Finite-element modeling of neuromodulation via controlled delivery of potassium ions using conductive polymer-coated microelectrodes.

Objective. The controlled delivery of potassium is an interesting neuromodulation modality, being potassium ions involved in shaping neuron excitability, synaptic transmission, network synchronization, and playing a key role in pathological conditions like epilepsy and spreading depression. Despite many successful examples of pre-clinical devices able to influence the extracellular potassium concentration, computational frameworks capturing the corresponding impact on neuronal activity are still missing.Approach. We present a finite-element model describing a PEDOT:PSS-coated microelectrode (herein, simplyionic actuator) able to release potassium and thus modulate the activity of a cortical neuron in anin-vitro-like setting. The dynamics of ions in the ionic actuator, the neural membrane, and the cellular fluids are solved self-consistently.Main results. We showcase the capability of the model to describe on a physical basis the modulation of the intrinsic excitability of the cell and of the synaptic transmission following the electro-ionic stimulation produced by the actuator. We consider three case studies for the ionic actuator with different levels of selectivity to potassium: ideal selectivity, no selectivity, and selectivity achieved by embedding ionophores in the polymer.Significance. This work is the first step toward a comprehensive computational framework aimed to investigate novel neuromodulation devices targeting specific ionic species, as well as to optimize their design and performance, in terms of the induced modulation of neural activity.

Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications.

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power integrated sensors, very little is known about their noise characterization when being operated in a liquid gate configuration. The noise characteristics in various regimes of their operation are important to select the most suitable conditions for signal-to-noise ratio (SNR) and power consumption. This work reports systematic DC, transient, and noise characterizations and models of a back-end of line (BEOL)-modified foundry-made ISFET used as pH sensor. The aim is to determine the sensor sensitivity and resolution to pH changes and to calibrate numerical and lumped element models, capable of supporting the interpretation of the experimental findings. The experimental sensitivity is approximately 40 mV/pH with a normalized resolution of 5 mpH per µm2, in agreement with the literature state of the art. Differences in the drain current noise spectra between the ISFET and MOSFET configurations of the same device at low currents (weak inversion) suggest that the chemical noise produced by the random binding/unbinding of the H+ ions on the sensor surface is likely the dominant noise contribution in this regime. In contrast, at high currents (strong inversion), the two configurations provide similar drain noise levels suggesting that the noise originates in the underlying FET rather than in the sensing region.