McLean AB; Himpsel FJ.
Phys Rev B Condens Matter ; 39(2): 1457-1460, 1989 Jan 15.
Article in English | MEDLINE | ID: mdl-9948354
15.
Orientation of the O 2p holes in Bi2Sr2Ca1Cu2O8.
Himpsel FJ; Chandrashekhar GV; McLean AB; Shafer MW.
Phys Rev B Condens Matter ; 38(16): 11946-11948, 1988 Dec 01.
Article in English | MEDLINE | ID: mdl-9946110
16.
Dependence of core-level photoemission spectra on overlayer growth mode: Al on InP(110).
McLean AB; McGovern IT; Stephens C; Wilke WG; Haak H; Horn K; Braun W.
Phys Rev B Condens Matter ; 38(9): 6330-6333, 1988 Sep 15.
Article in English | MEDLINE | ID: mdl-9947107
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